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http://dx.doi.org/10.5573/IEIESPC.2015.4.5.318

Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation  

Kim, Youngmin (Department of Electronic Engineering, Inha University)
Petykiewicz, Jan (Department of Electrical Engineering, Stanford University)
Gupta, Shashank (Department of Electrical Engineering, Stanford University)
Vuckovic, Jelena (Department of Electrical Engineering, Stanford University)
Saraswat, Krishna C. (Department of Electrical Engineering, Stanford University)
Nam, Donguk (Department of Electronic Engineering, Inha University)
Publication Information
IEIE Transactions on Smart Processing and Computing / v.4, no.5, 2015 , pp. 318-323 More about this Journal
Abstract
We present a new way to create a thermally stable, highly strained germanium (Ge) optical resonator using a novel Ge-on-dual-insulators substrate. Instead of using a conventional way to undercut the oxide layer of a Ge-on-single-insulator substrate for inducing tensile strain in germanium, we use thin aluminum oxide as a sacrificial layer. By eliminating the air gap underneath the active germanium layer, we achieve an optically insulating, thermally conductive, and highly strained Ge resonator structure that is critical for a practical germanium laser. Using Raman spectroscopy and photoluminescence experiments, we prove that the novel geometry of our Ge resonator structure provides a significant improvement in thermal stability while maintaining good optical confinement.
Keywords
Strain; Germanium; Light emitter; Optical interconnects; Thermal conduction;
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