Strained Ge Light Emitter with Ge on Dual Insulators for Improved Thermal Conduction and Optical Insulation |
Kim, Youngmin
(Department of Electronic Engineering, Inha University)
Petykiewicz, Jan (Department of Electrical Engineering, Stanford University) Gupta, Shashank (Department of Electrical Engineering, Stanford University) Vuckovic, Jelena (Department of Electrical Engineering, Stanford University) Saraswat, Krishna C. (Department of Electrical Engineering, Stanford University) Nam, Donguk (Department of Electronic Engineering, Inha University) |
1 | Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H.-C. Luan, L.C. Kimerling, Strain-induced band gap shrinkage in Ge grown on Si substrate, Appl. Phys. Lett, vol. 82, no. 2044, 2003. |
2 | X. Sun, J. Liu, L.C. Kimerling, J. Michel, Toward a Germanium Laser for Integrated Silicon Photonics, IEEE J. Sel. Top. Quantum Electron, vol. 16, pp. 124-131, 2010. DOI ScienceOn |
3 | T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, et al., Strain-enhanced photoluminescence from Ge direct transition, Appl. Phys. Lett, vol. 96, no. 211108, 2010. |
4 | M. El Kurdi, H. Bertin, E. Martincic, M. De Kersauson, G. Fishman, S. Sauvage, et al., Control of direct band gap emission of bulk germanium by mechanical tensile strain, Appl. Phys. Lett, vol. 96, no. 041909, 2010. |
5 | M. El Kurdi, G. Fishman, S. Sauvage, P. Boucaud, Band structure and optical gain of tensile-strained germanium based on a 30 band kp formalism, J. Appl. Phys, vol. 107, no. 013710, 2010. |
6 | D. Nam, D. S. Sukhdeo, S. Gupta, J. Kang, M.L. Brongersma, K.C. Saraswat, Study of carrier statistics in uniaxially strained Ge for a lowthreshold Ge laser, IEEE J. Sel. Top. Quantum Electron, vol. 20, no. 1500107, 2014. |
7 | C.G. Van der Walle, Band lineups and deformation potentials in the model-solid theory, Phys. Rev. B Condens. Matter. vol. 39, no. 1871, 1989. |
8 | M. V. Fischetti, S. E. Laux, Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys, J. Appl. Phys, vol. 80, no. 2234, 1996. |
9 | D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, et al., Strained germanium thin film membrane on silicon substrate for optoelectronics, Opt. Express, vol. 19, pp. 25866-25872, 2011. DOI |
10 | J. R. Sanchez-Perez, C. Boztug, F. Chen, F. F. Sudradjat, D.M. Paskiewicz, R.B. Jacobson, et al., Direct-bandgap light-emitting germanium in tensilely strained nanomembranes, Proc. Natl. Acad. Sci. U. S. A, vol. 108, pp. 18893-18898, 2011. DOI |
11 | A. Ghrib, M. de Kersauson, M. El Kurdi, R. Jakomin, G. Beaudoin, S. Sauvage, et al., Control of tensile strain in germanium waveguides through silicon nitride layers, Appl. Phys. Lett, vol. 100, no. 201104, 2012. |
12 | O, M. Lisker, M. Virgilio, et al., Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process, Opt. Express, vol. 22, pp. 399-410, 2014. DOI |
13 | G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, C. Wenger, G. Niu, et al., Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach, J. Appl. Phys, vol. 113, no. 013513, 2013. |
14 | A. Ghrib, M. El Kurdi, M. Prost, S. Sauvage, X. Checoury, G. Beaudoin, et al., All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities, Adv. Opt. Mater, vol. 3, pp. 353-358, 2015. DOI |
15 | D. Nam, D. Sukhdeo, S.-L. Cheng, A. Roy, K. Chih-Yao Huang, M. Brongersma, et al., Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser, Appl. Phys. Lett, vol. 100, no. 131112, 2012. |
16 | R. A. Minamisawa, M. J. Suess, R. Spolenak, J. Faist, C. David, J. Gobrecht, et al., Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%, N3at. Commun, vol. 3, no. 1096, 2012. |
17 | M. J. Suess, R. Geiger, R.A. Minamisawa, G. Schiefler, J. Frigerio, D. Chrastina, et al., Analysis of enhanced light emission from highly strained germanium microbridges, Nat. Photonics, vol. 7, pp. 466-472, 2013. DOI |
18 | A. Nayfeh, C. O. Chui, K. C. Saraswat, T. Yonehara, Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality, Appl. Phys. Lett, vol. 85, no. 2815, 2004. |
19 | D. Nam, D. S. Sukhdeo, J.-H. Kang, J. Petykiewicz, J.H. Lee, W.S. Jung, et al., Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles, Nano Lett, vol. 13, pp. 3118-3123, 2013. DOI ScienceOn |
20 | D. S. Sukhdeo, D. Nam, J.-H. Kang, M. L. Brongersma, K. C. Saraswat, Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain, Photonics Res, vol. 2, pp. A8-A13, 2014. DOI |
21 | J. Petykiewicz, D. Nam, D. S. Sukhdeo, S. Gupta, S. Buckley, A. Y. Piggott, et al., Direct Bandgap Light Emission from Strained Ge Nanowires Coupled with High-Q Optical Cavities, Arxiv, 1508.01255, 2015. |
22 | A. Lugstein, M. Mijic, T. Burchhart, C. Zeiner, R. Langegger, M. Schneider, et al., In situ monitoring of Joule heating effects in germanium nanowires by -Raman spectroscopy, Nanotechnology, vol. 24, no. 065701, 2013. |
23 | H.H. Li, Refractive index of Silicon and Germanium and its Wavelentgth and Temperature Derivatives, J. Phys. Chem. Ref. Data, vol. 9, pp. 561-658, 1980. DOI |
24 | P. Chaisakul, D. Marris-Morini, M.-S. Rouifed, G. Isella, D. Chrastina, J. Frigerio, et al., 23 GHz Ge/SiGe multiple quantum well electro-absorption modulator., Opt. Express, vol. 20, pp. 3219-3224, 2012. DOI |
25 | K.-H. Koo, H. Cho, P. Kapur, K. C. Saraswat, Performance comparisons between carbon banotubes, optical, and Cu for future high-performance on-chip interconnect applications, IEEE Trans. Electron Devices, vol. 54, pp. 3206-3215, 2007. DOI ScienceOn |
26 | D. A. B. Miller, Rationale and challenges for optical interconnects to electronic chips, Proc. IEEE, vol. 88, pp. 728-749, 2000. DOI ScienceOn |
27 | D. Miller, Device Requirements for Optical Interconnects to Silicon Chips, IEEE, vol. 97, pp. 1166-1185, 2009. DOI ScienceOn |
28 | S. Klinger, M. Berroth, M. Kaschel, M. Oehme, E. Kasper, Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz, IEEE Photonics Technol. Lett, vol. 21, pp. 920-922, 2009. DOI ScienceOn |
29 | P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M.-S. Rouifed, S. Cecchi, et al., Integrated germanium optical interconnects on silicon substrates, Nat Phot, vol. 8, pp. 482-488, 2014. DOI ScienceOn |
30 | L. Vivien, A. Polzer, D. Marris-Morini, J. Osmond, J.M. Hartmann, P. Crozat, et al., Zero-bias 40Gbit/s germanium waveguide photodetector on silicon., Opt. Express, vol. 20, pp. 1096-1101, 2012. DOI |
31 | H.-Y. Y1u, S. Ren, W.S. Jung, A.K. Okyay, D. a. B. Miller, K. C. Saraswat, High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration, IEEE Electron Device Lett, vol. 30, pp. 1161-1163, 2009. DOI ScienceOn |
32 | D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L.C. Kimerling, et al., High performance, waveguide integrated Ge photodetectors., Opt. Express, vol. 15, pp. 3916-3921, 2007. DOI |
33 | B. Dutt, D.S. Sukhdeo, D. Nam, B. M. Vulovic, K. C. Saraswat, Roadmap to an efficient germaniumon-silicon laser: strain vs. n-type doping, IEEE Photo-nics J, vol. 4, pp. 2002-2009, 2012. DOI ScienceOn |
34 | D. Nam, D.S. Sukhdeo, B.R. Dutt, K.C. Saraswat, (Invited) Light Emission from Highly-Strained Germanium for on-Chip Optical Interconnects, ECS Trans, vol. 64, pp. 371-381, 2014. |
35 | D. Nam, J.-H. Kang, M. L. Brongersma, K. C. Saraswat, Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using timeresolved photoluminescence, Opt. Lett, vol. 39, pp. 6205-6208, 2014. DOI |
36 | J. Liu, X. Sun, R. Camacho-Aguilera, L. C. Kimerling, J. Michel, Ge-on-Si laser operating at room temperature., Opt. Lett, vol. 35, pp. 679-681, 2010. DOI ScienceOn |