• Korean Chemical Engineering Research
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• v.50 no.1
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• pp.72-75
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• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.324-327
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• 2020

The impact of output conductance (g_o) on the short-circuit current-gain cut-off frequency (f_T) in In_0.8Ga_0.2As high-electron-mobility transistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of f_T in a simplified small-signal model (SSM) of the HEMTs, derive an analytical formula for f_T in terms of the extrinsic model parameters of the simplified SSM, which are related to the intrinsic model parameters of a general SSM, and verify its validity for devices with L_g from 260 to 25 nm. In long-channel devices, the effect of the intrinsic output conductance (g_oi) on f_T was negligible. This was because, from the simplified SSM perspective, three model parameters, such as g_{m_ext}, C_{gs_ext} and C_{gd_ext}, were weakly dependent on g_oi. However, in short-channel devices, g_oi was found to play a significant role in degrading f_T as L_g was scaled down. The increase in g_oi in short-channel devices caused a considerable reduction in g_{m_ext} and an overall increase in the total extrinsic gate capacitance, yielding a decrease in f_T with g_oi. Finally, the results were used to infer how f_T is influenced by g_oi in HEMTs, emphasizing that improving electrostatic integrity is also critical importance to benefit fully from scaling down L_g.

• Journal of Sensor Science and Technology
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• v.27 no.6
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• pp.386-391
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• 2018

To analyze the film cooling in a liquid rocket engine, it is necessary to understand the characteristics of the wall-impingement liquid film. We designed an optimal two-dimensional device for measuring the thickness of the liquid film thickness. This device quantitatively measures the liquid-film thickness distribution. In previous liquid-film thickness measuring devices, the liquid film was formed over the entire area of the sensor. However, its formation depended on injection conditions. To compensate for this, optimal resistors are selected. Additionally, saturation variations with partial saturation are analyzed. Furthermore, calibration using the enhanced plate method is conducted with improvements in spatial resolution. The device designed here can be used to analyze the properties of an impingement liquid film with a slit injector. This study can be used for film-cooling analysis in liquid rocket engines.

• Journal of the Korean Ceramic Society
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• v.55 no.1
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• pp.1-20
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• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.229.2-229.2
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• 2014

Graphene, an allotrope of carbon, is a two-dimensional material having a unique electro-mechanical property that shows significant change of the electrical conductance under the applied strain. In addition of the extraordinary mechanical strength [1], graphene becomes a prospective candidate for pressure sensor technology [2]. However, very few investigations have been carried out to demonstrate characteristics of graphene sensor as a device form. In this study, we demonstrate a pressure sensor using graphene double layer as an active channel to generate electrical signal as the response of the applied vertical pressure. For formation of the active channel in the pressure sensor, two single graphene layers which are grown on Cu foil (25 um thickness) by the plasma enhanced chemical vapor deposition (PECVD) are sequentially transformed to the poly-di-methyl-siloxane (PDMS) substrate. Dry and wet transfer methods are individually employed for formation of the double layer graphene. This sensor geometry results a switching characteristic which shows ~900% conductivity change in response to the application of pulsed pressure of 5 kPa whose on and off duration is 3 sec. Additionally, the functional reliability of the sensor confirms consistent behavior with a 200-cycle test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.404-405
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• 2008

In this work, we investigated the effect of the functionalized SWNT-polymer composites for increasing sensitivity and imparting selectivity to nanotube sensors. To do this, CNT -based gas sensors were fabricated with two types of dispersed SWNT solution involving different polymer resin of TEOS (Tetraethyl orthosilicate) or MTMS (Methyl trimethoxysilane) which is blended to adhere to substrate well. As the surfaces of TEOS and MTMS surrounding SWNTs remain functionalized to -OH and $-CH_3$ groups respectively after hardening, gas adsorption will be affected differently according to the type of gases. In the experiment, we examined the response of electrical conductance for alcohol vapour gas. As the result, the conductance in the sensors using TEOS decreased considerably while that of MTMS was nearly invariable.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.313-318
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• 2007

Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.127-133
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• 2006

Recent studies demonstrated the ability of carbon nanotube (CNT) to promote electron transfer reactions of important compounds and to impart higher stability onto electrochemical sensors. CNT-based sensors measured by hydroxyl radical concentration or pH value suggest great promise for biosensors. This paper describes a new method for fabricating a very simple and inexpensive pH sensor compose of single walled-carbon nanotubes (SW-CNTs) using an ultra-precision spray. CNT-based sensor shows pH sensitivity in buffer solution at different pH range. Our experimental results show the sensor responses to pH buffer solution and the conductance of depends on the pH values. These results support application possibility of SW-CNTs based pH sensor for mass production.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.228.2-228.2
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• 2014

Characteristics of high Fermi velocity, high mechanical strength, and transparency offer tremendous advantages for using graphene as a promising transparent conducting material [1] in electronic devices. Although graphene is a prospective candidate for touch sensor with strong mechanical properties [2] and flexibility, only few investigations have been carried out in the field of sensor as a device form. In this study, we suggest ultra-highly sensitive and transparent graphene touch sensor fabricated by single layer graphenes. One of the graphene layers is formed in the top panel as a disconnected graphene beam transferred on PDMS, and the other of the graphene layer is formed with line-patterning on the bottom panel of triple structure PET/PI/SiO2. The touch sensor shows characteristics of flexible. Its transmittance is approximately 75% where transmittance of the top panel and the bottom panel are 86.3% and 87%, respectively, at 550 nm wavelength. Sheet resistance of each graphene layer is estimated as low as $971{\Omega}/sq$. The results show that the conductance change rate (${\Delta}C/C0$) is $8{\times}105$ which depicts ultra-high sensitivity. Moreover, reliability characteristic confirms consistent behavior up to a 100-cycle test.