• Journal of the Semiconductor & Display Technology
• /
• v.9 no.4
• /
• pp.1-5
• /
• 2010

The PVA (poly-vinyl alcohol) insulators were spun coated onto ITO coated glass substrates with the capacitors of Glass/ITO/PVA/Al structure. The effects of PVA concentrations (3.0, 4.0 and 5.0 wt%) on the morphology and electrical properties of the films were investigated. As the concentration of PVA increased from 3.0 to 5.0 wt%, the leakage current of device decreased from 17.1 to 0.23 pA. From the AFM measurement, the RMS value decreased with increasing PVA concentration, showing the improvement of insulator film roughness. The capacitances of the films with PVA concentrations of 4.0 and 5.0 wt% were about 28.1 and 24.2 nF, respectively. The lowest leakage current of 1.77 PA was obtained at the film thickness of 117.5 nm for the device with fixed PVA concentration of 5.0 wt%.

• Ocean Science Journal
• /
• v.42 no.4
• /
• pp.199-209
• /
• 2007

Empirical band-ratio algorithms and artificial neural network techniques to retrieve sea surface chlorophyll concentrations were evaluated in the Bohai Sea of China by using an extensive field observation data set. Bohai Sea represents an example of optically complex case II waters with high concentrations of colored dissolved organic mattei (CDOM). The data set includes coincident measurements of radiometric quantities and chlorophyll a concentration (Chl), which were taken on 8 cruises between 2003 and 2005, The data covers a range of variability in Chl in surface waters from 0.3 to 6.5 mg $m^{-3}$. The comparison results showed that these empirical algorithms developed for case I and case II waters can not be applied directly to the Bohai Sea of china, because of significant biases. For example, the mean normalized bias (MNB) for OC4V4 product was 1.85 and the root mean square (RMS) error is 2.26.

• Progress in Superconductivity and Cryogenics
• /
• v.13 no.4
• /
• pp.18-21
• /
• 2011

In this work, the yttrium oxide($Y_2O_3$) thin films as the buffer layer were prepared by the simple solution coating and reel-to-reel process on an unpolished metal tape substrate. The $Y_2O_3$ thin films were successfully synthesized by the hydrolysis of yttrium acetate. We have studied the improvement of surface roughness with the concentration of solution(0.1 M, 0.4 M, M) and the number of coatings. The planarization by solution coating process is simple in comparison with the existing polishing process, and it is eco-friendly, and has the benefits of low cost process. The thickness of $Y_2O_3$ films was increased with the $Y_2O_3$ concentration in the solution, and the surface became smoother with the number of coating cycles. Using this process, we have achieved 1.2 nm RMS roughness from a starting roughness of over 31 nm on 25 ${\mu}m^2$ area.

• Journal of the Korean Solar Energy Society
• /
• v.31 no.4
• /
• pp.48-56
• /
• 2011

Black cobalt solar selective coatings were prepared by thermal oxidation of electroplated cobalt metal on copper and nickel substrates. The optical properties and structure of the black cobalt selective coating for solar energy utilizations were characterized by glow discharge spectrometry (GDS), ultraviolet-visible-near infrared (UV-VIS-NIR) spectrometer, atom force microscopy(AFM) and X-ray photoelectron spectroscopy(XPS). The optical properties of optimum black cobalt selective coating prepared on copper substrate were a solar absorptance of 0.82 and a thermal emittance of 0.01. From the GDS depth profile analysis of these coatings, the concentration of cobalt particles near the interface was higher than at the surface, but oxygen concentration at the surface was higher than at the interface. These results suggest that the selective absorption was dominated by this chemical composition variation in the coating. The surface of this film exhibited morphology with root-mean-square(rms) roughness of about 144.3nm. XPS measurements data showed that several phases of Co coexist($Co_3O_4$,CoO) in the film.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.3 s.36
• /
• pp.213-217
• /
• 2005

The polymer light emitting diodes (PLED) with ITO/PEDOT:PSS/MEH-PPV/Al structure were prepared on ITO(indium tin oxide)/Glass substrates using PEDOT:PSS[poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)] as the hole transport material and MEH-PPV[poly(2-methoxy-5-(2-ethyhexoxy)-1,4phenylenvinylene)] as emission material layer. The dependences on the surface roughnees and friction coefficient between film layers were investigated as a function of the MEH-PPV concentrations$(0.1\;wt\%\~0.9\;wt\%)$. The RMS values decreased from 1.72 nm to 1.00 nm as the concentration of MEH-PPV increased from $0.1\;wt\%\;to\;0.9\;wt\%$, indicating improvement of surface roughness. In addition, friction coefficients decreased from 0.048 to 0.035, which means the deteriorating of the adhesion condition. The PLED sample with $0.5\;wt\%$ of MEH-PPV showed the maximum luminance of $409\;cd/m^2$.

• Journal of Sensor Science and Technology
• /
• v.22 no.3
• /
• pp.175-180
• /
• 2013

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$) as a safe organosilane single precursor in a nonflammable $H_2$/Ar ($H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

• Journal of Ocean Engineering and Technology
• /
• v.10 no.3
• /
• pp.3-13
• /
• 1996

An extensive research programme has been aimed at the effct of ship weight distribution on the ship responses applying ship hydroelasticity theory. In the previous works, consistent tendencies of the still-water and the wave bending moments. respectively, were found as the weight distribution was varied systematically. The paper is therefore concerned mainly with any correlation between still-water and wave bending moments with the variations of weight distribution. Although these bending moments share different features with each other, such a comparison of tendencies was plausible and informative. These and other matters for the future are discussed.

• Journal of the Korean Institute of Gas
• /
• v.23 no.3
• /
• pp.20-26
• /
• 2019

Selective catalytic reduction(SCR) method is widely used among various methods for reducing nitrogen oxides in combustion devices of coal power plant. In the present study, the computational fluid dynamic analysis was accomplished to derive the optimal shape of ammonia-dilution air mixing device in a ammonia injection grid. The distribution characteristics of flow and $NH_3$ concentration had been elucidated for the reference shape of ammonia mixing device(Case 1). In the mixing device of Case 1, it could be seen that $NH_3$ distribution was shifted to the wall opposite to the inlet of the ammonia injection pipe. For the improvement of $NH_3$ distribution, the case(Case 2) with closing one upper injection hole and 4 side injection holes, the case(Case 3) with installing horizontal plate at the upper of ammonia injection pipe, the case(Case 4) with installing horizontal plate and horizontal arc plate at he upper of ammonia injection pipe were investigated by analyzing flow and $NH_3$ concentration distributions. From the present study, it was found that the % RMS of $NH_3$ for Case 4 was 4.92%, which was the smallest value among four cases, and the range of $R_{NH3}$ also has the optimally uniform distribution, -10.82~8.34%.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.5
• /
• pp.1-7
• /
• 2007

AZO thin films have been fabricated on quartz substrate with various Al doping concentrations and annealing temperatures by sol-gel method. The bset condition of (002) orientation and smooth surface (rms = 1.082 nm) is obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$. The optical transmittance of AZO thin films is higher than 80 % in the visible region. We observe that the energy band gap extends with increasing the Al doping concentration. This phenomenon is due to the Burstein-Moss effect. Through the measurement of Hall effect, it is observed that the AZO thin film has larger carrier concentration and smaller electrical resistivity than the pure ZnO thin film. However, the AZO thin film shows the decrease of carrier concentration and the increase of resistivity with the increase of Al concentration, that is due to the segregation of Al at grain boundaries. The maximum carrier concentration of $1.80{\times}10^{19}\;cm^{-3}$ and the minimum resistivity of 0.84 ${\Omega}cm$ are obtained for the AZO thin film doped with 1 mol % Al and annealed at 550 $^{\circ}C$.

• Journal of the Korean Vacuum Society
• /
• v.13 no.1
• /
• pp.29-33
• /
• 2004

In this paper, we investigated the ultra-low temperature(<$150^{\circ}C$) polycrystalline silicon film on plastic substrate application using RF-magnetron sputtering and excimer laser annealing. Amorphous silicon films were deposited using Ar/He mixture gas at $120^{\circ}C$ and in-film argon concentration was less than 2%, which was measured to Rutherford Backscattering Spectrometry. At energy density 320mJ/$\textrm{cm}^2$, RMS roughness was 267$\AA$ and UV crystallinity was 62%. The grain size varies from 50nm to 100nm after excimer laser irradiation.