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http://dx.doi.org/10.5369/JSST.2013.22.3.175

Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane

Kim, Kang-San (Tokai Carbon Korea)
Chung, Gwiy-Sang (School of Electrical Engineering, University of Ulsan)

Publication Information

Journal of Sensor Science and Technology / v.22, no.3, 2013 , pp. 175-180 More about this Journal

Abstract

This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, $Si_2(CH_3)_6$ ) as a safe organosilane single precursor in a nonflammable $H_2$ /Ar ( $H_2$ in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at $1280^{\circ}C$ . The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.

Keywords

Crystalline 3C-SiC; Carbonization; CVD; Hexamethyldisilane;

Citations & Related Records

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