• Title/Summary/Keyword: Complex dielectric function

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Optical Constants and Dispersion Parameters of CdS Thin Film Prepared by Chemical Bath Deposition

  • Park, Wug-Dong
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.196-199
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    • 2012
  • CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

Nonlinear Dielectric Properties of VDCN Copolymers (VDCN계 공중합체의 비선형 유전 특성)

  • Gang, Dae-Ha;Park, Sang-Ho
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.7
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    • pp.279-286
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    • 2002
  • Linear and nonlinear complex permittivities were measured for copolymers of vinylidene cyanide(VDCN) with vinyl acetate(VAc), vinyl propionate(VPr), vinyl bezoate(VBz), styrene(St) and methyl methacrylate(MMA). Experimental results are well fitted by the function (equation omitted) except at low frequency where dc conduction dominates. The analysis of dielectric relaxation mechanism by combined knowledge about linear and nonlinear dielectric permittivities and dipoles give us informations about electrical and thermal motions in these copolymers. According to the analysis it could be found that the variation for temperature of the dielectric relaxation strength in these copolymers is related to the interaction between dipoles and the nonlinear dielectric effect factor R$_{s}$ is proportional to square of the dipolar correlation factor R$_{p}$././.

Dependencies of Dielectric Properties on Temperature and Frequency in PET films with interfaces (계면을 갖는 PET 필름의 유전특성의 온도 및 주파수 의존성)

  • Lee, Chang-Hoon;Lee, Jong-Bok;Lee, Dong-Young;Kang, Moo-Sung;Park, Dae-Hee
    • Proceedings of the KIEE Conference
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    • 1998.11c
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    • pp.938-940
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    • 1998
  • In order to improve insulating character and ability of insulating system of power apparatus, the interfacial and complex structure is widely used. However, the interface or complex structure of insulation materials is reported as a weak point which causes breakdown. As the interface of insulation system degrades its electrical property and eventually causes a failure, the datailed phenomenon analysis is reported. The object of this paper is to evaluate dielectric property of PET film with the interface. The $tan{\delta}$ increased with the existence of semiconducting layer and showed prominent decrease as a function of temperature. Also, the $tan{\delta}$ showed prominent increase as a function of frequency. The dielectric properties of interfacial were affected by the interface characteristics.

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Above bandgap optical properties of ZnS grown by hot-wall epitaxy

  • Lee, M.S.;Koo, M.S.;Kim, T.J.;Kim, Y.D.;Yoo, Y.M.;O, B.;Choi, Y.D.
    • Journal of Korean Vacuum Science & Technology
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    • v.3 no.2
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    • pp.112-115
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    • 1999
  • The real ($\varepsilon$1) and imaginary ($\varepsilon$2) parts of the dielectric function of ZnS have been measured by spectroscopic ellipsometry (SE) in the 3.7-6.0 eV photon-energy range at room temperature. The obtained dielectric function spectra reveal distinct structures at energies E0/(E0+$\Delta$0) and E1 critical points. The spectrum after chemical treatment to remove surface oxide overlayer showed that these data seem to be the best representation of the dielectric function of ZnS, having the largest $\varepsilon$2 value at E1 peak region reported so far by SE. Dielectric-related optical constants of ZnS, such as the complex refractive indices (n+n=ik), absorption coefficient, and reflectance, are also presented.

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Complex dielectric function of CdTe/GaAs thin films studied by spectroscopic ellipsometry (타원 분광기를 이용한 CdTe/GaAs 박막의 복소 유전함수에 관한 연구)

  • Jeen, Gwang-Soo;Jo, Jae-Hyuk;Park, Hyo-Yeol
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.4
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    • pp.157-161
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    • 2005
  • Spectroscopic ellipsomerty measurements of the complex dielectric function of the CdTe thin films grown on GaAs(100) substrates by hot wall epitaxy have been performed in 1.5${\~}$5.5 eV photon energy range at room temperature. The spectroscopic ellipsometer spectra revealed distinct structures at energies of the $E_l,\;E_1+{\Delta}_1$, and $E_2$ critical points. These energies were decreased with increasing thickness of CdTe thin films.

Study of the Correlation of Plasma Resonance and the Refractive Index to Dielectric Dispersion in the Complex Plane

  • Zhou, Xiao-Yong;Shen, Yan;Hu, Er-Tao;Chen, Jian-Bo;Zhao, Yuan;Sheng, Ming-Yu;Li, Jing;Zheng, Yu-Xiang;Zhao, Hai-Bin;Chen, Liang-Yao;Li, Wei;Jiang, Xun-Ya;Lee, Young-Pak;Lynch, David W.
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.27-32
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    • 2013
  • Based on the dispersive feature of the dielectric function of noble metals and the wave vector conservation in physics, both the plasma effect and the complex refractive index, which are profoundly correlated to the complex dielectric function and permeability, have been studied and analyzed. The condition to induce a bulk or a surface plasma in the visible region will not be satisfied, and there will be one solution for the real and the imaginary parts of the refractive index, restricting it only to region I of the complex plane. The results given in this work will aid in understanding the properties of light transmission at the metal/dielectric interface as characterized by the law of refraction in nature.

Analysis of a Crack in a Linear Electrostrictive Ceramic Subjected to Electric Fields (전기장을 받는 선형 전왜세라믹 내의 균열해석)

  • Beom, Hyeon-Gyu;Jeong, Gyeong-Mun;Gang, Sang-Hyeon
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.25 no.2
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    • pp.235-241
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    • 2001
  • A crack with electrically conducting surfaces in a linear electrostrictive ceramic subjected to uniform electric fields is analyzed. Complete forms of electric fields and elastic fields for the crack are derived by using the complex function theory. The linear electromechanical theory predicts overlapping of the traction free crack surfaces. It is shown that the surfaces of the crack are contact near the crack tip. The contact zone size obtained on the basis of the linear dielectric theory for the conducting crack does not depend on the electric fields and depends on only the original crack and the material property for the linear electrostrictive ceramic.

A Superior Description of AC Behavior in Polycrystalline Solid Electrolytes with Current-Constriction Effects

  • Lee, Jong-Sook
    • Journal of the Korean Ceramic Society
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    • v.53 no.2
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    • pp.150-161
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    • 2016
  • The conventional brick-layer model is not satisfactory either in theory or in practice for the description of dispersive responses of polycrystalline solid electrolytes with current-constriction effects at the grain boundaries. Parallel networks of complex dielectric functions have been shown to successfully describe the AC responses of polycrystalline sodium conductors over a wide temperature and frequency range using only around ten model parameters of well-defined physical significance. The approach can be generally applied to many solid electrolyte systems. The present work illustrates the approach by simulation. Problems of bricklayer model analysis are demonstrated by fitting analysis of the simulated data under experimental conditions.

Relaxation Characteristic of the Disordered Lead Scandium Niobate

  • Kim, Yeon Jung
    • Applied Science and Convergence Technology
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    • v.24 no.3
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    • pp.47-52
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    • 2015
  • The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

The Microwave Dielectric Properties of BMCT Ceramics (BMCT 세라믹스의 마이크로파 유전특성)

  • Lee, Mun-Gi;Choe, Ui-Seon;Ryu, Gi-Won;Lee, Yeong-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.8
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    • pp.335-339
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    • 2002
  • Ba(Mgl-xCox)TaO3[BMCT] ceramics were prepared by the conventional mixed oxide method. The ceramics were sintered at the temperature of 1525~$1625^{\circ}C$ for 5hr. in air. The crystal structure of BMCT ceramics was investigated by the XRD. The microstructure of the specimens were observed by SEM. The Microwave dielectric properties of BMCT specimens were investigated as a function of composition and sintering temperature. All BMCT ceramics sintered over 1575$^{\circ}C$ were showed a polycrystalline complex perovskite structure. The density of BMCT (90/10) specimen sintered at $1575^{\circ}C$ was 7.75g/㎤. As the Co contents decreased, the ordering parameter of B-site in BMCT increased. In the case of the BMCT(90/10) ceramics sintered at $1575^{\circ}C$ for 5 hours, dielectric constant, quality factor and temperature coefficient of resonant frequency for microwave dielectrics application were a good value o( 25, 17, 845 at 10㎓ and +2.4 ppm/${\circ}$, respectively.