1 |
M. Jain, 'II-VI Semiconductor compounds' (World Scientific, Singapore, 1993) p258
|
2 |
K. Zanio, 'Semiconductor and semimetals', Vol, 13 (Academic, New York, 1980 )
|
3 |
A. Lopez-Otero 'Hot wall epitaxy', Thin Solid Films 49 (1978) 3
|
4 |
J.M. Ballingall, M.L. Wroge and DJ. Leopold, '(100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxy', Appl. Phys. Lett. 48 (1986) 1273
DOI
|
5 |
H.Y. Park, J.H. Jo, G.S. Jeen and Y.H. Hwang, 'Hot wall epitaxial growth and characteristic of CdTe films', J. Korean Cryst. growth and Cryst. Tech. 14 (2004) 140
|
6 |
M. Fiederle, V. Babentsov, J. Fauler and J.P. Konrath, 'Growth of high resistivity CdTe and (Cd, Zn) Te crystals', Cryst. Res. Technol. 38 (2003) 588
DOI
ScienceOn
|
7 |
C.Y. Bang, M.S. Lee, T.J. Kim and Y.D. Kim, 'Above bandgap optical properties od ZnS and alloys grown by hot wall epitaxy', J. Kor. Physical. Society 39 (2001) 462
|
8 |
M. Oikkonen 'Ellipsometric studies on zinc sulfide thin films grown by atomic layer epitaxy', J. Appl. Phys. 62 (1987) 1385
DOI
|
9 |
Y.-R. Ge and H. Wiedemeier, 'Transient behavior of film growth on off-(100) CdTe substrates by chemical vapor transport', J. Electronic Mater. 27 (1998) 891
DOI
ScienceOn
|
10 |
K.W. Boer, 'Survey of semiconductor physics' (Van nostrand Reinhold, New York, 1990) p.233
|
11 |
K.J. Kim, M.H. Lee, T.W Kang and M.S. Han, 'Spectroscopic ellipsometry study on strain relaxation of CdTe/GaAs(001) epitaxial films', Solid State Commun. 106 (1998) 597
DOI
ScienceOn
|
12 |
Y.-R. Ge and H. Wiedemeier, 'Transient behavior of film growth on (111)B CdTe substrates by chemical vapor transport', J. Electronic Mater. 28 (1999) 91
DOI
ScienceOn
|
13 |
M.S. Han, T.W Kang, J.H. Leem, B.K. Song, YB. Hou, WH. Baek, M.H. Lee, J.H. Bahng, K.J. Kim, J.M. Kim, H.K. Kim and T.W Kim, 'Strain effects in CdTe(111) epitaxial layers grown on GaAs(100) substrates by molecular beam epitaxy',J. Electronic Mater. 26 (1997) 507
DOI
ScienceOn
|
14 |
H. Tatsuoka, H. Kuwabara, Y Nakanishi and H. Fujiyasu, 'Strain relaxation of CdTe(100) layers grown by hot-wall epitaxy on GaAs(100) substrates', J. Appl. Phys. 67 (1990) 6860
|
15 |
H. Tatsuoka, H. Kuwabara, H. Fujiyasu and Y Nakanishi, 'Growth of CdTe on GaAs by hot-wall epitaxy and its stress relaxation', J. Appl. Phys. 65 (1989) 2073
|
16 |
M.S. Han, T.W. Kang, M.D. Kim, Y.T Jeoung, H.K. Kim, J.M. Kim, H.J. Woo and T.W. Kim, 'The effect of hydrogenation in thin films grown on pCdTe (211) B substrates', Appl. Sur. Sci. 120 (1997) 287
DOI
ScienceOn
|
17 |
L. Vina, C. Umbach, M. Cardona and L. Vodopyanov 'Ellipsometric studies of electronic interband transitions in ', Phys. Rev. B 29 (1984) 6752
DOI
|