• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.10
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• pp.1927-1934
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• 2016

In this paper, we proposed a I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistor) structure in order to mitigate a radiation-induced leakage current path in an isolation oxide interface of a silicon-based standard n-MOSFET. The proposed I-gate n-MOSFET structure was designed by using a layout modification technology in the standard 0.18um CMOS (Complementary Metal Oxide Semiconductor) process, this structure supplements the structural drawbacks of conventional radiation-tolerant electronic device using layout modification technology such as an ELT (Enclosed Layout Transistor) and a DGA (Dummy Gate-Assisted) n-MOSFET. Thus, in comparison with the conventional structures, it can ensure expandability of a circuit design in a semiconductor-chip fabrication. Also for verification of a radiation-tolerant characteristic, we carried out M&S (Modeling and Simulation) using TCAD 3D (Technology Computer Aided Design 3-dimension) tool. As a results, we had confirmed the radiation-tolerant characteristic of the I-gate n-MOSFET structure.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3844-3853
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• 2023

Although radiation and chemotherapy methods for cancer therapy have advanced significantly, surgical resection is still recommended for most cancers. Therefore, intraoperative imaging studies have emerged as a surgical tool for identifying tumor margins. Intraoperative imaging has been examined using conventional imaging devices, such as optical near-infrared probes, gamma probes, and ultrasound devices. However, each modality has its limitations, such as depth penetration and spatial resolution. To overcome these limitations, hybrid imaging modalities and tracer studies are being developed. In a previous study, a multi-modal laparoscope with silicon photo-multiplier (SiPM)-based gamma detection acquired a 1 s interval gamma image. However, improvements in the near-infrared fluorophore (NIRF) signal intensity and gamma image central defects are needed to further evaluate the usefulness of multi-modal systems. In this study, an attempt was made to change the NIRF image acquisition method and the SiPM-based gamma detector to improve the source detection ability and reduce the image acquisition time. The performance of the multi-modal system using a complementary metal oxide semiconductor and modified SiPM gamma detector was evaluated in a phantom test. In future studies, a multi-modal system will be further optimized for pilot preclinical studies.

• Journal of Sensor Science and Technology
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• v.31 no.3
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• pp.151-155
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• 2022

In this paper, we present a highly-sensitive gate/body-tied (GBT) metal-oxide semiconductor field-effect transistor (MOSFET)-type photodetector using multi-finger structure whose photocurrent increases in proportion to the number of fingers. The drain current that flows through a MOSFET using multi-finger structure is proportional to the number of fingers. This study intends to confirm that the photocurrent of a GBT MOSFET-type photodetector that uses the proposed multi-finger structure is larger than the photocurrent per unit area of the existing GBT MOSFET-type photodetectors. Analysis and measurement of a GBT MOSFET-type photodetector that utilizes a multi-finger structure confirmed that photocurrent increases in ratio to the number of fingers. In addition, the characteristics of the photocurrent in relation to the optical power were measured. In order to determine the influence of the incident the wavelength of light, the photocurrent was recorded as the incident the wavelength of light varied over a range of 405 to 980 nm. A highly-sensitive GBT MOSFET-type photodetector with multi-finger structure was designed and fabricated by using the Taiwan semiconductor manufacturing company (TSMC) complementary metal-oxide-semiconductor (CMOS) 0.18 um 1-poly 6-metal process and its characteristics have been measured.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.184-188
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• 2014

There is a trade-off between read stability and writability under a full-/half-select condition in static random access memory (SRAM). Another trade-off in the minimum operating voltage between the read and write operation also exists. A new peripheral circuit for SRAM arrays, called a variation sensor, is demonstrated here to balance the read/write margins (i.e., to optimize the read/write trade-off) as well as to lower the minimum operation voltage for both read and write operations. A test chip is fabricated using an industrial 45-nm bulk complementary metal oxide semiconductor (CMOS) process to demonstrate the operation of the variation sensor. With the variation sensor, the word-line voltage is optimized to minimize the trade-off between read stability and writability ($V_{WL,OPT}=1.055V$) as well as to lower the minimum operating voltage for the read and write operations simultaneously ($V_{MIN,READ}=0.58V$, $V_{MIN,WRITE}=0.82V$ for supply voltage $(V_{DD})=1.1V$).

• Proceedings of the KSRS Conference
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• 2007.10a
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• pp.464-467
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• 2007

All image data acquisition systems for example the digital camera and digital camcorder, use the image sensor to convert the image data (light) into electronic data. These image sensors are used in satellite camera for high quality and resolution image data. There are two kinds of image sensors, the one is the CCD (charge coupled device) detector sensor and the other is the CMOS (complementary metal-oxide semiconductor) image sensor. The CCD sensor control system has more complex than the CMOS sensor control system. For the high quality image data on CCD sensor, the precise timing control signal and the several voltage sources are needed in the control system. In this paper, the comparison of the CCD with CMOS sensor, the CCD sensor characteristic, and the control system will be described.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.79-79
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• 2003

최근 CMOS(Complementary Metal Oxide Semiconductor) 능동소자에 사용되는 MOS-FET (Metal Oxide Semiconductror Field Effect Transitror)의 전체적인 크기 감소추세에 따라 금속 전극과 반도체 사이의 절연층 두께 감소가 요구되고 있다. 현재 보편적으로 사용되고 있는 SiO$_2$층은 두께 감소에 따른 터널링 전류의 증가로 더 이상의 두께 감소를 기대하기 어려운 상태이다. 이러한 배경에서 최근 터널링 전류를 충분히 감소시키면서 요구되는 절연특성을 얻을 수 있는 새로운 고유전 물질 (high-k dielectric material)에 대한 연구가 이루어지고 있다. 현재까지 연구되어온 고유전 물질 중, 고유전 상수, 큰 밴드갭, Si과의 열적 안정성을 갖는 물질로 ZrO$_2$가 주목을 받고 있다. 본 연구에서는 Metal Organic Molecular Beam Epitaxy (MOMBE) 방법을 이용한 ZrO$_2$ 층의 성장조건 및 특성을 평가하고자 한다.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• ETRI Journal
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• v.30 no.6
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• pp.783-789
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• 2008

A bio-inspired vision chip for edge detection was fabricated using 0.35 ${\mu}m$ double-poly four-metal complementary metal-oxide-semiconductor technology. It mimics the edge detection mechanism of a biological retina. This type of vision chip offer several advantages including compact size, high speed, and dense system integration. Low resolution and relatively high power consumption are common limitations of these chips because of their complex circuit structure. We have tried to overcome these problems by rearranging and simplifying their circuits. A vision chip of $160{\times}120$ pixels has been fabricated in $5{\times}5\;mm^2$ silicon die. It shows less than 10 mW of power consumption.

• The Journal of the Korea Contents Association
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• v.10 no.7
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• pp.40-48
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• 2010

Reflected-Ultraviolet photography is applied to the evidence of crime, Archaeology, and Dermatology. In the past, Ultraviolet photography was done with standard black-and-white film. Because emulsion of film is more sensitive to near UV light than CCD(Charge Coupled Device) or CMOS(Complementary Metal-Oxide-Semiconductor)of digital camera. In this research, we purpose to improve qulity of ultraviolet photographs and to find out the best alternative digital camera by utilizing a cunsumer digital camera. To achieve theses, we removed IR cutoff filter from digital camera. And by using modified UV pass filter, we verified the increase of image resolution of digital ultraviolet photographs. Also, we analyze reproducibility of digital ultraviolet photographs according to type, size, pixel of image sensor. Furthermore, this research resulted in the development of an practical digital camera system by utilizing a cunsumer digital camera. Eventually, it will contribute to practical use in the various field of digital ultraviolet photographs