• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.198-201
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• 2006

The optimization of poly-Si TFT process on metal foil for UTL AMOLED was systematically investigated. The improvement in device performance of poly-Si TFT on metal foil was achieved by optimizing the dopant activation condition and gate dielectric structure. Hence, the world first flexible full color 5.6-inch AMOLED with top emission mode on poly-Si TFT stainless steel foil is demonstrated.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1658-1660
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• 2007

We fabricate green device having unique life time characteristics of operating voltage reduction with time, ${\Delta}V_{op}$ <0. A green device needs lower voltage than initial voltage for sustaining constant current as life time goes on. It means there are two possible reasons; one is interface modification between anode and HIL due to oxygen plasma treatment and the other is bulk property modification due to combination of new green host and new green dopant. From these materials and oxygen plasma treatment, we can make white OLED device having the characteristics of low ${\Delta}V_{op}$ increasing.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1581-1584
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• 2008

In dual-polycide-gate structure with butting contact, net doping concentration of polysilicon was decreased due to overlap between $n^+$ and $p^+$ and lateral dopant diffusion in silicide/polysilicon layers. The generation of parasitic Schottky diode in butting contact region is attributed both to the $CoSi_2$-loss due to $CoSi_2$ agglomeration and to the decrease in net doping concentration of polysilicon layer. Parasitic Schottky diode reduces noise margin of sense amplifier in DDI DRAM, which causes column fail. The column fail could be reduced by physical isolation of $n^+/p^+$ polysilicon junction or suppressing $CoSi_2$ agglomeration by using nitrogen implantation into $p^+$ polysilicon before $CoSi_2$ formation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.24-31
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• 2005

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value using UV-transmittance was found to correlate well with the one measured using Raman Spectroscopy. The sheet resistance decreases as the acceleration voltage increases from 1kV to 15kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. The reduction in carrier concentration due to electron trapping at uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant-activation and damage-recovery, such as furnace annealing, excimer laser annealing, and rapid thermal annealing, respectively.

• 대한공업교육학회지
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• v.33 no.1
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• pp.249-264
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• 2008

In this dissertation, shallow $p^+-n$ junctions were formed by ion implantation and dual-step annealing processes and a new simulator is designed to model boron diffusion in silicon. This simulator predicts the boron distribution after ion implantation and annealing. The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a RTA(Rapid Thermal Annealing) and a FA(Furnace Annealing) process. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of sheet resistance and the simulator reproduced experimental data successfully. Therefore, proposed diffusion simulator and FA+RTA annealing method was able to applied to shallow junction formation for thermal budget. process.

• Journal of the Korean Ceramic Society
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• v.25 no.5
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• pp.443-448
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• 1988

Colored Cubic Zircona(CCZ) single crystals were grown by the skull melting method. The grown crystals were doped with up to 0.1wt% transition (Cu, Ni, Co, Ti, Fe, Mo, Cr, V, Mn) metal ions on ZrO2-Y2O3(9.5~10mol%) and their Optical transmission spectra(λ=300~800nm)data were obtained. Various colors were pronounced due to dopant effects in the grown Crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1474-1477
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• 2007

We demonstrate relaxation of roll-off characteristics by controlling the dopant concentrations and the thickness of an emitter layer in electrophosphorescence diodes composed of 2,6-dicarbazolo-1,5-pyridine (PYD2)-host doped with 25 wt%-Iridium(III)bis[(4,6-di-fluorophenyl)-pyridinato-$N,C^2$] picolinate (FIrpic).

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.813-817
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• 1987

High value sheet resistance (Rs' 1K-33K\ulcorner/) polysilicon resistors were fabricated using double ion implantation with boron as the major dopant and phosphorus compensation. It is observed that Rs sensitivity to the net doping concentration is decreased by one order of magnitude compared to the conventional (boron implanted)polysilicon resistors. The temperature co-efficient of resistance (TCR) measured between 25\ulcorner and 125\ulcorner shows equivalent values to those of non-compensated resistors for the same Rs. A qualitative electrical conductiion mechanism for compensated polysilicon resistor is proposed, based on the existing grain boundary charge trapping theory.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.178-180
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• 2003

We performed semiempirical (AMl and ZINDO) and ab initio (HF and DFT) calculations, to investigate molecular structures and optical properties of DCM and its derivatives. DCM and its derivatives are used as a red fluorescent dopant of the organic electroluminescent host materials, $Alq_3$. We have studied the relationship between the molecular structure and the optical properties of these molecules for the improvement of EL efficiencies. Wavelength at the absorption maximum was found to be red-shifted when the molecule is substituted with both strong electron donating and withdrawing functional groups. A new red fluorescent dye was predicted by QSPR study based on calculations and experimental data.