Fabrication and polysilicon Resistors Compensated with Boron and Phosphorous Ion-Implantation

Boron과 Phosphorous 이온주입에 의한 다결정 실리콘 저항의 제조

High value sheet resistance (Rs' 1K-33K\ulcorner/) polysilicon resistors were fabricated using double ion implantation with boron as the major dopant and phosphorus compensation. It is observed that Rs sensitivity to the net doping concentration is decreased by one order of magnitude compared to the conventional (boron implanted)polysilicon resistors. The temperature co-efficient of resistance (TCR) measured between 25\ulcorner and 125\ulcorner shows equivalent values to those of non-compensated resistors for the same Rs. A qualitative electrical conductiion mechanism for compensated polysilicon resistor is proposed, based on the existing grain boundary charge trapping theory.