• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.10
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• Tribology and Lubricants
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• v.31 no.6
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• pp.239-244
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• 2015

Chemical mechanical polishing (CMP) is one of the most important processes for enabling sub-14 nm semiconductor manufacturing. Moreover, post-CMP defect control is a key process parameter for the purpose of yield enhancement and device reliability. Due to the complexity of device with sub-14 nm node structure, CMP-induced defects need to be fixed in the CMP in-situ cleaning module instead of during post ex-situ wet cleaning. Therefore, post-CMP in-situ cleaning optimization and cleaning efficiency improvement play a pivotal role in post-CMP defect control. CMP in-situ cleaning module normally consists of megasonic and brush scrubber processes. And there has been an increasing effort for the optimization of cleaning chemistry and brush scrubber cleaning in the CMP cleaning module. Although there have been many studies conducted on improving particle removal efficiency by brush cleaning, these studies do not consider the effects of brush contamination. Depending on the process condition and brush condition, brush cross contamination effects significantly influence post-CMP cleaning defects. This study investigates brush cross contamination effects in the CMP in-situ cleaning module by conducting experiments using 300mm tetraethyl orthosilicate (TEOS) blanket wafers. This study also explores brush pre-treatment in the CMP tool and proposes recipe effects, and critical process parameters for optimized CMP in-situ cleaning process through experimental results.

• Laser Solutions
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• v.6 no.2
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• pp.27-33
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• 2003

A laser shock cleaning technology is a new dry cleaning methodology for the effective removal of small particles from the surface. This technique uses a plasma shock wave produced by a breakdown of air due to an intense laser pulse. In order to optimize the laser shock cleaning process, it needs to evaluate the cleaning performance quantitatively by using a monitoring technique. In this paper, an acoustic monitoring technique was attempted to investigate the laser shock cleaning process with an aim to optimize the cleaning process. A wide-band microphone with high sensitivity was utilized to detect acoustic signals during the cleaning process. It was found that the intensity of the shock wave was strongly dependent on the power density of laser beam and the gas species at the laser beam focus. As a power density was larger, the shock wave became stronger. It was also seen that the shock wave became stronger in the case of Ar gas compared with air and N$_2$ gas.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.109-115
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• 2008

The cleaning process of contaminant particles adhering to the microchips, integrated circuits (ICs) or the like is essential in modern microelectronics industry. In the cleaning process particularly working with the application of inert gases, the removal of contaminant particles of submicron scale is very difficult because the particles are prone to reside inside the boundary layer of the working fluid, The use of cryogenic $CO_2$ cleaning method is increasing rapidly as an alternative to solve this problem. In contrast to the merits of high efficiency of this process in the removal of minute particles compared to the others, even fundamental parametric studies for the optimal process design in this cleaning process are hardly done up to date, In this study, we attempted to measure the cleaning efficiency with the variations of some principal parameters such as mass flow rate, injection distance and angle, and tried to draw out optimal cleaning conditions by measuring and evaluating an effective cleaning width called $d_{50}$.

• Journal of the Korean Graphic Arts Communication Society
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• v.15 no.2
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• pp.1-4
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• 1997

Existing cleaning solvent using screen printing are the organic solvents including aromatic compounds carried with poisonous and stench. besides, Cleaning method of current screen printing are for the most part mixed cleaning method of dipping and polish. Using 1,1,1-TCE, CFC-113 alternative system cleaning solvent be substituted for existing cleaning solvent against screen printing ink measured the cleaning efficiency according to gravimetric analysis method and property change of gassamer according to Image Analyzer. Also, Cleaning process system carry with excellent cleaning efficiency studied which was proposed new cleaning process including ultrasonic cleaning process be substituted for existing mixed cleaning method of dipping and polish.

• Korean Journal of Computational Design and Engineering
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• v.20 no.3
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• pp.291-297
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• 2015

A water jet cleaning robot system for micro drill bits is to refurbish micro drill bits used for the PCB manufacturing process. It can refurbish drill bits with the minimum diameter of ${\phi}0.15{\sim}0.075mm$ of which the total quantity have been discarded before. Micro drill bits with the minimum diameter of ${\phi}0.075mm$ can be cleaned by applying the water jet cleaning robot system out of the manual ultrasonic cleaning in the past for the cleaning equipment as the initial process in refurbishing. This study analyzed problems, while applying the apparatus mechanism for the workability such as the robot traces of Transfer Robot I and II, drill bit loading and unloading, and cleaning tasks in the water jet cleaning robot system in an effort to carry out simulations. In addition, the cleaning work process was optimized as the work process was verified in advance and the production quantity was analyzed through simulations.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1880-1884
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• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.7-11
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• 2012

Among various wet cleaning methods, megasonic and jet spray gained their popularity in single wafer cleaning process for the efficient removal of particulate contaminants from the wafer surface. In the present study, we evaluated these two cleaning methods for particle removal efficiency (PRE) and pattern damage on the aluminum layered wafer surface. Also the effect of $CO_2$ dissolved water in jet spray cleaning is assessed by measuring PRE. It is observed that the jet spray cleaning process is more effective in terms of PRE and pattern damage compared to megasonic cleaning and the mixing of $CO_2$ in the water during jet sprays further increases the PRE. We believe that the outcome of the present study is useful for the semiconductor cleaning process engineers and researchers.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.3
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• pp.381-392
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• 2020

The necessity and the importance of the remanufacturing are increasing day by day along with environmental problems. Many studies are being conducted on remanufacturing, but the research for cleaning is much lacking. This study aims to evaluate the effective cleaning method for remanufacturing of start motors, one of the automobile parts. The cleaning process consists of oil stain removal, drying and rust removal processes. In this study, the two processes were conducted except for the drying process which has little influence on cleaning. The methodology for cleaning agent selection, degreasing and rust removal process was presented. For each methodology, five analysis factors were calculated by two-way comparison according to the process, and the values were evaluated quantitatively by substituting them into the evaluation table. In the selection of cleaning agent, neutral system, ultrasonic cleaning in degreasing, and grinding in rust removal were selected as the best cleaning methods.