• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.94-98
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• 2012

The behavior of ozone micro bubble cleaning system was investigated to evaluate the solution as a new method of solar cell wafer cleaning in comparison with former conventional RCA cleaning. We have developed the ozone dissolution system in the ozonated water for more efficient cleaning conditions. The optimized cleaning conditions for solar cell wafer process were 10 ppm of ozone concentration and 12 minutes in cleaning periods, respectively. We have confirmed the cleaning reliability and cell efficiencies after ozone micro bubble cleaning. Using this new cleaning technology, it was possible to obtain higher efficiency, higher productivity, and fast tact time for applying cleaning in the fields on bare ingot wafer, LED wafers as well as the solar cell wafer.

• Clean Technology
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• v.17 no.2
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• pp.117-123
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• 2011

In this study, evaluation tests for cleaning performance of various cleaning agents and selection of optimal ultrasonic cleaning parameters were executed to develop an efficient cleaning process in remanufacturing of laser copy machine. Cleaning performance tests were executed with 8 cleaning agents (A~H) to remove the contaminants of oil-ink, toner particles, and shoe polish. Physical properties and foamability tests were also applied. For 3 types of contaminants, cleaning agent G showed superior cleaning performance compared to agent A which has being used at a remanufacturing of laser copy machine in Korea. With cleaning agents selected in pre-tests, ultrasonic cleaning tests were executed to remove real contaminants on the parts of used digital laser copy machine parts. Cleaning agent G at 28 kHz ultrasonic frequency showed faster cleaning performance compared to agent A and other frequencies. The productivity and economic efficiency in remanufacturing of laser copy machine are expected to increase by adapting agent G and 28 kHz frequency at ultrasonic cleaning process.

• Journal of the Korean Society of Clothing and Textiles
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• v.23 no.7
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• pp.987-997
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• 1999

The purpose of this study was finding out the appropriate cleaning method for buried fabrics from old tombs focusing on the conservation of textiles. Cleaning effects and physical properties change depending on cleaning method have been analysed, The following results were obtained from this study : 1. Wet cleaning showed better effect on the cleaning of fabrics compared to solvent cleaning which meant more water-soluble soils existed than oily soils. 2. All the cleaning methods used did not cause any distorsion or shrinkage to the fabrics because fabrics had been stabilized for a long time 3. Addition of detergent to cleaning system decreased the friction of fiber during cleaning rocess so that the damage of fabrics could be minimized., 4. Ironing is an undesirable process because heat remarkably weakened fibers.

• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.1-6
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• 2003

In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.45-50
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• 2020

We investigated the Si_1-xGe_x surface properties when dry cleaning the films using NF₃ / H₂O remote plasma. After the dry cleaning process, it was found that about 80-250 nm wide bumps were formed on the SiGe surface regardless of Ge concentration in the rage of x = 0.1 ~ 0.3. In addition, effects of the dry cleaning processing parameters such as pressure, substrate temperature, and H₂O flow rates were examined. It was found that the surface bump is significantly dependent on the flow rate of H₂O. Based on these observations, we would like to provide additional guidelines for implementing the dry cleaning process to SiGe materials.

• Journal of Korean Society of Water and Wastewater
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• v.25 no.2
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• pp.177-184
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• 2011

Membrane fouling is an unavoidable phenomenon in operation of seawater reverse osmosis (SWRO) and major obstacle for economic and efficient operation. When fouling occurs on the membrane surface, the permeate flux is decreased, on the contrary, the trans-membrane pressure (TMP) is increased, therefore operation and maintaining costs and potential damage of membranes are able to the pivotal risks of the process. Chemical cleaning process is essential to prevent interruptions for effective RO membrane filtration process. This study focused on proper chemical cleaning condition for polyamide RO membranes of 4 companies. Several chemical agents were applied for chemical cleaning under numbers of operating conditions. Additionally, a monitoring tool of FEEM as autopsy analysis method is adapted for the prediction of organic bio-fouling.

• Clean Technology
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• v.10 no.2
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• pp.61-72
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• 2004

In this study, aqueous/semi-aqueous cleaning agents which consist of organic solvent, surfactant, cosurfactant, and water were developed by changing formulation parameters such as organic solvent type and contents, surfactant type and contents, and cosurfactant/surfactant(A/S) ratio, etc.. And physical properties and flux removal of the formulated cleaning agents have been evaluated. Also, the performance of oil-water separation from the rinse water contaminated during the cleaning process was evaluated for its recycling. The formulated cleaning agents in this work expected to have good penetration because of their low viscosity and low surface tension values of 30.2~32.5 dyne/cm. The flux removal with the terpene type cleaning agent was higher than that with hydrocarbon type cleaning agent and two commercial products (CPA(commercial product A), CPB(commercial product B)). And the performance of oil-water separation by gravity settling from the rinse water contaminated with formulated cleaning agent and soils was shown to be very good. The cleaning agents developed in this work were applied to surface mounting technology(SMT) cleaning process for manufacturing electronic parts at L electronic company. As a result, the newly developed cleaning agents showed two times better cleaning speed for removal of solder cream than the conventional ond containing ethanol and IPA(isopropyl alcohol). In addition, malodor and VOC problems generated by the previous organic cleaning agents have been solved in the manufacturing field through introduction of the non-volatile and environmental-friendly cleaning agents to the field.

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.

• Proceedings of the Membrane Society of Korea Conference
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• 1999.10a
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• pp.93-116
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• 1999

MF membrane element was specially designed for water purification and VSA process which can solve the fouling problem. Especially VSA process is developed for the SK Chemicals' asymmetric microfiltration hollow fiber membranes. In case of outside-to-in filtration process, MF membrane element showed the excellent flux stability caused by cleaning ability of VSA process . Simultaneous back-washing with VSA consideratbly enhances cleaning efficiency. From the result the possibility of the replacement of chemical coagulation and sand filtration process with newly developed VSA process was revealed.

• Proceedings of the Membrane Society of Korea Conference
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• 1999.07a
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• pp.63-66
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• 1999

MF membrane element was specially designed for water purification and VSA process which can solve the fouling problem. Especially VSA process is developed for the SK Chemical's asymmetric microfiltration hollow fiber membranes. In case of outside-to-in filtration process, MF membrane element showed the excellent flux stability caused by cleaning ability of VSA process. Simultaneous back- washing with VSA considerably enhances cleaning efficiency. Form the result, the possibility of the replacement of chemical coagulation and sand filtration process with newly developed VSA process was revealed.