• 한국지능시스템학회논문지
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• 제16권5호
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• pp.627-634
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• 2006

CMOS 인버터 특성곡선의 기울기를 조절하는 방법과 y축으로 이동할 수 있는 방법을 제안하였다. 기울기의 변경과 y축으로 이동은 트랜지스터의 문턱 값을 조절하는 방법을 사용하였다. 그리고 특성곡선의 중심에서는 두 트랜지스터 모두 포화영역에 머물러 있음에 착안하여, 단극성 뉴런의 특성곡선을 만드는 방법을 제안하였다. 제안된 방법은 회로레벨의 시뮬레이션을 통해 검증하였으며, 회로레벨의 시뮬레이션은 OrCAD사의 PSpice(Professional Simulation Program with Integrated Circuit Emphasis)를 사용하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권1호
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• pp.28-33
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• 2013

Spin-torque oscillators (STO) is a new device that can be used as a tunable microwave source in various wireless devices. Spin-transfer torque effect in magnetic multilayered nanostructure can induce precession of magnetization when bias current and external magnetic field are properly applied, and a microwave signal is generated from that precession. We proposed a semi-empirical circuit-level model of an STO in previous work. In this paper, we present a refined STO model which gives more accuracy by considering physical phenomena in the calculation of effective field. Characteristics of the STO are expressed as functions of external magnetic field and bias current in Verilog-A HDL such that they can be simulated with circuit-level simulators such as Hspice. The simulation results are in good agreement with the experimental data.

• 한국산업정보학회:학술대회논문집
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• 한국산업정보학회 1998년도 공동추계학술대회 경제위기 극복을 위한 정보기술의 효율적 활용
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• pp.827-834
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• 1998

This paper describes a multi-level simulation technique and its implementation, which accurately solve voltages and currents of circuits descreibed at mixed levels of abstractions. A metho to form a tightly coupled simulation environment is proposed and, starting from a description of a circuit, simulation set-up and analysis procedure of the multi-level simulator for a transient response are presented. Circuit and behavioral simulation techniques and their implementations composing the multi-level simulation are explained in detail. Most of the algorithms implemented in the simulation are based upon the standard simulation techniques in order to obtain the reliability and accuracy of conventinoal simulators. Simulation examples show that the multi-level simulator can analyze circuits containing highly nonlinear behavioral models without loss of accuracy provided the behavioral models are accurate enough.

• 전자공학회논문지A
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• 제31A권9호
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• pp.146-155
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• 1994

In this paper, we desribe a new system, called BEST, that is used to develop a macromodel or behavioral model easily. It automatically calculates the component values of macromodel represented by equations to satisfy the given specification. Also, it gives the way to analyze both the behavioral model and transistor level circuit, and then compare the analysis results of them to check the correspondence under specific temperature and bias condition, and BEST optimizes the component values of macromodel. Other feature is to characterize MOSFET as switch model which consists of PWL-RC network. Finally, it is possible to generage multi-level netlist which consists of macro/switch/transistor level circuits, and user can determine the trade-off between simulation speed and accuracy. With the graphic user interface form of macromodel development system described above. BEST enable designers to make macromodel by themselves and to uas it. We applied BEST to develop the macromodel for the test circuit and got the 18.6 times simulation speed up with preserving the accuracy within 10% compared to the conventional transistor level circuit simulation. Also, applicability of optimization capability was verified.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.13-17
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• 2013

In this paper, we designed a charge pump circuit using level shifter for LED driver IC. The designed circuit makes the 15 V output voltage from the 5 V input in condition of 50 kHz switching frequency. The prototype chip which include the proposed charge pump circuit and its several internal sub-blocks such as oscillator, level shifter was fabricated using a 0.35 um 20 V BCD process technology. The size of the fabricated prototype chip is 2,350 um ${\times}$ 2,350 um. We examined performances of the fabricated chip and compared its measured results with SPICE simulation data.

• 한국시뮬레이션학회논문지
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• 제3권1호
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• pp.107-114
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• 1994

This paper describes an integrated environment for logic circuit simultion which is an important step of logic circuit design. The system consists of a logic simulator kernel, an expandible element routine library. a functional level element routine generator, several HDL input parsers, and a postprocessor. The system can simulate the same system in several levels of hierarchy. The experimental result shows that the system is very efficient and useful for design of logic circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.319-329
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• 2016

High-level design aids are mandatory for design of a continuous-time delta-sigma modulator (CTDSM). This paper proposes a top-down methodology design to generate a noise transfer function (NTF) which is compensated for excess loop delay (ELD). This method is applicable to low pass loop-filter topologies. Non-ideal effects including ELD, integrator scaling issue, finite op-amp performance, clock jitter and DAC inaccuracies are explicitly represented in a behavioral simulation of a CTDSM. Mathematical modeling using MATLAB is supplemented with circuit-level simulation using Verilog-A blocks. Behavioral simulation and circuit-level simulation using Verilog-A blocks are used to validate our approach.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.20-23
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• 2008

We proposed a-Si:H TFT (hydrogenated amorphous silicon thin film transistor) level shifter which reduced number of power sources. To reduce the number of power sources from four to two, modified bootstrapped inverter was used for the level shifter. The shift register was verified by PSPICE circuit simulation and fabricated. The fabricated level shifter successfully shifted low input (0 to 5 V) to high level output (-7 to 23 V).

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.354-357
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• 1999

This paper is proposed Single phase Multi-Level AC-DC Converter. This is consist of diode bridge and switches. The number of the supply current levels depends on the number of the individual converter's current level. In this converter circuit the number of the levels is equal to 2(M+1) -1, where M is the number of Switching-Leg's number. In this paper is introduced converter with 31 current Level. If the number of current level is increased, smoother sinusoidal waveform can be obtained. The feasibility of the circuit is verified by computer simulation using PSIM

• 전자공학회논문지A
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• 제31A권1호
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• pp.93-102
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• 1994

This paper, presents SECRET(SEC REliability Tool), which predicts reliability problems related to the hot-carrier and electromigration effects on the submicron MOSFETs and interconnections. To simulate DC and AC lifetime for hot-carrier damaged devices, we have developed an accurate substrate current model with the geometric sensitivity, which has been verified over the wide ranges of transistor geometries. A guideline can be provided to design hot-carrier resistant circuits by the analysis of HOREL(HOT-carrier RFsistant Logic) effect, and circuit degradation with respect to physical parameter degradation such as the threshold voltage and the mobility can also be expected. In SECRET, DC and AC MTTF values of metal lines are calculated based on lossy transmission line analysis, and parasitic resistances, inductances and capacitances of metal lines are accurately considered when they operate in the condition of high speed. Also, circuit-level reliability simulation can be applied to the determination of metal line width and-that of optimal capacitor size in substrate bias generation circuit. Experimental results obtained from the several real circuits show that SECERT is very useful to estimate and analyze reliability problems.