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http://dx.doi.org/10.5391/JKIIS.2006.16.5.627

CMOS neuron activation function  

Kang, Min-Jae (제주대학교 전기.전자공학부)
Kim, Ho-Chan (제주대학교 전기.전자공학부)
Song, Wang-Cheol (제주대학교 정보공학과)
Lee, Sang-Joon (제주대학교 정보공학과)
Publication Information
Journal of the Korean Institute of Intelligent Systems / v.16, no.5, 2006 , pp. 627-634 More about this Journal
Abstract
We have proposed the methods how to control the slope of CMOS inverter's characteristic and how to shift it in y axis. We control the MOS transistor threshold voltage for these methods. By observing that two transistors are in saturation region at the center of the CMOS inverter's characteristic, we have presented how to make the characteristic for one pole neuron. The circuit level simulation is used for verifying the proposed method. PSpice(OrCAD Co.) is used for circuit level simulation.
Keywords
CMOS inverter; Characteristic; Threshold voltage; Saturation region; One pole neuron; Circuit level simulation; PSpice;
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