• Title/Summary/Keyword: Circuit Modeling

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A Study on AC Modeling of the ESD Protection Devices (정전기 보호용 소자의 AC 모델링에 관한 연구)

  • Choi, Jin-Young
    • Journal of IKEEE
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    • v.8 no.1 s.14
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    • pp.136-144
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    • 2004
  • From the AC analysis results utilizing a two dimensional device simulator, the ac equivalent-circuit modeling of the ESD protection devices is executed. It is explained that the ac equivalent circuit of the NMOS protection transistor is modeled by a rather complicated form and that, depending on the frequency range, the error can be large if it is modeled by a simple RC serial circuit. It is also shown that the ac equivalent circuit of the thyristor-type pnpn protection device can be modeled by a simple RC serial circuit. Based on the circuit simulations utilizing the extracted equivalent circuits, the effects of the parasitics in the protection device on the characteristics of LNA are examined when the LNA, which is one of the important RF circuits, is equipped with the protection device. It is explained that a large error can result in estimating the circuit characteristics if the NMOS protection transistor is modeled by a simple capacitor. It is also confirmed that the degradation of the LNA characteristics by incorporating the ESD protection device can be reduced a lot by adopting the suggested pnpn device.

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Numerical Study on Package Warpage as Structure Modeling Method of Materials for a PCB of Semiconductor Package (반도체 패키지용 PCB의 구조 모델링 방법에 따른 패키지의 warpage 수치적 연구)

  • Cho, Seunghyun;Ceon, Hyunchan
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.4
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    • pp.59-66
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    • 2018
  • In this paper, we analyzed the usefulness of single-structured printed circuit board (PCB) modeling by using numerical analysis to model the PCB structure applied to a package for semiconductor purposes and applying modeling assuming a single structure. PCBs with circuit layer of 3rd and 4th were used for analysis. In addition, measurements were made on actual products to obtain material characteristics of a single structure PCB. The analysis results showed that if the PCB was modeled in a single structure compared to a multi-layered structure, the warpage analysis results resulting from modeling the PCB structure would increase and there would be a significant difference. In addition, as the circuit layer of the PCB increased, the mechanical properties of the PCB, the elastic coefficient and inertia moment of the PCB increased, decreasing the package's warpage.

Design for a New Signals Analyzer through the Circuit Modeling Simulation under Severe Accident Conditions (중대사고 조건에서 회로 모델링 모의시험을 통한 새로운 신호분기의 설계)

  • Koo, Kil-Mo;Kim, Sang-Baik;Kim, Hee-Dong;Kang, Hee-Young;Kang, Hae-Yong
    • Proceedings of the IEEK Conference
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    • 2005.11a
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    • pp.171-174
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    • 2005
  • The circuit simulation analysis and diagnosis methods are used to instruments in detail when they give apparently abnormal readings. In this paper, a new simulator through an analysis of the important circuits modeling under severe accident conditions has been designed, the realization for a body work instead of the two sorts of the Labview & Pspice as an one order command in the Labview program. The program can be shown the output graph form the circuit modeling as an order commend. The procedure for the simulator design was divided into two design steps, of which the first step was the diagnosis methods, the second step was the circuit simulator for the signal processing tool. It has three main functions which are a signal processing tool, an accident management tool, and an additional guide from the initial screen.

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Study on the Dynamic Modeling of MCCB (배선용 차단기 개폐기구의 동특성 향상방안 및 해석)

  • Park, Jin-Young;Cho, Hea-Yong
    • Journal of Advanced Marine Engineering and Technology
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    • v.36 no.2
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    • pp.315-320
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    • 2012
  • Generally circuit devices of low voltage are as follows, ICCB, PCB and MCCB. Among them, MCCB is typically used because it has superior characteristics which fuses do not possess, such as safety, controllability and ability to collaborate with other devices. The MCCB plays vital role, it has to trip instantaneously when the fault is occurred as well as it must have high insulation capacity. Therefore in order to enhance the breaking capacity, the study of contact construction, contact tip and link are necessary. This paper shows dynamic modeling of mechanism part of MCCB using an exclusive analysis program, and embodies the research of improvement of mechanism performance.

EMTDC Modeling Method of DC Reactor type Superconducting Fault Current Limiter

  • Lee, Jaedeuk;Park, Minwon;Yu, In-Keun
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.56-59
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    • 2003
  • As electric power systems grow to supply the increasing electric power demand short-circuit current tends to increase and impose a severe burden on circuit breakers and power system apparatuses. Thus, all electric equipment in a power system has to he designed to withstand the mechanical and thermal stresses of potential short-circuit currents. Among current limiting devices, Fault Current Limiter (FCL) is expected to reduce the short-circuit current. Especially, Superconducting Fault Current Limiters (SFCL) offer ideal performance: in normal operation the SFCL is in its superconducting state and has negligible impedance, in the event of a fault, the transition into the normal conducting state passively limits the current. The SFCL using high-temperature superconductors offers a positive resolution to controlling fault-current levels on utility distribution and transmission networks. This study contributes to the EMTDC based modeling and simulation method of DC Reactor type SFCL. Single and three phase faults in the utility system with DC reactor type SFCLs have been simulated using EMTDC in order to coordinate with other equipments, and the results are discussed in detail.

Over-Temperature Protection Circuit Modeling Using MOSFET Rds(on) Temperature-Resistance Characteristics (MOSFET Rds(on) 온도-저항 특성을 이용한 과열보호회로 모델링)

  • Choi, Nak-Gwon;Lee, Sang-Hoon;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Kim, Nam-Kyun
    • Proceedings of the KIEE Conference
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    • 2005.07d
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    • pp.3019-3021
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    • 2005
  • In this paper we suggest a novel temperature detection method utilized in direct over-temperature protection circuit modeling. The suggested model detects temperature variation using Rds(on) characteristics of MOSFET, while the conventional methods are using extra devices such as a temperature sensor or an over-temperature detection transistor. The temperature-dependant MOSFET model is implemented using Spice ABM(Spice Analog Behavior Model). The direct over-temperature protection circuit was designed including it. We verified effectiveness of the temperature dependant Rds(on) model characteristics and performance of the direct over-temperature protection circuit on PSpice simulation

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Accurate modeling of small-signal equivalent circuit for heterojunction bipolar transistors (이종접합 바이폴라 트랜지스터에 관한 소신호 등가회로의 정확한 모델링)

  • 이성현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.156-161
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    • 1996
  • Accurate equivalent circuit modeling using multi-circuit optimization has been perfomred for detemining small-signal model of AlGaAs/GaAs HBTs. Three equivalent circuits for a cutoff biasing and two active biasing at different curretns are optimized simultaneously to fit gheir S parameters under the physics-based constrain that current-dependent elements for one of active circuits are connected to those for another circit multiplied by the ratio of two currents. The cutoff mode circuit and the physical constrain give the advantage of extracting physically acceptable parameters, because the number of unknown variables. After this optimization, three ses of optimized model S-parameters agree well with their measured S-parameters from 0.045 GHz to 26.5GHz.

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Characteristic Prediction and Analysis of 3-D Embedded Passive Devices (3차원 매립형 수동소자의 특성 예측 및 분석에 대한 연구)

  • Shin, Dong-Wook;Oh, Chang-Hoon;Lee, Kyu-Bok;Kim, Jong-Kyu;Yun, Il-Gu
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.607-610
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    • 2003
  • The characteristic prediction and analysis of 3-dimensional (3-D) solenoid-type embedded inductors is investigated. The four different structures of 3-D inductor are fabricated by using low-temperature cofired ceramic (LTCC) process. The circuit model parameters of the each building block are optimized and extracted using the partial element equivalent circuit method and HSPICE circuit simulator. Based on the model parameters, predictive modeling is applied for the structures composed of the combination of the modeled building blocks. And the characteristics of test structures, such as self-resonant frequency, inductance and Q-factor, are analyzed. This approach can provide the characteristic conception of 3-D solenoid embedded inductors for structural variations.

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Characteristic Variation of 3-D Solenoid Embedded Inductors for Wireless Communication Systems

  • Shin, Dong-Wook;Oh, Chang-Hoon;Kim, Kil-Han;Yun, Il-Gu
    • ETRI Journal
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    • v.28 no.3
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    • pp.347-354
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    • 2006
  • The characteristic variation of 3-dimensional (3-D) solenoid-type embedded inductors is investigated. Four different structures of a 3-D inductor are fabricated by using a low-temperature co-fired ceramic (LTCC) process, and their s-parameters are measured between 50 MHz and 5 GHz. The circuit model parameters of each building block are optimized and extracted using the partial element equivalent circuit method and an HSPICE circuit simulator. Based on the model parameters, the characteristics of the test structures such as self-resonant frequency, inductance, and quality (Q) factor are analyzed, and predictive modeling is applied to the structures composed of a combination of the modeled building blocks. In addition, characteristic variations of the 3-D inductors with different structures using extracted building blocks are also investigated. This approach can provide a characteristic estimation of 3-D solenoid embedded inductors for structural variations.

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Simplified d -q Equivalent Circuit of IPMSM Considering Inter-Turn Fault State (IPMSM의 선간단락고장에 따른 새로운 d -q 등가회로)

  • Kang, Bong-Gu;Hur, Jin
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.8
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    • pp.1355-1361
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    • 2016
  • The inter-turn fault (ITF) causes the negative sequence components in the d -q voltage equation due to an increase in the unbalance of three-phase input currents. For this reason, d -q voltage equation become complicate as the voltage equation is classified into positive and negative components. In this study, we propose a simplified d -q equivalent circuit of an interior permanent magnet synchronous motor under ITF state. First, we proposed modeling method for d -q current based on the finite element method simulation results. Then, we developed the simplified d -q equivalent circuit by applying the proposed d -q current modeling.