Accurate modeling of small-signal equivalent circuit for heterojunction bipolar transistors

이종접합 바이폴라 트랜지스터에 관한 소신호 등가회로의 정확한 모델링

Accurate equivalent circuit modeling using multi-circuit optimization has been perfomred for detemining small-signal model of AlGaAs/GaAs HBTs. Three equivalent circuits for a cutoff biasing and two active biasing at different curretns are optimized simultaneously to fit gheir S parameters under the physics-based constrain that current-dependent elements for one of active circuits are connected to those for another circit multiplied by the ratio of two currents. The cutoff mode circuit and the physical constrain give the advantage of extracting physically acceptable parameters, because the number of unknown variables. After this optimization, three ses of optimized model S-parameters agree well with their measured S-parameters from 0.045 GHz to 26.5GHz.