• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1627-1629
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• 1999

In order to analysis the degradation process of epoxy/glass fiber for outdoor condition, FRP laminate was exposed to high temperature and water. Then the degradation process was evaluated by comparing contact angle, surface potential decay, and surface resistivity. For the change of wettability, the contact angle of thermal-treated specimen with the high temperature of $200^{\circ}C$ increased. But that of water-treated specimen decreased. The characteristic of surface potential decay shows the tendency of the remarkable decrease on water-treated specimens, but no difference on thermal-treated specimen compared with untreated one. Also, for the surface resistivity, it shows the same trend compared with the change of contact angle.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.156.2-156.2
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• 2015

반도체 소자의 크기가 나노사이즈로 줄어들기 때문에, 건식식각의 중요성이 강조되고 있다. dual plasma source를 사용함으로써 plasma 밀도, 이온충돌에너지, 이온플럭스를 조절 가능하다. Low frequency로 이온에너지를 조절하고, high frequency로 이온플럭스를 일반적으로 조절한다. 본 연구는 inductively coupled plasma (ICP)와 capacitively coupled plasma (CCP)를 사용하는 dual plasma source이다. ICP는 AE RPS로 2.4 MHz를 사용하고, CCP는 AE RFX-600으로 13.56 MHz이다. single L-probe는 Hiden ESPion이고, quadrupole mass spectrometer (QMS)는 INFICON CPM-300이다. chuck에 CCP가 인가되고, ICP는 SUS mesh를 거쳐서 영향을 미친다. Gas는 Ar, Ar+CF4 두 조건에서 비료를 하였다. Single L-probe를 이용하여 플라즈마를 측정한 결과 CCP만 인가하였을 때, Te 2.05 eV, Ne 4.07E+10 #/cm3, Ni 5.82E+10 #/cm3의 결과를 얻을 수 있었다. ICP를 방전하고 mesh를 통해서 chuck으로 입사하는 이온을 측정한 결과 mesh에 의해 이온이 중성화되어 거의 입사하지 않음을 확인할 수 있었다. 최종적으로 이온의 영향이 상쇄되고, 라디칼의 영향이 증가하여 높은 etch rate와 선택비를 가지며, 등방성 식각의 영향이 커질 것으로 사료된다.

• 한국측량학회지
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• 제19권3호
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• pp.273-281
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• 2001

GSIS와 AHP법을 이용하여 삼척지역을 대상으로 산사태 발생 가능성을 분석하였다. 산사태를 유발하는 많은 인자들 중에서 경사도, 경사방향, 지질, 토양, 임상자료들은 기존의 지도자료를 이용하여 입력하여 데이터베이스를 구축하였다. 연구대상지역의 환경적ㆍ지리적 특성을 고려하여 산사태를 유발하는 인자를 결정하였으며, AHP법을 적용하여 유발인자들에 대한 입력값을 결정하였다. 산사태가 발생할 가능성이 있는 지역은 산사태 유발인자들로 만들어진 각각의 레이어를 중첩함으로써 작성되었다. 마지막으로 작성된 도면을 실제 산사태가 발생한 곳과 비교함으로써 산사태 유발인자들이 산사태 발생에 미치는 영향을 알아보았다. 그 결과 삼척지역에서는 토양과 지질적 요소가 가장 많은 영향을 미쳤다는 것을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.353-360
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• 2012

As semiconductor device technology continuously shrinks, low-open area etch process prevails in front-end etch process, such as contact etch as well as one cylindrical storage (OCS) etch. To eliminate over loaded wafer processing test, it is commonly performed to emply diced small coupons at stage of initiative process development. In nominal etch condition, etch responses of whole wafer test and coupon test may be regarded to provide similar results; however, optical emission spectroscopy (OES) which is frequently utilize to monitor etch chemistry inside the chamber cannot be regarded as the same, especially etch mask is not the same material with wafer chuck. In this experiment, we compared OES data acquired from two cases of etch experiments; one with coupon etch tests mounted on photoresist coated wafer and the other with coupons only on the chuck. We observed different behaviors of OES data from the two sets of experiment, and the analytical results showed that careful investigation should be taken place in OES study, especially in coupon size etch.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.67-73
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• 2017

Recently, macroporous ceramic materials with high electrical conductivity and mechanical strength are urgently needed for semiconductor and display manufacturing devices. In this work, we obtained electro-conducting macroporous aluminosilicate ceramics having surface resistivity of 108~1,010 ohm by dispersing electro-conducting carbon in ceramic matrix. By addition of 0.5~3.0 wt% frit glass, chemical bonding between grains was strengthened, and flexural strength was enhanced up to 160 MPa as a result. We evaluated the characteristics of present ceramics as vacuum chuck module for liquid crystal display display manufacturing devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.75-79
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• 2003

We studied InP etch results in high density planar inductively coupled $BCl_3$ and $BCl_3$/Ar plasmas. The investigated process parameters were ICP source power, RIE chuck power, chamber pressure and $BCl_3$/Ar gas composition. It was found that increase of ICP source power and RIE chuck power raised etch rate of InP, while that of chamber pressure decreased etch rate. Etched InP surface was clean and smooth (RMS roughness < 2 nm) with a moderate etch rate ($300\;{\sim}\;500\;{\AA}/min$) after the planar $BCl_3/Ar$ ICP etching. It may make it possible to open a new regime of InP etching with $CH_4/H_2$ - free plasma chemistry. Some amount of Ar addition (< 50%) also improved etch rates of InP, while too much Ar addition reduced etch rates of InP.

• 한국주거학회논문집
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• 제18권2호
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• pp.113-120
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• 2007

This study is to investigate the contents and status of documentary records based on "Hyogyeongdang Gyechukmun" related to the Old House of Papyeong Yun's family. This house is located in Goegok-dong, Daejeon Metropolitan city, and is considered as one of the high-class houses in the mid-Chosun dynasty. The results might be summarized as follows: First, Hyogyeongdang Gyechukmun was written by Yun Seom in 1675 (the 1st year of King Sukjong's reign), which is a kind of general drawing book containing a plane figure and a bird's-eye-view of the old house. It is an important historical record to identify the feature and characteristics of the high-class houses in those days. Second, Papyeong Yun's Old House was founded with five buildings including a shrine, women's quarters, Hyogyeongdang, servants' quarters, and a warehouse. On the southern front, there used to be a pond. Third, the standard measure used to build the old house was about 310.00/尺(chuck). Chuck(尺) is the measuring unit of the Chosun Dynasty.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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• pp.169-172
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• 2002

This study demonstrated the feasibility of using tape-casting followed by sintering as a low-cost alternative for coating glass-ceramic or glass film on a metal substrate. The process has been successfully used to fabricate a glass-on-stainless steel and a glass-ceramic-on-molybdenum electrostatic chuck(ESC) with the insulating layer thickness about $150{\mu}{\textrm}{m}$. Electrical resistivity data of the coaling were obtained between room temperature and 55$0^{\circ}C$; although the resistivity values dropped rapidly with increasing temperature in both coatings, the glass-ceramic still retained a high value of $10^{10}$ ohm-cm at $500^{\circ}C$. Clamping pressure measurements were done using a mechanical apparatus equipped with a load-cell at temperatures up to $350^{\circ}C$ and applied voltages up to 600V; the clamping behavior of all ESCs generally followed the voltage-squared curve as predicted by theory. Based on these results, we believe that we have a viable technology for manufacturing ESCs for use in reactive-ion etch systems.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.32-38
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• 2021

We developed an inductively coupled plasma (ICP) etcher for GaN etching using a parallel plasma electrode source with a multifunctional chuck matched to it in order for the low power consumption and low process cost in comparison with the conventional ICP system with a helical-type plasma electrode source. The optimization process condition using it for the micro light-emitting diode (µ-LED) chip fabrication was established, which is an ICP RF power of 300 W, a chuck power of 200 W, a BCl₃/Cl₂ gas ratio of 3:2. Under this condition, the mesa structure with the etch depth over 1 ㎛ and the etch angle over 75° and also with no etching residue was obtained for the µ-LED chip. The developed ICP showed the improved values on the process pressure, the etch selectivity, the etch depth uniformity, the etch angle profile and the substrate temperature uniformity in comparison with the commercial ICP. The µ-LED chip fabricated using the developed ICP showed the similar or improved characteristics in the L-I-V measurements compared with the one fabricated using the conventional ICP method

• 한국기계가공학회지
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• 제20권4호
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• pp.49-56
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• 2021

This paper describes the modeling and simulation of a four-axis dedicated robot that can attach and detach a workpiece on a computer numerical control (CNC) lathe. The robot was modeled as a Scarab robot for compatibility with CNC lathes. The advantages of such a robot are that an actuator with a small capacity can be used for the robot and the degrees of freedom of the robot can be reduced to four. For the simulation of the four-axis dedicated robot, a regular kinematic equation and an inverse kinematic equation were derived. Simulations were performed with these equations from the position of the loading device to the chuck position of the lathe before machining and from the chuck of the lathe to the position of the loading device after machining. The simulation results showed that the four-axis dedicated robot could be operated accurately, and they provided the joint angle of each motor (θ1, θ2, and θ3).