• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2110-2115
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• 2008

In this study, We disigned and manufactured the Hot Chuck which can be operated until $120^{\circ}C$. Its shape is circular, wide is 300mm and depth is 15mm. Two types working fluid was used as working fluid(distilled water, 0.1%-$TiO_2$ nanofluid). The experimental results were compared to each working fluid. The effect of various working fluid, charging volume ratio was investigated. Also we investigated heat transfer rate against each working fluid. By using nanofluid, heat transfer rate can be enhanced and the wick structure can be constructed automatically on smooth surface. The experiment of 40% charged 0.1%-$TiO_2$ nanofluid showed the best performance of thermal accuracy and uniformity. To improve performance of Hot Chuck, more study is needed.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.9
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• pp.96-102
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• 2009

In this study, performs analysis of the life of parallel opening type pneumatic chucks that are usually applied in the factory automation line. Pneumatic chucks have complicated failure cause because they are organized as a complex of various elements. Therefore, we analyzed the main failure mode of pneumatic chuck, and then performed life test and performance test according to the international standards. On the basis of these processes, shape parameter of pneumatic chuk is proposed that is the main factor for the calculation of zero failure test time for the reliability of pneumatic chuck and their data analysis of life distribution.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Korean Journal of Oriental Medicine
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• v.13 no.3
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• pp.111-117
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• 2007

The study aims to measure and analyze the thickness and depth of blood vessel on the pulse diagnosis locations and the blood velocity through the use of ultrasonic waves (LOGIQ5PRO, GE Medical, U.S.) in order to understand the structural difference of pulse diagnosis locations. The subjects included 44 healthy men and women(22.28${\pm}$2.62 age) considered normal in terms of Body Mass Index(BMI). The thickness and depth of the blood vessel and the blood velocity were measured three times on CHON, KWAN and CHUCK to obtain the average value. Results showed there is a statistically significant difference among the variables measured on CHON, KWAN and CHUCK. A difference according to gender was also observed. This explains why an oriental medical doctor can tell the difference in pulses depending on the location of CHON, KWAN and CHUCK. In addition, the difference in pressure between CHON and KWAN was higher than that in pressure between KWAN and CHUCK. The findings explain why oriental medical doctors take pulses by dividing CHON, KWAN and CHUCK in the short length of the three fingers. It can be used to develop a pulse diagnosis device enabling accurate measurement according to the characteristics of blood vessel structure based on where the pulse is taken. Furthermore, the results can be used as basic data for the development of a pulse diagnosis simulator.

• Elastomers and Composites
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• v.50 no.1
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• pp.55-61
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• 2015

Manufacturing process of OLED contains adsorption-desorption process of glass substrate. There are several adsorption methods of glass substrate such as atmospheric pressure, vacuum and electrostatic adsorption. However, these methods are very complex to connect system. Therefore, the adsorption method using silicone rubber based sticking chuck was proposed in this study. Three types of silicone rubbers having 0, 19.3 and 32.2 wt% of fluorine were used and their mechanical properties, surface energies and adsorption properties were examined. According to the results ${\sigma}_{300}$ and hardness increased with increasing fluorine contents, but elongation was decreased. Also, fluorosilicone rubber containing 32.2 wt% of fluorine showed the lowest surface tension, among three types of rubber and resulted in the highest initial tack with glass substrate. After the adsorption-desorption test of 300,000 cycles was performed, the adsorption force of S-1 (silicone rubber) decreased largely from 2.34 to 0.73 MPa. However, the S-3 (fluorosilicone rubber having 32.2 wt%. of fluorine) decreased only from 3.15 to 2.24 MPa. From this study, we obtained the valuable equations related to long term durability of silicone based sticking chuck. Finally the transfer of silicone rubber to glass substrate with the adsorption-desorption process was not occurred and this phenomenon was examined by UV-Visible spectroscopy.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.10 s.253
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• pp.957-965
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• 2006

A high-performance hot chuck is designed as a heating device for an ultra-precision flip-chip bonder with infrared alignment system. Analysis of design requirements for thermal performance leads to a radiative heating mechanism employing two halogen lamps as heating source. The heating tool is made of silicon carbide characterized by high thermal diffusivity and small thermal expansion coefficient. Experimental tests are performed to assess heat-up performance and temperature uniformity of the heating tool. It is revealed that the initial design of hot chuck results in a good heat-up speed but there exist a couple of troubles associated with control and integrity of the device. As a means to resolve the raised issues, a revised version of heating tool is proposed, which consists of a working plate made of silicon carbide and a supporting structure made of stainless steel. The advantages of this two-body heating tool are discussed and the improved features are verified experimentally.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.6 s.171
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• pp.144-151
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• 2005

Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.1
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• pp.10-15
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• 2005

Effects of CH₄/H₂ flow rate ratio, chuck bias and microwave power on the structural properties and particle densities of diamond thin films deposited on Ti substrates in microwave plasma CVD were examined. High quality diamond thin films were deposited on Ti substrates in 2∼3 CH₄ Vol.% conditions due to the preferential formation of sp³-bonus ana selective removal of sp²-bonus in the CH₄/H₂ mixtures, and the mechanism for the formation of diamond particles on Ti was analysed. Diamond particle density increased with increasing negative chuck bias to Ti substrate due to bias-enhanced nucleation of diamond and the threshold voltage was found at ∼-50 V. With increasing microwave power the evolution from micro-crystalline graphite layer to diamond layer was observed.

• Korean Journal of Human Ecology
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• v.16 no.3
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• pp.623-630
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• 2007

The remarkable fact regarding the History of Chosun Dynasty(from Jungjong- Youngjo) is that any slightest evidence can't be found that Pobeckchuck was used to measure clothes or various Pobecks. There remains the document that in the 22nd years of Myeonjong, Japan required that Pobeckchuck be used, but it couldn't be allowed because of the reason it was made in the former king. This fact raises the high possibility that Pobeckchuck could be the most trustworthy standardized ruler at that time, and in other point of view, it can be presumed that the measurement in the period of King Sejong continued to have been used until this time. It can be seen that the length of one Chuck of Pobeckchuck at this time must have been equivalent to 46. 73cm of Pobeckchuck of Samchuck in the period of Sejong. In the History of Sunjo Period, many records on Pobeckchuck can be found, which fact seemed to have rectified the measurement system which was disordered by military revolt, though the reason is not clear. Also a record can be found that in the period of Sunjo, Chinese envoy required the Sunjo Regime to use Pobeckchuck for the measurement of copper pillar, which record supports the fact that Pobeckchuck is the standardized ruler. Another record that in the 26th period of Youngjo, Pobeckchuck of Samchuck was corrected according to the Kyeongkukdaejeon shows that the length of Pobeckchuck was 46.80cm at that time. Also, the record which rectified many rulers with the comparison of Hwangjong-chuck, Ju-chuck, Joryeki-chuck, Yongjo-chuck, etc. with one another reveals that the rulers used in the period of Sejong continued to have been used unchanged until in the period of Youngjo.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.