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Parametric study of diamond/Ti thin film deposition in microwave plasma CVD  

Cho Hyun (Department of Materials Engineering, Miryang National University)
Kim Jin Kon (Department of Materials Engineering, Miryang National University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.15, no.1, 2005 , pp. 10-15 More about this Journal
Abstract
Effects of CH₄/H₂ flow rate ratio, chuck bias and microwave power on the structural properties and particle densities of diamond thin films deposited on Ti substrates in microwave plasma CVD were examined. High quality diamond thin films were deposited on Ti substrates in 2∼3 CH₄ Vol.% conditions due to the preferential formation of sp³-bonus ana selective removal of sp²-bonus in the CH₄/H₂ mixtures, and the mechanism for the formation of diamond particles on Ti was analysed. Diamond particle density increased with increasing negative chuck bias to Ti substrate due to bias-enhanced nucleation of diamond and the threshold voltage was found at ∼-50 V. With increasing microwave power the evolution from micro-crystalline graphite layer to diamond layer was observed.
Keywords
Diamond/Ti thin film; Microwave plasma CVD; CH₄/H₂ flow rate ratio; Negative chuck bias; Microwave power; sp³-/sp²-bonded carbon neutral ratio; Micro-crystalline graphite;
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