Browse > Article

Dynamic Characteristic Evaluation of Spin Coater Module for GaAs Wafer Bonding  

Song Jun Yeob (한국기계연구원 지능형정밀기계연구부)
Kim Ok Koo (한국기계연구원 지능형정밀기계연구부)
Kang Jae Hoon (한국기계연구원 지능형정밀기계연구부)
Publication Information
Journal of the Korean Society for Precision Engineering / v.22, no.6, 2005 , pp. 144-151 More about this Journal
Abstract
Spin coater is regarded as a major module rotating at high speed to be used build up polymer resin thin film layer fur bonding process of GaAs wafer. This module is consisted of spin unit for spreading uniformly, align device, resin spreading nozzle and et. al. Specially, spin unit which is a component of module can cause to vibrate and finally affect to the uniformity of polymer resin film layer. For the stability prediction of rotation velocity and uniformity of polymer resin film layer, it is very important to understand the dynamic characteristics of assembled spin coater module and the dynamic response mode resulted from rotation behavior of spin chuck. In this paper, stress concentration mode and the deformed shape of spin chuck generated due to angular acceleration process are presented using analytical method for evaluation of structural safety according to the revolution speed variation of spin unit. And also, deformation form of GaAs wafer due to dynamic behavior of spin chuck is presented fur the comparison of former simulated results.
Keywords
Compound semiconductor; GaAs; Wafer; Coater module; Polymer resin; Spin chuck; Dynamic characteristic;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
연도 인용수 순위
1 Ji, W. H., Song, J. Y., 'Optimum design of bonding module of GaAs wafer,' Proc. of KSPE, pp. 860-863, 2003   과학기술학회마을
2 Song, J. Y., Kim, O. K., 'Characteristic analysis of spin coater for GaAs wafer bonding system,' Proc. of KSPE, pp. 476-479, 2003
3 Kim, O. K., Song. J. Y., 'Dynamic characteristic evaluation of spin coater for GaAs bonding system,' Proc. of KSPE, pp. 720-723, 2004
4 Takamori, T., Wada, S., Kamijoh, T., 'GaAs side-by-side wafer bonding and formation of lateral pn junction,' Applied surface Science, Vol.117, Elsevier, pp. 798-807, 1997   DOI   ScienceOn
5 Chung, T. R., Yang, L., 'Room temperature GaAs-Si and InP-Si wafer direct binding by the surface activated bonding method,' NIMB, Research B 121, Elsevier, pp. 203-206, 1997   DOI
6 Arokiaraj, J., Soga, T., '$SeS_2$ assisted bonding of GaAs to Si-lA new method for wafer bonding,' Applied surface Science, Vol.159, Elsevier, pp. 282-287, 2000   DOI   ScienceOn
7 Chung, T. R., Yang, L., 'Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bondig method,' Applied surface Science, Vol.117, Elsevier, pp. 808-812, 1997   DOI   ScienceOn
8 Kopperschmidt, P., Senz, S., Scholz, R., 'Interface degects in integrated hybrid semiconductors by wafer,' Physica B, Vo1.308, Elsevier, pp. 1205-1208, 2001   DOI
9 Birnie, D. P., , Vogt, R. N., 'Coating uniformity and device applicability of spin coated sol-gel PZT films,' Microelectronic Engineering, Vol.29, pp. 189-192, 1995   DOI   ScienceOn