• 제목/요약/키워드: Chip Load Area

검색결과 42건 처리시간 0.038초

온칩된 커패시터 채배기법 적용 보상회로를 갖는 DC to DC 벅 변환기 설계 (Design of a Step-Down DC-DC converter with On-chip Capacitor multiplyed Compensation circuit)

  • 박승찬;임동균;윤광섭
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2008년도 하계종합학술대회
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    • pp.537-538
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    • 2008
  • A step-down DC-DC converter with On-chip Compensation for battery-operated portable electronic devices which are designed in 0.18um CMOS standard process. In an effort to improve low load efficiency, this paper proposes the PFM (Pulse Frequency modulation) voltage mode 1MHz switching frequency step-down DC-DC converter with on-chip compensation. Capacitor multiplier method can minimize error amplifier compensation block size by 20%. It allows the compensation block of DC-DC converter be easily integrated on a chip and occupy less layout area. But capacitor multiplier operation reduces DC-DC converter efficiency. As a result, this converter shows maximum efficiency over 87% for the output voltage of 1.8V (input voltage : 3.3V), maximum load current 500mA, and 0.14% output ripple voltage. The total core chip area is $mm^2$.

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전류모드 PWM/PFM DC-DC Boost 변환기 설계 (A Design of Current Mode PWM/PFM DC-DC Boost Converter)

  • 황인호;유성목;박종태;유종근
    • 한국정보통신학회:학술대회논문집
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    • 한국해양정보통신학회 2011년도 추계학술대회
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    • pp.404-407
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    • 2011
  • 본 논문은 전류모드에서 동작하는 PWM/PFM DC-DC Boost 변환기의 설계를 하였다. 부하전류가 클 때는 PWM으로 동작하고, 부하 전류가 작을 때는 PFM으로 동작함으로써 높은 효율을 유지할 수 있게 설계하였다. DC-DC Boost 변환기는 $0.35{\mu}m$ 공정으로 설계되었으며, 500KHz의 주파수에 동작하고, 최대 효율은 92.1%이다. 그리고 부하 전류가 최대 600mA까지 구동 할 수 있다. 전체 칩의 크기는 패드를 포함하여 $1300{\mu}m{\times}1070{\mu}m$이다. 따라서 작은 칩 면적으로 넓은 부하전류를 구동할 수 있는 DC-DC Boost 변환기를 설계하였다.

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Real-time Ray-tracing Chip Architecture

  • Yoon, Hyung-Min;Lee, Byoung-Ok;Cheong, Cheol-Ho;Hur, Jin-Suk;Kim, Sang-Gon;Chung, Woo-Nam;Lee, Yong-Ho;Park, Woo-Chan
    • IEIE Transactions on Smart Processing and Computing
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    • 제4권2호
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    • pp.65-70
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    • 2015
  • In this paper, we describe the world's first real-time ray-tracing chip architecture. Ray-tracing technology generates high-quality 3D graphics images better than current rasterization technology by providing four essential light effects: shadow, reflection, refraction and transmission. The real-time ray-tracing chip named RayChip includes a real-time ray-tracing graphics processing unit and an accelerating tree-building unit. An ARM Ltd. central processing unit (CPU) and other peripherals are also included to support all processes of 3D graphics applications. Using the accelerating tree-building unit named RayTree to minimize the CPU load, the chip uses a low-end CPU and decreases both silicon area and power consumption. The evaluation results with RayChip show appropriate performance to support real-time ray tracing in high-definition (HD) resolution, while the rendered images are scaled to full HD resolution. The chip also integrates the Linux operating system and the familiar OpenGL for Embedded Systems application programming interface for easy application development.

Dickson Charge Pump with Gate Drive Enhancement and Area Saving

  • Lin, Hesheng;Chan, Wing Chun;Lee, Wai Kwong;Chen, Zhirong;Zhang, Min
    • Journal of Power Electronics
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    • 제16권3호
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    • pp.1209-1217
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    • 2016
  • This paper presents a novel charge pump scheme that combines the advantages of Fibonacci and Dickson charge pumps to obtain 30 V voltage for display driver integrated circuit application. This design only requires four external capacitors, which is suitable for a small-package application, such as smart card displays. High-amplitude (<6.6 V) clocks are produced to enhance the gate drive of a Dickson charge pump and improve the system's current drivability by using a voltage-doubler charge pump with a pulse skip regulator. This regulation engages many middle-voltage devices, and approximately 30% of chip size is saved. Further optimization of flying capacitors tends to decrease the total chip size by 2.1%. A precise and simple model for a one-stage Fibonacci charge pump with current load is also proposed for further efficiency optimization. In a practical design, its voltage error is within 0.12% for 1 mA of current load, and it maintains a 2.83% error even for 10 mA of current load. This charge pump is fabricated through a 0.11 μm 1.5 V/6 V/32 V process, and two regulators, namely, a pulse skip one and a linear one, are operated to maintain the output of the charge pump at 30 V. The performances of the two regulators in terms of ripple, efficiency, line regulation, and load regulation are investigated.

패킷 방식의 DRAM에 적용하기 위한 새로운 강조 구동회로 (A New Pre-Emphasis Driver Circuit for a Packet-Based DRAM)

  • 김준배;권오경
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권4호
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    • pp.176-181
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    • 2001
  • As the data rate between chip-to-chip gets high, the skin effect and load of pins deteriorate noise margin. With these, noise disturbances on the bus channel make it difficult for receiver circuits to read the data signal. This paper has proposed a new pre-emphasis driver circuit which achieves wide noise margin by enlarging the signal voltage range during data transition. When data is transferred from a memory chip to a controller, the output boltage of the driver circuit reaches the final values through the intermediate voltage level. The proposed driver supplies more currents applicable to a packet-based memory system, because it needs no additional control signal and realizes very small area. The circuit has been designed in a 0.18 ${\mu}m$ CMOS process, and HSPICE simulation results have shown that the data rate of 1.32 Gbps be achieved. Due to its result, the proposed driver can achieved higher speed than conventional driver by 10%.

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위치 기반의 우선순위를 이용한 네트워크 온 칩에서의 디플렉션 라우팅 (A Deflection Routing using Location Based Priority in Network-on-Chip)

  • 남문식;한태희
    • 전자공학회논문지
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    • 제50권11호
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    • pp.108-116
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    • 2013
  • 네트워크 온 칩(Network on Chip)의 라우터에서 사용되는 입력버퍼는 온 칩 네트워크 플로우 컨트롤 및 가상채널 구성을 통해 네트워크의 성능을 좌우하는 중요한 요소이다. 하지만 네트워크 크기 증가에 따른 입력버퍼의 면적 및 전력 소모 증가 문제가 심화됨에 따라 입력버퍼를 제거한 버퍼리스 디플렉션(Bufferless Deflection) 라우팅 기법이 등장하였다. 그러나 버퍼리스 디플렉션 라우터는 통신량이 많은 네트워크에서 성능이 급격히 감소하기 때문에 이를 해결하기 위해 소량의 사이드 버퍼(side buffer)와 디플렉션 라우팅 기법을 결합하는 연구들이 등장하였다. 이러한 기법들은 전송시간 등에 의한 단순 우선순위에 따라 출력 포트에 할당할 데이터를 결정하는 방식을 사용함으로 인해 출력포트에서의 패킷 충돌이 빈번해져 네트워크의 성능을 제한한다. 본 논문에서는 데이터의 위치 정보를 이용한 변형된 디플렉션 라우팅 기법을 제안하고 이에 부합하는 라우터 구조를 제시하였다. 모의실험 결과 제안한 방식은 기존의 사이드 버퍼를 사용하는 디플렉션 라우터에 비해 3%의 면적이 증가하지만 처리량이 12% 향상되었다.

온칩 시동회로를 갖는 CMOS DC-DC 벅 변환기 설계 (Design of monolithic DC-DC Buck converter with on chip soft-start circuit)

  • 박승찬;임동균;이상민;윤광섭
    • 한국통신학회논문지
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    • 제34권7A호
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    • pp.568-573
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    • 2009
  • 본 논문에서 0.13um CMOS 공정으로 설계된 배터리 기반 휴대용 통신 시스템 구동용의 온칩 시동회로를 갖는 스텝다운 CMOS DC-DC 변환기를 제안하였다. 1MHz의 스위칭 주파수를 기반으로 설계된 벅 변환기에는 온칩 시동회로와 커패시터 멀티플라이어 기법을 이용한 보상회로를 포함시켰다. 칩 측정 결과 2.5V ${\sim}$3.3V의 입력 전압을 1.2V로 강압시키는데 최대 87.2%의 효율을 갖는다. 최대 부하 전류, 출력 전류 리플 및 전압 리플은 각각 500mA, 25mA, 24mV 이다.

COG(Chip On Glass)를 위한 ACA (Anisotropic Conductive Adhesives) 공정 조건에 관한 연구 (A Study on the Process Conditions of ACA( Anisotropic Conductance Adhesives) for COG ( Chip On Glass))

  • 한정인
    • 한국재료학회지
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    • 제5권8호
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    • pp.929-935
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    • 1995
  • 구동 IC를 유리기판 위의 Al패드 전극에 연결하는 LCD(Liquid Crystal Display) 모듈을 실장하는 Chip On Glass (COG) 기술을 개발하기 위하여 기존에 잘 알려진 기술 가운데 실제로 적용 가능성이 가장 유망한 이방성 도전 접착제 (ACA, Anisotropic Conductive Adhesives)를 사용한 공정에 대하여 조사하였다. ACA 공정은 본딩 부분에 ACA 수지를 균일하게 분포시키는 공정과 자외선을 조사하여 수지를 경화하여 칩을 실장하는 공정의 2단계로 진행하였다. 칩에 가해준 하중은 2-15kg이었고 칩의 예열 온도는 12$0^{\circ}C$이었다. 이방성 도전체는 Au 또는 Ni이 표면 피막 재료로 사용된 것을 사웅하였으며 전도성 입자의 갯수가 500, 1000, 2000, 4000개/$\textrm{mm}^2$이며 크기가 5, 7, 12$\mu\textrm{m}$이었다. ACA 처리의 결과 입자 크기가 5$\mu\textrm{m}$이고 입자 밀도는 4000개/$\textrm{mm}^2$일 경우가 대단히 낮은 접촉 저항 및 가장 안정된 본딩 특성을 나타냈었다.

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A High-Linearity Low-Noise Reconfiguration-Based Programmable Gain Amplifier

  • Han, Seok-Kyun;Nguyen, Huy-Hieu;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제13권4호
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    • pp.318-330
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    • 2013
  • This paper presents a high-linearity low-noise small-size programmable gain amplifier (PGA) based on a new low-noise low-distortion differential amplifier and a proposed reconfiguration technique. The proposed differential amplifier combines an inverter-based differential pair with an adaptive biasing circuit to reduce noise and distortion. The reconfiguration technique saves the chip size by half by utilizing the same differential pair for the input transconductance and load-stage, interchangeably. Fabricated in $0.18-{\mu}m$ CMOS, the proposed PGA shows a dB-linear control range of 21dB in 16 steps from -11 dB to 10 dB with a gain error of less than ${\pm}0.33$ dB, an IIP3 of 7.4~14.5 dBm, a P1dB of -7~1.2 dBm, a noise figure of 13dB, and a 3-dB bandwidth of 270MHz at the maximum gain, respectively. The PGA occupies a chip area of $0.04mm^2$ and consumes only 1.3 mA from the 1.8 V supply.

SiC Based Single Chip Programmable AC to DC Power Converter

  • Pratap, Rajendra;Agarwal, Vineeta;Ravindra, Kumar Singh
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권6호
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    • pp.697-705
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    • 2014
  • A single chip Programmable AC to DC Power Converter, consisting of wide band gap SiC MOSFET and SiC diodes, has been proposed which converts high frequency ac voltage to a conditioned dc output voltage at user defined given power level. The converter has high conversion efficiency because of negligible reverse recovery current in SiC diode and SiC MOSFET. High frequency operation reduces the need of bigger size inductor. Lead inductors are enough to maintain current continuity. A complete electrical analysis, die area estimation and thermal analysis of the converter has been presented. It has been found that settling time and peak overshoot voltage across the device has reduced significantly when SiC devices are used with respect to Si devices. Reduction in peak overshoot also increases the converter efficiency. The total package substrate dimension of the converter circuit is only $5mm{\times}5mm$. Thermal analysis performed in the paper shows that these devices would be very useful for use as miniaturized power converters for load currents of up to 5-7 amp, keeping the package thermal conductivity limitation in mind. The converter is ideal for voltage requirements for sub-5 V level power supplies for high temperatures and space electronics systems.