• 제목/요약/키워드: Cheongju-si

검색결과 201건 처리시간 0.021초

동씨침법(董氏鍼法)이 요각통(腰脚痛) 환자(患者)의 족지신근력(足趾伸筋力)에 미치는 영향(影響)에 대한 임상적(臨床的) 고찰(考察) (A Clinical Study on the Effects of Dorsiflexion of Foot & Great Toe of Dong-Si Acupuncture Therapy for the Patients With Lumbago)

  • 양기영;김영화;임윤경;이현;이병렬
    • Journal of Acupuncture Research
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    • 제19권4호
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    • pp.49-55
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    • 2002
  • Objective : The purpose of this study is to find out the effects of Dorsiflexion of foot & great toe of Dong-si acupuncture therapy for the patients with lumbago. Methods : A retrospective study has been carried out for 20 cases of lumbago patients who visited Cheongju Oriental Medical Hospital from January 1, 2002 to June 30, 2002. We have treated tem with acupuncture treatment of Dong-si acupuncture points(Yeong-gol and Dae-baek) and taken measurements with a Hand Grip Meter. Results : 1. There was no siginificance difference between the average values of the whole group and each groups divided by age before and after Dong-si acupuncture therapy. 2. The correlation of measured values before and after Dong-si acupuncture therapy was as much as 0.849, which suggests that the patients with higher value before the therapy also had higher value after the therapy. 3. The average value after Dong-si acupuncture therapy was higher than the average value before the therapy by $1.9625{\pm}.8440$, which suggests the therapeutic significance. Conclusion : The Dong-si acupuncture therapy is effective therapy of Dorsiflexion of foot & great toe.

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Charge Trapping Mechanism in Amorphous Si-In-Zn-O Thin-Film Transistors During Positive Bias Stress

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제17권6호
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    • pp.380-382
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    • 2016
  • The mechanism for instability under PBS (positive bias stress) in amorphous SIZO (Si-In-Zn-O) thin-film transistors was investigated by analyzing the charge trapping mechanism. It was found that the bulk traps in the SIZO channel layer and the channel/dielectric interfacial traps are not created during the PBS duration. This result suggests that charge trapping in gate dielectric, and/or in oxide semiconductor bulk, and/or at the channel/dielectric interface is a more dominant mechanism than the creation of defects in the SIZO-TFTs.

Low Emissivity Property of Amorphous Oxide Multilayer (SIZO/Ag/SIZO) Structure

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.13-15
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    • 2017
  • Low emissivity glass for high transparency in the visible range and low emissivity in the IR (infrared) range was fabricated and investigated. The multilayers were have been fabricated, and consisted of two outer oxide layers and a middle layer of Ag as a metal layer. Oxide layers were formed by rf sputtering and metal layers were formed using by an evaporator at room temperature. SiInZnO (SIZO) film was used as an oxide layer. The OMO (oxide-metaloxide) structures of SIZO/Ag/SIZO were analyzed by using transmittance, AFM (atomic force microscopye), and XRD (X-ray diffraction). The OMO multilayer structure was designed to investigate the effect of Ag layer thickness on the optical property of the OMO structure.

공정 압력에 따라 제작되어진 비인듐계 SiZnSnO 박막을 이용한 박막트랜지스터의 성능 연구 (Pressure Dependency of Electrical Properties of In-free SiZnSnO Thin Film Transistors)

  • 이상렬
    • 한국전기전자재료학회논문지
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    • 제25권8호
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    • pp.580-583
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    • 2012
  • The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

등방성 에칭과 이방성 에칭이 태양전지 셀의 전기적인 특성에 미치는 효과 (Variation of Electric Properties Depending on Isotropic and Anisotropic Texturing of Solar Cell)

  • 오데레사
    • 반도체디스플레이기술학회지
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    • 제10권4호
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    • pp.31-35
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    • 2011
  • For high efficiency of Si-cells, Si wafers were textured by the KOH and NaOH etching solution to decreas the reflectance at surfaces of the cells. The textured surfaces were shown various types such as isotropic and anisotropic depending on the etching solution. The reflectance at sample of an anisotropic form with pyramid type was lower than that of isotropic form. The surface with isotropic form of general tiny circles on the surface increased the efficiency, however, the reflectance of it was increased. The efficiency was increased on surface with low roughness.

극히 얕은 $N^+$-P 실리콘 접합에서의 어발런치 현상 (Avalanche Phenomenon at The Ultra Shallow $N^+$-P Silicon Junctions)

  • 이정용
    • 반도체디스플레이기술학회지
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    • 제6권3호
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    • pp.47-53
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    • 2007
  • Ultra thin Si p-n junctions shallower than $300{\AA}$ were fabricated and biased to the avalanche regime. The ultra thin junctions were fabricated to be parallel to the surface and exposed to the surface without $SiO_2$ layer. Those junctions emitted white light and electrons when junctions were biased in the avalanche breakdown regime. Therefore, we could observe the avalanche breakdown region visually. We could also observe the influence of electric field to the current flow visually by observing the white light which correspond to the avalanche breakdown region. Arrayed diodes emit light and electrons uniformly at the diode area. But, the reverse leakage current were larger than those of ordinary diodes, and the breakdown voltage were less than 10V.

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New record of three hypotrich soil ciliates(Ciliophora: Hypotricha) from South Korea: Oxytricha multilineata, Mixophrya pantanalensis pantanalensis and Caudiurostyla sinensis

  • Kyu-Seok Chae;Gi-Sik Min
    • Journal of Species Research
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    • 제12권4호
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    • pp.307-312
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    • 2023
  • Oxytricha multilineata, Mixophrya pantanalensis pantanalensis, and Caudiurostyla sinensis were isolated from soil samples collected from Cheongju-si and Yeoju-si, confirmed as new to South Korea. Oxytricha multilineata was distinguished from other congeners by seven dorsal kineties and dorsal bristles about 15 ㎛ long. Mixophrya pantanalensis pantanalensis was characterized by five to seven lithosomes and six dorsal kineties. Caudiurostyla sinensis was characterized by colorless cortical granules present, 10-14 midventral pairs, 7-9 left and 6-9 right marginal rows and four or five dorsal kineties. We determined the ribosomal DNA sequences (including 18S rDNA, ITS1, 5.8S rDNA, ITS2, and partial 28S rDNA) from above three species. And the genetic distances were compared with their congeners.

Effect of Annealing Temperature on the Electrical Performance of SiZnSnO Thin Film Transistors Fabricated by Radio Frequency Magnetron Sputtering

  • Kim, Byoungkeun;Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
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    • 제18권1호
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    • pp.55-57
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    • 2017
  • Amorphous oxide thin film transistors (TFTs) were fabricated with 0.5 wt% silicon doped zinc tin oxide (a-0.5SZTO) thin film deposited by radio frequency (RF) magnetron sputtering. In order to investigate the effect of annealing treatment on the electrical properties of TFTs, a-0.5SZTO thin films were annealed at three different temperatures ($300^{\circ}C$, $500^{\circ}C$, and $700^{\circ}C$ for 2 hours in a air atmosphere. The structural and electrical properties of a-0.5SZTO TFTs were measured using X-ray diffraction and a semiconductor analyzer. As annealing temperature increased from $300^{\circ}C$ to $500^{\circ}C$, no peak was observed. This provided crystalline properties indicating that the amorphous phase was observed up to $500^{\circ}C$. The electrical properties of a-0.5SZTO TFTs, such as the field effect mobility (${\mu}_{FE}$) of $24.31cm^2/Vs$, on current ($I_{ON}$) of $2.38{\times}10^{-4}A$, and subthreshold swing (S.S) of 0.59 V/decade improved with the thermal annealing treatment. This improvement was mainly due to the increased carrier concentration and decreased structural defects by rearranged atoms. However, when a-0.5SZTO TFTs were annealed at $700^{\circ}C$, a crystalline peak was observed. As a result, electrical properties degraded. ${\mu}_{FE}$ was $0.06cm^2/Vs$, $I_{ON}$ was $5.27{\times}10^{-7}A$, and S.S was 2.09 V/decade. This degradation of electrical properties was mainly due to increased interfacial and bulk trap densities of forming grain boundaries caused by the annealing treatment.

국내자생 느티나무 6개집단의 형태적 특징과 변이조사 (Analysis of Morphological Characteristics and Variation among Six Populations of Zelkova serrata Makino in Korea)

  • 남재익;최고은;최명길;박재인
    • 한국자원식물학회지
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    • 제26권5호
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    • pp.557-565
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    • 2013
  • 국내에 분포하는 느티나무의 표현형의 변이를 확인하기 위하여 자생지 6곳을 대상으로 35가지 형태적 특징을 조사하였다. 분산분석 수행결과 20가지 정량적형질 중 16가지 형질이 집단간에 유의한 차이를 나타내는 것으로 확인되었다. 특히, '청주시 것대산' 집단이 20가지 정량적형질 중 9가지에서 최대값을 나타내었다. 주성분 분석 결과 측정항목들이 집단 간 차이를 나타내는데 적절하지 못함이 확인되었다. 군집분석을 수행한 결과 '남해군 미조리상록수림' 집단과 '양평군 용문산' 집단이 가장 가까운 그룹을 이루었으며, '청주시 것대산' 집단, '보은군 속리산' 집단, '대구광역시 팔공산' 집단, '함양군 상림' 집단 순으로 군집되었다.

도시재생사업에서 주민참여활동이 지속적 참여 동기에 미치는 영향 분석: 청주시 사직2동을 중심으로 (Analysis of the Impact of Residents Participation Activities on Continued Motivation in an Urban Regeneration Project: Focused on Sajik-dong, Cheongju-si)

  • 성순아;오후;황희연
    • 대한지리학회지
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    • 제50권4호
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    • pp.393-406
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    • 2015
  • 본 연구는 주민 참여형 도시재생사업을 진행한 청주시 사직2동을 중심으로 주민들의 지속적 참여를 위한 참여 동기에 영향을 미치는 주민참여활동을 살펴보았다. 분석에 앞서 주민참여활동과 참여 동기의 구성요소를 선정해 도시재생사업에 참여했던 주민을 대상으로 설문조사를 실시하였으며, 이를 바탕으로 주민인식을 살펴보고 위계적 회귀분석을 통해 참여 동기에 영향을 미치는 주민참여활동을 분석하였다. 연구 결과, 사업 참여 활동 요인과 일상 활동 요인 모두 보상이라는 참여 동기에 영향을 미치지 않는 반면, 성취감이라는 참여 동기에는 사업 참여 활동 요인의 하위요인인 사업추진 및 관리활동과 일상만남활동이 영향을 주는 것으로 나타났다. 마지막으로 기대감이라는 참여 동기에는 일상 활동 요인의 하위요인인 일상만남활동만이 영향을 미치는 것으로 나타났다. 본 연구결과는 주민들의 지속적 참여를 유도하는 참여 동기를 부여하기 위해 중점적으로 운영하여야 할 주민참여활동을 알아볼 수 있는 기초가 된다.

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