한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제25권8호
  • /
  • Pages.580-583
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  • 2012
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  • 1226-7945(pISSN)
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  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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공정 압력에 따라 제작되어진 비인듐계 SiZnSnO 박막을 이용한 박막트랜지스터의 성능 연구

Pressure Dependency of Electrical Properties of In-free SiZnSnO Thin Film Transistors

  • 이상렬 (청주대학교 반도체공학과)
  • Lee, Sang-Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2012.05.08
  • 심사 : 2012.07.13
  • 발행 : 2012.08.01
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초록

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

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참고문헌

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