• The Korean Journal of Ceramics
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• 제3권3호
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• pp.159-162
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• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 추계학술대회 논문집 학회본부
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• pp.243-245
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• 1994

We synthesized the conducting diamond-like carbon films using plasma-enhanced chemical vapor deposition and analysized its characteristics. We obtained the metal-containing diamond-like carbon films using $CH_4$, Ar gas and aluminum target. We observed the changes of electrical conductivity, microhardness and surface morphology according to $Ar/CH_4$ ratio, substrate bias and target bias. As the target bias and $Ar/CH_4$ ratio increase and the substrate bias decreases, the electrical conductivity and surface roughness increase. The increase of hardness involves decrease of the electrical conductivity. Metal-containing amorphous hydrogenated carbon films show improved adhesion on metal substrates compared to pure diamond-like carbon films and better electrical conductivity.

• Journal of Electrical Engineering and Technology
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• 제7권6호
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• pp.983-989
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• 2012

The purpose of this paper is to decide the optimum synthesis conditions of polycrystalline diamond films according to the ratio of gas mixture. Diamond films were deposited with cyclo-hexane as a carbon precursor by the microwave plasma enhanced chemical vapor deposition process. The optimum oxygen ratio to cyclo-hexane was reached about 125 % under the fixed 0.3% c-hexane in hydrogen. Oxygen plays a role in etching the graphitic components of carbon sp2 bond effectively. By OES measurement, the best synthesis conditions found out about 12.5 % and 15.75 %, which is the emission intensity ratios of CH(B-X) and $H{\beta}$ on $H{\alpha}$, respectively. Also, the electron temperature was similar about 5,000 to 5,200 K in this work.

• 한국세라믹학회지
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• 제35권1호
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• pp.41-47
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• 1998

Cutting and planarization of diamond films have been performed using copper vapor laser under air at-mosphere. Diamond films of about 350${\mu}{\textrm}{m}$ and 800 ${\mu}{\textrm}{m}$ thick have been synthesized with DC plasma assisted chemical vapor deposition. The position of a specimen has been controlled by computer-driven stage. With copper vapor laser beam of 7W cutting depth increases rapidly and saturates with increasing scan number and decreasing scan speed. 8 repetitive scans at scan speed 0.5 mm/sec produce the maximum cutting depth without focus shifting Rod-shape copper vapor laser beam can be made and used effectively in planar-ization of rough diamond surface.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.973-976
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• 2008

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gas. We examined the effects of the RF power on the electrical properties of the DLC films. The films were deposited at several RF powers ranging from 50 to 175 W in steps of 25 W. The leakage current of DLC films increased at higher deposition RF power. And the resistivities of DLC films grown at 50 W and 175 W were $5\times10^{11}$ ${\Omega}cm$ and $2.68\times10^{10}$ ${\Omega}cm$, respectively.

• 한국결정성장학회지
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• 제13권1호
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• pp.36-40
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• 2003

$CH_4/(C_2H_5O)_4Si/H_2$/Ar가스 혼합물을 출발 반응원료로 하여 플라즈마 화학기상증착법으로 Si 기판 위에 유사 다이아몬드 나노복합체(diamond-like nanocomposite, DLN) 박막을 증착하였다. 성장된 막의 화학구조와 미세구조를 확인하였으며 막의 마모특성을 평가하였다. 증착된 DLN 막은 다이아몬드와 유사한 a-C:H 구조와 실리카와 유사한 a-Si:O 구조가 네트워크 형태로 구성되어 있음을 확인하였으며 극도로 낮은 마모계수와 마모속도를 나타내어 내마모 코팅용 보호막으로 의 응용에 적합한 것으로 나타났다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 15TH KACG TECHNICAL MEETING-PACIFIC RIM 3 SATELLITE SYMPOSIUM SESSION 4, HOTEL HYUNDAI, KYONGJU, SEPTEMBER 20-23, 1998
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• pp.1-20
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• 1998

Processing of thin films by chemical vapor deposition (CVD) is accompanied by chemical reactions, in which the rigorous kinetic analysis is difficult to achieve. In these conditions, thermodynamic calculation leads to better understanding of the CVD process and helps to optimise the experimental parameters to obtain a desired product. A CVD phase diagram has been used as guide lines for the process. By determining the effect of each process variable on the driving force for deposition, the thermodynamic limit for the substrate temperature that diamond can deposit is calculated in the C-H system by assuming that the limit is defined by the CVD diamond phase diagram. The addition of iso-supersaturation ratio lines to the CVD phase diagram in the Si-Cl-H system provides additional information about the effects of CVD process variables.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• 한국전기전자재료학회논문지
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• 제11권6호
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• pp.465-471
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• 1998

Diamond-like carbon (DLC) films have been prepared by means of the plasma enhanced chemical vapor deposition (PECVD) method using vertical-capacitor electrodes. The deposition rata in our experiment is relatively small compared with that in the conventional PECVD methods, which implies that the accumulation of the neutral $CH_n$ radicals on the substrates due to the gravitational movement may not contribute to the deposition of DLC films. The hardness and the transparency were measured as a function of the ratio of the partial pressure of $CH_4-H_2$ mixtures or the hydrogen contents of specimens. The coefficients of friction between DLC films and a $Si_3N_4$ tip measured by using a lateral force microscope are in the range of 0.024 to 0.033 which depend on the hydrogen contents in DLC, and the surface roughness depends mainly on the deposition rate. The optical gaps increase with increasing the hydrogen contents. DCL films deposited on Pt-coated Si wafers show the stable emission characteristics, and the turn-on fields are in the range of 11 to 20 $V/\mu$m.

• 한국표면공학회지
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• 제29권3호
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• pp.149-156
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• 1996

Conducting diamond-like carbon films are synthesized using Triode Magnetron Sputtering-Plasma Enhanced Chemical Vapor Deposition(TMS-PECVD), and are examined by four point probe, microhardeness tester, and scanning electron miscroscopy(SEM). As the target bias and Ar/CH$_4$, ratio increase, the electrical resitivity and microhardness of the films are found to decrease, and also, their surface morphologies tend to be rough. While the resistivities of the films are shown to increase in proportion to the increase of the substrate bias, the microhardness of the films is shown to be maximun value(1600kg/$\textrm{mm}^2$) at a certain substrate bias(-70V). We can obtain the conducting diamond-like carbon films with the microhardness of 1600(kg/$\textrm{mm}^2$) and electrical resitivity of 16($\Omega$cm) at the process condition such as target bias -400V, substrate bias -70V, and Ar/$CH_4$ ratio 20.