• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.352-353
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• 2005

Indium tin oxide (ITO) thin film was polished by chemical mechanical polishing (CMP) immediately after pad conditioning with the various conditioning temperatures by control of do-ionized water (DIW). Light transparent efficiency of ITO thin film was improved after CMP process after pad conditioning at the high temperature because the surface morphology was smoother by soften polishing pad and decreased particle size.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.167-171
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• 1996

Chemical mechanical polishing (CMP) has become widely accepted for the planarization of multi-interconnect structures in semiconductor manufacturing. However, perfect planarization is not so easily achieved because it depends on the pattern sensitivity, the large number of controllable process parameters, and the absence of a reliable process model, etc. In this paper, we realized the planarization of deposited oxide layers followed by metal (W) polishing as a replacement for tungsten etchback process for via formation. Atomic force microscope (AFM) is used for the evaluation of pattern topography during CMP. As a result, AFM evaluation is very attractive compared to conventional methods for the measurement of planarity. Moreover, it will contribute to analyze planarization characteristics and establish CMP model.

• Design & Manufacturing
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• v.2 no.4
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• pp.44-47
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• 2008

The magnetic polishing is the useful method to finish some machinery fabrications by using magnetic power. This method is one of the precision techniques and has an aim for clean technology in the transportation of the pure gas in the clean pipes. The magnetic abrasive polishing method is not so common in the field of machine that it is not known to widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in this paper we deals with the development of the magnetic abrasive with the use of Sr-Ferrite. In this development, abrasive grain A has been made by using the resin bond fabricated at low temperature. And magnetic abrasive powder was fabricated from the Sr-Ferrite which was crushed into 200 mesh. The XRD analysis result shows that only A abrasive and Sr-Ferrite crystal peaks were detected, explaining that resin bond was not any more to contribute chemical reaction. From SEM analysis, we found that A abrasive and Sr-Ferrite were strongly bonding with each other.

• Journal of the Korean Society of Safety
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• v.19 no.2
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• pp.6-10
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• 2004

The magnetic polishing is the useful method to finish using magnetic power of magnet. This method is one of precision polishing techniques and has an aim of the clean technology using for the pure of gas and inside of the clean pipe for transportation. The magnetic abrasive polishing method is not so common for machine that it tis not spreaded widely. There are rarely researcher in this field because of non-effectiveness of magnetic abrasive. Therefore, in ths paper deals with development of the magnetic abrasive using sludge. In this development, abrasive grain WA and GC used to resin bond fabricated low temperature. And magnetic material was fabricated from the sludge which were crused into 200 mesh and average diameter ${\o}$1.2mm ball type. The XRD analysis result show that only WA and GC abrasive and sludge crystal peaks detected which explains resin bond was not any more chemical reaction. From SEM analysis it tis found that WA and GC abrasive and sludge were stron bonding with each other by bond.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.963-967
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• 2008

There are many factors to affect polishing performance normally in chemical mechanical polishing (CMP) process. One of the factors is a pad profile. A pad profile has not been considered as a significant factor. However, a pad profile is easily changed by conditioning process in CMP, and then changed pad profile affects polishing performance. Therefore, understanding how the pad profile is changed by conditioning process is very important. In this paper, through the simulation based on kinematic analysis, the variation of the pad profile was described in accordance with difference condition of conditioning process. A swing-arm type conditioner was applied in this simulation. A swing-arm type conditioner plays a role of generating asperities on pad surface. The conditions of conditioing process to get uniform removal were also investigated by comparing the simulation with the experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.57-58
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• 2006

Chemical-mechanical planarization (CMP) of Cu has used currently in semiconductor process for multilevel metallization system. This process requires the application of a considerable down-pressure to the sample in the polishing, because porous low-k films used in the Cu-multilevel interconnects of 65nm technology node are often damaged by mechanical process. Also, it make possible to reduce scratches and contaminations of wafer. Electrochemical mechanical planarization (ECMP) is an emerging extension of CMP. In this study, the electrochemical mechanical polisher was manufactured. And the static and dynamic potentiodynamic curve of Cu were measured in KOH based electrolyte and then the suitable potential was found.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.112-112
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• 2008

박막형 태양전지에 관한 연구는 1954년 D.C. Reynolds 가 단결정 CdS 에서 광기전력을 발견하면서부터 시작되었다. 고효율 단결정 규소 태양전지가 간편하게 제작되고 박막형 태양전지의 수명문제가 대두되어 한때는 연구가 중단되어지기도 하였으나, 에너지 문제가 심각해지면서 값이 저렴하고 넓은 면적에 쉽게 실용화 할 수 있는 박막형 태양전지에 많은 관심을 가지게 되었다. 박막형 태양전지에 사용되는 CdS는 II-VI 족 화합물 반도체로서 에너지금지대폭이 2.42eV인 직접천이형 n-type 반도체로서 대부분의 태양광을 통과시킬 수 있으며 가시광선을 잘 투과시키고 낮은 비저항으로서 광흡수층인 CdTe/$CuInSe_2$ 등과 같이 태양전지의 광투과층(윈도레이어)으로 널리 사용되고 있다. 이러한 이종접합 박막형 태양전지의 효율을 높이기 위해선 윈도레이어 재료인 CdS 박막의 낮은 전기 비저항치와 높은 광 투과도 값이 요구되어지고 있다. CdS 박막의 제작방법으로는 spray pyrolysis법, 스크린프린팅, 소결법, puttering법, 전착법, CBD(chemical bath deposition)법 및 진공증착법 등의 여러 가지 방법들이 보고되었다. 이 중 sputtering의 경우, 다른 방법들에서는 얻기 어려운 매우 얇은 두께의 박막 증착이 가능하며, 균일성 또한 우수하다. 또한 대면적화가 용이하여 양산화 기술로는 다른 제조 방법들에 비해 많은 장점을 가지고 있다. 따라서 본 연구에서는 sputtering에 의해 증착한 CdS의 박막에 광투과도 등의 향상을 위하여 CMP( chemical mechanical polishing) 공정을 적용하여 표면 특성을 개선하고자 하였다. 그 기초적인 자료로서 CdS 박막의 CMP 공정 조건에 따른 연마율과 비균일도, 표면 특성 등을 ellipsometer, AFM(atomic force microscopy) 및 SEM(scanning electron microscope) 등을 활용 하여 분석하였다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.8
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• pp.863-867
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• 2014

In this study, an acoustic emission (AE) sensor was used for measuring the abrasive and molecular-scale phenomena in chemical mechanical polishing (CMP). An AE sensor is a transducer that converts a mechanical wave into an electrical signal, and is capable of acquiring high-level frequencies from materials. Therefore, an AE sensor was installed in the CMP equipment and the signals were measured simultaneously during the polishing process. In this study, an AE monitoring system was developed for investigating the sensitivity of the AE signal to (a) the variations in the material properties of the pad, slurry, and wafer and (b) the change in conditions during the CMP process. This system was adapted to Oxide and Cu CMP processes. AE signal parameters including AE raw frequency, FFT, and amplitude were analyzed for understanding the abrasive and molecular-level phenomena in the CMP process. Finally, we verified that AE sensors with different bandwidths could function in complementary ways during CMP process monitoring.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.1-4
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• 2007

This paper discusses two approaches for pre-polishing optimization of oxide chemical mechanical planarization (CMP) that can be used as alternatives to the commonly applied dummy structure insertion in shallow trench isolation (STI) and replacement gate (RG) technologies: reverse nitride masking (RNM) and oxide etchback (OEB). Wafers have been produced using each optimization technique and CMP tests have been performed. Dishing, erosion and global planarity have been investigated with the help of conductive atomic force microscopy (C-AFM). The results demonstrate the effectiveness of both techniques which yield excellent planarity without dummy structure related performance degradation due to capacitive coupling.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.11-14
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• 2007

Consumables used in Chemical Mechanical Polishing (CMP) have been played important role to improve quality and productivity. Since the properties of consumables constantly change with various reasons, such as shelf time, manufactured time, lot to lot variation from supplier and so on, CMP results are not constant during the process. Also, CMP process results are affected by multiple sources from wafer, conditioner, pad and slurry. Therefore, multiple sensing systems are required to monitor CMP process variation. In this paper, the authors focus on development of monitoring system for CMP process which consist of force, temperature and displacement sensor to measure the signal from CMP process. With monitoring systems mentioned above, complex CMP phenomena can be investigated more clearly.