• Journal of the Semiconductor & Display Technology
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• v.10 no.4
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• pp.47-51
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• 2011

We investigated the substrate surface polishing by the spherical rigid abrasive under the compression using classical molecular dynamics modeling. We performed three-dimensional molecular dynamic simulations using the Morse potential functions for the various slide-to-roll ratios, from 0 to 1, and then, the compressive forces acting on the spherical rigid abrasive were calculated as functions of the time and the slide-to-roll ratio. The friction coefficients obtained from the classical molecular dynamics simulations were compared to those obtained from the experiments; and found that the molecular dynamic simulation results with the slide-to-roll ratio of 0 value were in good agreement with the experimental results.

• Journal of the Semiconductor & Display Technology
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• v.21 no.4
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• pp.71-76
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• 2022

We evaluated and developed a 6th generation large-size polisher in the type of face-up and Oscar. We removed the hillocks of the low temperature poly-silicon (LTPS) thin film with this polisher. The surface roughness of LTPS was lowered from 7.9 nm to 0.6 nm after CMP(chemical mechanical polishing). The thickness of the LTPS is measured through reflectance in real time during polishing, and the polishing process is completed according to this thickness. The within glass non-uniformity (WIGNU) was 6.2% and the glass-to-glass non-uniformity (GTGNU) was 2.5%, targeting the LTPS thickness of 400Å. In addition, the residual slurry after the CMP process was removed through the Core Flow PVA Brush and alkaline chemical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.145-148
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• 2003

Recently, the recycle of CMP (chemical mechanical polishing) slurries have been positively considered in order to reduce the high COO (cost of ownership) and COC (cost of consumables) in CMP process. Among the composition of slurries (buffer solution, bulk solution, abrasive particle, oxidizer, inhibitor, suspension, antifoaming agent, dispersion agent), the abrasive particles are one of the most important components. Especially, the abrasive particles of slurry are needed in order to achieve a good removal rate. However, the cost of abrasives, is still very high. In this paper, we have collected the silica abrasive powders by filtering after subsequent CMP process for the purpose of abrasive particle recycling. And then, we have studied the possibility of recycle of reused silica abrasive through the analysis of particle size and hardness. Also, we annealed the collected abrasive powders to promote the mechanical strength of reduced abrasion force. Finally, we compared the CMP characteristics between self-developed KOH-based silica abrasive slurry and original slury, As our experimental results, we obtained the comparable removal rate and good planarity with commercial products. Consequently, we can expect the saving of high cost slurry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.479-480
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• 2006

The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.219-225
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• 2005

To investigate the effects of slurry temperature on the chemical mechanical polishing(CMP) performance of oxide film with silica and ceria slurries, we have studied slurry properties as a function of different slurry temperature. Also, the effects of each input parameter of slurry on the oxide CMP characteristics were investigated. The pH showed a slight tendency of decrease, the conductivity in slurries showed an increased tendency, the mean particle size in slurry decreased, and the zeta potential of slurry decreased with temperature. The removal rates significantly increased and maintained at the specific levels over 4$0^{\circ}C$. The better surface morphology of oxide films could be obtained at 40 $^{\circ}C$ of silica slurry and at 90 $^{\circ}C$ of ceria slurry. It is found that the CMP performance of oxide film could be significantly improved or controlled by change of slurry temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.707-710
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). In this paper, we have investigated slurry properties and CMP performance of silicon dioxide (oxide) as a function of different temperature of slurry. Thermal effects on the silica slurry properties such as pH, particle size, conductivity and zeta potential were studied. Moreover, the relationship between the removal rate (RR) with WIWNU and slurry properties caused by changes of temperature were investigated. Therefore, the understanding of these temperature effects provides a foundation to optimize an oxide CMP Process for ULSI multi-level interconnection technology.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.6
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• pp.1401-1406
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• 2014

Knowledge of the manufacturing process of semiconductor devices in order to obtain a copper pattern using chemical mechanical polishing (CMP) planarization using a Wafer polishing process is applied with a thickness of the copper measured in real time, which need to be precisely controlled by, where the acquisition the actual thickness of the sensor value with the calculated value in terms of error can occur in the process. Approximated the actual measurement values so as to obtain a method using a simple average, moving average, compared to the results using filters onggo Strom real-time measurements of the thickness of the units of the control system to reduce the variation in the implementation of the method described for the.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.545-545
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• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.65-65
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• 2003

Chemical mechanical polishing (CMP) is one of the most important processes in recent ULSI (Ultra Large Scale Integrated Circuit) manufacturing technology. Recently, ceria slurries with surfactant have recently been used in STI-CMP,[1] became they have high oxide-to-nitride removal selectivity and widen the processing margin The role of the abrasives, however, on the effect of planarization on STI-CMP is not yet clear. In this study, we investigated how the crystal characteristic affects the planarization efficiency of wafer surface with controlling crystallite size and poly crystalline abrasive size independently.