• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.241-246
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• 2016

ZnO thin films have wide application areas due to its versatile properties as transparent conductors, wide-bandgap n-type semiconductors, gas sensor materials, and etc. We have performed a systematic investigation on ultraviolet-assisted CVD (chemical vapor deposition) method. Ultraviolet irradiation during the deposition of ZnO causes chemical reduction on the growing surface; which results in the reduction of the deposition rate, increase in the surface roughness, and decrease of the electrical resistivity. These effects produce larger characteristic variation with various deposition conditions in terms of surface morphology and optical/electrical properties compared to normal CVD deposited ZnO thin films. This versatile controllability of ultraviolet-assisted CVD can provide a larger processing options in the fabrication of nano-structured materials and flexible device applications.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.275-282
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• 1995

III족 원료 가스로 triethylgallium(TEGa)과 trimethylindium(TMIn)을 사용하고 V족 원료 가스로 사전 열 분해하지 않은 arsine(AsH3)과 monoethylarsine(MEAs)을 사용하여 ultrahigh vacuum chemical vapor deposition(UHVCVD)법으로 Si3N4로 패턴된 GaAs(100)기판 위에 GaAs와 InGaAsqkr막을 선택적으로 에피택시 성장을 하였다. V족 원료 가스를 사전 열 분해하지 않으므로 넓은 성장 온도 구간과 V/lll 비율에서도 선택적으로 박막이 성장되었다. 또한 선택 에피택시의 성장 메카니즘을 규명하기 위하여 다양한 filling factor(전체면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 면적중 opening된 면적의 비율)를 가지는 기판을 제작하여 성장에 사용하였다. UHVCVD법에서는 마스크에 입사된 분자 상태의 원료 기체가 탈착된 후 표면 이동이나 가스 상태의 확산과정 없이 마스크로부터 제거되므로 패턴의 크기와 모양에 따른 성장 속도의 변화나 조성의 변화가 없을 뿐만 아니라 chemical beam epitaxy(CBE)/metalorganic molecular beam epitaxy(MOMBE)법에서 알려진 한계 성장온도 이하에서 선택 에피택시 성장이 이루어졌다.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.1
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• pp.72-78
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• 2014

The study has been designed to develop water vapor supply for semiconductor industry, industrial gas manufacturing, impurities analysis, and fuel cell. Water concentration in air reached $1019{\mu}mol/mol$ at dew temp ($-20^{\circ}C$) and water concentration in CO2 reached $127{\mu}mol/mol$ at dew temp ($-40^{\circ}C$. Carbon dioxide needs more wet gas than air because interaction potential of carbon dioxide shows more strong attraction than air.

• Carbon letters
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• v.4 no.4
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• pp.163-167
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• 2003

The "Film boiling" Chemical Vapor Infiltration (CVI) process is a rapid densification one developed in particular for the elaboration of carbon/carbon composite materials. In order to optimize this new thermal gradient process, we have carried out several studies, on one hand, about the nature of the complex chemical reactions in a confined medium, and on the other hand, relative to the role of heat and mass transfers inside the preform. We show in this study that the introduction of a permeable sheath around the preform leads to hybrid liquid/gas CVI process which presents the advantages of very high densification rates associated with a moderate input energy.

• Journal of Environmental Science International
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• v.21 no.12
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• pp.1463-1468
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• 2012

The purpose of this work is to study the desorption characteristics of water vapor on zeolites saturated with water vapor. Three kinds of zeolite; zeolite 3A, zeolite 4A, and zeolite 5A were used as adsorbent. The desorption experiments with several different temperatures in the range of $90{\sim}150^{\circ}C$ and several different flow rates in the ranges of 0~0.4 L/min on zeolite bed were carried out. The desorption ability of water vapor was most effective on zeolite 5A among the compared zeolites. The higher the desorption temperature of water vapor was, the faster the desorption velocity was. The desorption ability of water vapor with an air supply was higher than that without an air supply. The most appropriate air flow rate was considered as 0.1 L/min.

• Korean Journal of Materials Research
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• v.15 no.4
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• pp.246-251
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• 2005

Plasma enhanced chemical vapor deposition(PE-CVD) method has an advantage in synthesizing carbon nanotubes(CNTs) at lower temperature compared with thermal enhanced chemical vapor deposition(TE-CVD) method. In this study, CNTs was prepared by using PE-CVD method. The growth rate of CNT was faster more than 100 times on using Invar alloy than iron as catalyst. It was found that chrome silicide was formed at the interface between chrome layer and silicon substrate which should be considered in designing process. Nanoparticles of Invar catalyst were found oxidized on their surfaces with a depth of 10 m. Microstructure was analyzed by scanning electron microscopy, transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive x-ray spectrometry. Based on the result of analysis, growth mechanism at an initial stage was suggested.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2405-2408
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• 2007

Oxidation of alkylaromatics including toluene and p-methoxytoluene has been carried out over alkali metal (AM)-containing catalysts such as AM-V/TiO2 and AM-VSb/Al2O3 in vapor-phase using oxygen as an oxidant. The selectivity for partial oxidations increases with incorporation of an alkali metal or with increasing the basicity of alkali metals (from Na to Cs), irrespective of the supports or reactants. However, the conversion is nearly constant or slightly decreasing with the addition of alkali metals in the catalyst. The increased selectivity may be related with the decreased acidity even though more detailed work is necessary to understand the effect of alkali metals in the oxidation. The AM-VSb/Al2O3 may be suggested as a potential selective catalyst for vapor-phase oxidations.

• Journal of the Korean institute of surface engineering
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• v.48 no.5
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• pp.245-252
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• 2015

In recent years, the cleaning and activation technology of surfaces using atmospheric plasma as well as the deposition technology for coating using atmospheric plasma have been demonstrated conclusively and drawn increasing industrial attention. Especially, due to the simplicity, the technology using atmospheric plasma enhanced chemical vapor deposition has been widely studied from many researchers. The plasma source type commonly used as the stabilization of diffuse glow discharges for atmospheric pressure plasma enhanced chemical vapor deposition pressure is the dielectric barrier discharge. In this review paper, some kinds of modified dielectric barrier discharge type will be presented. And, the characteristics of silicon based compound such as SiOx and SiNx deposited using atmospheric plasma enhanced chemical vapor system will be discussed.

• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.79-83
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• 1994

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.