• 한국자동차공학회논문집
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• 제23권2호
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• pp.199-207
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• 2015

Solid materials of ammonia sources with SCR have been considered for the application of lean NOx reduction in automobile industry, to overcome complex problems of liquid urea based SCR. These solid materials produce ammonia gas directly with proper heating and can be packaged by compact size, because of high volumetric ammonia density. Among ammonium salts and metal ammine chlorides, calcium ammine chloride was focused on this paper due to low decomposition temperature. In order to make calcium ammine chloride in lab-scale, simple reactor and glove box was designed and built with ammonium gas tank, regulator, and sensors. Basic test conditions of charging ammonia gas to anhydrous calcium chloride are chosen from equilibrium vapor pressure by Van't Hoff plot based on thermodynamic properties of materials. Synthetic method of calcium ammine chloride were studied for different durations, temperatures, and pressures with proper ammonia gas charged, as a respect of ammonia gas adsorption rate(%) from simple weight calculations which were confirmed by IC. Also, lab-made calcium ammine chloride were analyzed by TGA and DSC to clarify decomposition step in the equations of chemical reaction. To understand material characteristics for lab-made calcium ammine chloride, DA, XRD and FT-IR analysis were performed with published data of literature. From analytical results, water content in lab-made calcium ammine chloride can be discovered and new test procedures of water removal were proposed.

• 한국분말재료학회지
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• 제23권2호
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• pp.91-94
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• 2016

High-quality colloidal CdSe/ZnS (core/shell) is synthesized using a continuous microreactor. The particle size of the synthesized quantum dots (QDs) is a function of the precursor flow rate; as the precursor flow rate increases, the size of the QDs decreases and the band gap energy increases. The photoluminescence properties are found to depend strongly on the flow rate of the CdSe precursor owing to the change in the core size. In addition, a gradual shift in the maximum luminescent wave (${\lambda}_{max}$) to shorter wavelengths (blue shift) is found owing to the decrease in the QD size in accordance with the quantum confinement effect. The ZnS shell decreases the surface defect concentration of CdSe. It also lowers the thermal energy dissipation by increasing the concentration of recombination. Thus, a relatively high emission and quantum yield occur because of an increase in the optical energy emitted at equal concentration. In addition, the maximum quantum yield is derived for process conditions of 0.35 ml/min and is related to the optimum thickness of the shell material.

• 에너지공학
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• 제15권2호
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• pp.107-117
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• 2006

물을 분해하여 수소를 만드는 방법으로서 열화학싸이클을 이용한 방법에 대하여 그동안의 연구 동향에 대하여 살펴보았다. 수소생산이란 관점에서 열화학싸이클이 갖는 장점은 일정한 고온의 열을 얻을 수 있다면, 반응속도의 향상과 아울러 대용량화가 가능하다는 점이다. 안정한 물을 분해하려면 물의 산화/환원이 용이한 매개체를 써서 수소 및 산소를 발생하게 하고 순환시키게 되는데, 매개체가 유독성 물질이라면 이 과정에서 누출이 되지 않도록 하여야 한다. 아직 상용화단계에는 미치지 못하였지만, 일본, 스위스, 이스라엘, 미국, 한국 등에서 집중적으로 연구되고 있는 내용은 IS 싸이클과 ZnO/Zn, $Fe_3O_4/FeO$등과 같은 금속산화물계를 이용한 싸이클들이며, 고온용 및 내부식성 소재와 시스템 분야에서 아직 해결해야할 점이 많다.

• 공업화학
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• 제10권2호
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• pp.231-236
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• 1999

결정상과 분산도가 조절된 $MoO_3$/$SiO_2$ 담지촉매를 제조하여 촉매의 표면특성과 디벤조티오펜 탈황반응의 활성도를 고찰하였다. Mo의 표면담지량은 4 atoms $Mo/nm^2$이었으며, 실리카 표면 위에 형성된 $MoO_3$의 결정상은 sintered hexagonal, sintered orthorhombic, 및 dispersed hexagonal상이었다. XRD, Raman, 및 $O_2$ 흡착 결과 $MoO_3$의 표면분산도는 sintered hexagonal < sintered orthorhombic < dispersed hexagonal 순으로 증가하였다. TPR 결과 $MoO_3$ 결정은 $650^{\circ}C$에서 $MoO_2$로, $1000^{\circ}C$에서 Mo로 환원됨을 알 수 있었다. 디벤조티오펜 탈황반응을 30기압, $350{\sim}500^{\circ}C$ 온도범위에서 수행하였으며, 실험 결과 활성도는 $MoO_3$ 결정체의 $SiO_2$ 표면에서의 분산도에 비례하여 증가함을 알 수 있었다.

• 공업화학
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• 제17권5호
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• pp.547-551
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• 2006

ASTM D5757-95에 따른 입자 마모 측정기와 lab-scale 유동층 연소로에서 국내 무연탄 회재와 모래의 입자 마모 특성을 실험하였다. 기체유속에 따른 마모 특성으로 비산 회재의 입도 분포, 마모 속도, 마모율 등을 측정하였다. 일반적으로 유동층 층물질로 사용되는 모래보다 회재가 마모에 취약해 비산 회재의 발생이 높았으며 마모지수의 경우 5배 정도 높게 나타났다. 기체 유속 변화에 따라 입자의 마모에 의해 미세 입자의 생성이 지속적으로 발생하였으며 다음과 같은 식을 따른다. $$\frac{dW}{dt}=-3.18{\times}10^{-7}(U-U_{mf})W$$.

• 한국표면공학회지
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• 제44권4호
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• pp.131-136
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• 2011

A kinetic study has been made for the growth of nanocrystalline diamond (NCD) particles to a continuous thin film on silicon substrate in a microwave plasma chemical vapor deposition reactor. Parameters of deposition have been microwave power of 1.2 kW, the chamber pressure of 110 Torr, and the Ar/$CH_4$ ratio of 200/2 sccm. The deposition has been carried out at temperatures in the range of $400\sim700^{\circ}C$ for the times of 0.5~16 h. It has been revealed that a continuous diamond film evolves from the growth and coalescence of diamond crystallites (or particles), which have been heterogeneously nucleated at the previously scratched sites. The diamond particles grow following an $h^2$ = k't relationship, where h is the height of particles, k' is the particle growth rate constant, and t is the deposition time. The k' values at the different deposition temperatures satisfy an Arrhenius equation with the apparent activation energy of 4.37 kcal/mol or 0.19 eV/ atom. The rate limiting step should be the diffusion of carbon species over the Si substrate surface. The growth of diamond film thickness (H) shows an H = kt relationship with deposition time, t. The film growth rate constant, k, values at the different deposition temperatures show another Arrhenius-type expression with the apparent activation energy of 3.89 kcal/mol or 0.17 eV/atom. In this case, the rate limiting step might be the incorporation reaction of carbon species from the plasma on the film surface.

• 한국표면공학회지
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• 제47권3호
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• pp.99-103
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• 2014

The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / $Alq_3$ : Rubrene (1 vol.%) / $Alq_3$ / LiF / Al / $Alq_3$ / LiF / Al (OLED #1), on which $SiN_x$ thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The $SiN_x$ thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using $SiH_4$ of 20 sccm and $N_2$ of 15~35 sccm as reactor gases. The optimum $SiN_x$ deposition condition was found to be 20 sccm $SiH_4$ and 20 sccm $N_2$ from the Ca test of the fabricated $SiN_x$ thin film. The life time of OLED #1, OLED #1 / $SiN_x$ 200 nm, OLED #1 / $SiN_x$ 400 nm and OLED #1 / $SiN_x$ 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by $SiN_x$ film and a metal film encapsulation.

• 한국재료학회지
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• 제28권5호
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• pp.301-307
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• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• 한국세라믹학회지
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• 제42권11호
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• pp.729-736
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• 2005

HTGR (High Temperature Gas-cooled Reactor) is spotlighted to next generation nuclear power plant for producing the clean hydrogen gas and the electricity. In this study, the spherical $UO_3$ gel particles were prepared by the external gelation process, and the characteristics of these particles were analyzed the particle shape, composition of precipitate, and thermal decomposition characteristics with the Streoscope, FT-IR, and X-ray diffractometer. Raw material of the ADUN (Acid Deficient Uranyl Nitrate) solution, which has [$NO_3$]/[U] mole ratio = 1.75, was obtained from dissolution of the $U_{3}O_{8}$ powder with concentrated $HNO_3$, and its concentration is 3.5 M-U/l. The broth solution is prepared with the ADUN, urea, PVA, and THFA solution. The droplets of the broth solution was made through a nozzle system. From this study, we obtained the following results; 1) an externel chemical gelation process is a suitable method in the spherical $UO_3$ particle production, 2) the particle shape are changed by an urea mixing time, THFA volume, and the viscosity of the broth solution, 3) the amorphous $UO_3$ particles obtained from these experiments was converted to $U_{3}O_{8}$ and then $UO_2$ by heat treatment in hydrogen atmosphere at $600^{\circ}C$.

• 한국태양에너지학회 논문집
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• 제33권2호
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• pp.93-100
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• 2013

Two-step thermochemical cycle using ferrite-oxide($Fe_2O_4$) device was investigated. The $H_2O$(g) was converted into $H_2$ in the first experiment which was performed using a dish type solar thermal system. However the experiment was lasted only for 2 cycles because the metal oxide device was sintered and broken down. Another problem was that the reaction was taken place mainly on a side of the metal oxide device. The m-$ZrO_2$, which was widely known as a material preventing sintering, was applied on the metal oxide device. The ferrite loading rate and the thickness of the metal oxide device were increased from 10.67wt% to 20wt% and from 10mm to 15mm, respectively. The chemical reactor having two inlets was designed in order to supply the reactants uniformly to the metal oxide device. The second-experiment was lasted for 5 cycles, which was for 6 hours. The total amount of the $H_2$ production was 861.30ml. And cerium oxide($CeO_2$) device was used for increasing $H_2$ production rate. $CeO_2$ device had low thermal resistance, however, more $H_2$ production rate than $Fe_2O_4$ device.