• Journal of Power System Engineering
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• v.19 no.2
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• pp.40-48
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• 2015

As advantages of LPG-DI engine, LPG is directly injected into combustion chamber during compression stroke to reduce compression temperature, prevent knock and spontaneous combustion, and adjust engine output using the amount of directly injected fuel, thereby reducing pumping loss caused by throttle valve. Stratified charge can be supplied nearby spark plugs to allow for overall lean combustion, which improves thermal efficiency and can cope with problems regarding emission regulations. In addition, it is characterized by free designing of intake manifold. Despite the fact that LPG-DI has many advantages as described above, there is lack of detailed investigation and study on spray characteristics, combustion flame characteristics, and ignition probability. In this study, a visualization experiment system that consists of visualization combustion chamber, air supply control system, emission control system, LPG fuel supply system, electronic control system and image data acquisition system was designed and manufactured. For supply of stratified charge in the combustion chamber, alignment of injector and spark plugs was made linear.

• International Journal of Computer Science & Network Security
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• v.24 no.4
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• pp.197-205
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• 2024

This paper presents a fully automated stand-alone irrigation system with GSM (Global System for Mobile Communication) module. Solar energy is utilized to power the system and it is aimed to conserve water by reducing water losses. The system is based on a DC water pump that draws energy from solar panels along with automated water flow control using a moisture sensor. It is also fitted with alert and protection system that consists of an ultrasonic sensor and GSM messages sender that transmits signals showing the levels of the water in the reservoir and the battery charge. The control system is designed to stop the water pump from pumping water either when the battery level drops to equal or less than 10% of its full charge, or when the water level becomes less than 10 cm high in the reservoir. The experimental results revealed that the system is appropriate to use in remote areas with water scarcity and away from the national grid.

• Journal of IKEEE
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• v.28 no.1
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• pp.78-89
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• 2024

PMIC chips based on a BCD process used in automotive semiconductors require multi-time programmable (MTP) intellectual property (IP) that does not require additional masks to trim analog circuits. In this paper, MTP cell size was reduced by about 18.4% by using MTP cells using PMOS capacitors (PCAPs) instead of NMOS capacitors (NCAPs) in MTP cells, which are single poly EEPROM cells with two transistors and one MOS capacitor for small-area MTP IP design. In addition, from the perspective of MTP IP circuit design, the two-stage voltage shifter circuit is applied to the CG drive circuit and TG drive circuit of MTP IP design, and in order to reduce the area of the DC-DC converter circuit, the VPP (=7.75V), VNN (=-7.75V) and VNNL (=-2.5V) charge pump circuits using the charge pumping method are placed separately for each charge pump.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.327-330
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• 2004

It is shown that the hot carrier degradation due to enhanced hot holes trapping dominates PMOSFETs lifetime both in thin and thick devices. Moreover, it is found that in 0.13 ${\mu}m$ CMOSFET the PMOS lifetime under CHC (Channel Hot Carrier) stress is lower than the NMOSFET lifetime under DAHC (Drain Avalanche Hot Carrier) stress. Therefore. the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method and highly necessary to enhance overall device lifetime or circuit lifetime in upcoming nano-scale CMOS technology.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.53-63
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• 1993

Device degradations by the Fowler-Nordheim tunneling have been studide. The changes of device characteristics such as the threshold voltage, subthreshold slope, I-.or. curves have been measured after bidirectionally stressing n-channel MOSFET's and p-channel MOSFET's. Also the interface states have been directly measured by the charge pumping methodIt is shown that the change of interface states is determined by the number of hole carriers tunneling the gate oxide and electrons which are trapped in the gate oxide. Also, in this paper, we propose a model for device lifetime limited by the increase of interface states.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.117-120
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• 2005

The SONOS devices have been fabricated by the conventional $0.35{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with NOR array. Two-bit operation using conventional process achieve the high density memory compare with other two-bit memory. Lateral diffusion phenomenon in the two-bit operation cause soft error in the memory. In this study, the programming conditions arc investigated in order to reduce lateral diffusion for two-bit operation of CSL-NOR type SONOS flash cell.

• Transactions of the Korean Society of Automotive Engineers
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• v.11 no.5
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• pp.7-14
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• 2003

Exhaust Gas Recirculation (EGR) system is used to reduce NOx emission, to improve fuel economy, and to suppress knock since it offers the benefits of the inlet charge dilution. The effects of EGR was investigated on the performance and emission to reduce exhaust thermal load with a single cylinder liquid-phase LPG injection engine, in a wide range of EGR rate, engine conditions and LPG proportions. As EGR rate was increased, NOx was reduced while HC was increased. Pumping loss reduction by EGR improved bsfc and increased EGR lowered exhaust gas temperature. And, LPG proportions were made a difference on the performance and emission characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.157-158
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• 2007

Effects of post-metallization anneal (PMA) on interface trap characteristics of Si-$SiO_2$ are studied. The conventional PMA method utilizes forming gas anneal, where 10% hydrogen in nitrogen atmosphere is used. A new PMA method utilizes hydrogen rich PECVD- silicon nitride $(SiN_x)$ film as a hydrogen diffusion source and a out-diffusion blocking layer. It can be shown through charge pumping current measurement that the new PMA is indeed effective to decrease Si-$SiO_2$ interface trap density.

• Current Applied Physics
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• v.18 no.11
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• pp.1182-1184
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• 2018

The combination of angular spin momentum with electronics is a promising successor to charge-based electronics. The conduction bands in GaAs may become spin-polarized via optical spin pumping, doping with magnetic ions, or induction of a moment with an external magnetic field. We investigated the spin populations in GaAs with x-ray magnetic circular dichroism for each of these three cases. We find strong anti-symmetric lineshapes at the Ga $L_3$ edge indicating conduction band spin splitting, with differences in line width and amplitude depending on the source of spin polarization.