• Water for future
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• v.21 no.4
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• pp.399-406
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• 1988

Presented in this paper is a brief summary of the basic theory and observation from a laboratory investigation aimed at determining flow characteristics and ice jam topography in a sinuous channel, and in a single-bend channel. The sinuous channel comprised thirteen $90^{\circ}$ bends and was of comparatively small s\aspect ratio. The single-bend channel was a $180^{\circ}$ bend, which was an order of magnitude large in width as well as aspect ratios than the sinuous channel. The simulated ices were polyethylene and polypropylene beads and block. The streamwise velocities near the bottom were larger than that of surface in sinuous channel and forming ice jam in sinuous channel, this phenoumena were found strongly. Jams were generally thicker along the inner bank of bends. The path of maximum-streamwise velocity was displaced towards approachs side of the inner bank of bends. Radial variation of jam thickness was to be regular by increasing size of ice fragments. The rate of jam head progression around outer bank of the single bend was faster than that of inner bank and its velocity was roughly steady. With increasing Froude number, jm thickness became less uniformly distributed; being generally thicker along the inner bank and near the jam's toe. Two-layer model might be adaptable for the computing the streamwise velocity in shallow river bends. Two cells of secondary flow cound be expected in ice covered-river bends.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.10
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• pp.1-7
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• 2004

In order to enhance the electron mobility in SOI n-MOSFET, we fabricated fully depletion(FD) n-MOSFET on the strained Si/relaxed SiGa/SiO$_2$/Si structure(strained Si/SGOI) formed by inserting SiGe layer between a buried oxide(BOX) layer and a top silicon layer. The summated thickness of the strained Si and relaxed SiGe was fixed by 12.8 nm and then the dependency of electron mobility on strained Si thickness was investigated. The electron mobility in the FD n-MOSFET fabricated on the strained Si/SGOI enhanced about 30-80% compared to the FD n-MOSFET fabricated on conventional SOI. However, the electron mobility decreased with the strained Si thickness although the inter-valley phonon scattering was reduced via the enhancement of the Ge mole fraction. This result is attributed to the increment of intra-valley phonon scattering in the n-channel 2-fold valley via the further electron confinement as the strained Si thickness was reduced.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.425-430
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• 2014

This paper analyzed the change of subthreshold current for gate oxide thickness of double gate(DG) MOSFET. Poisson's equation had been used to analyze the potential distribution in channel, and Gaussian function had been used as carrier distribution. The potential distribution was obtained as the analytical function of channel dimension, using the boundary condition. The subthreshold current had been analyzed for gate oxide thickness, and projected range and standard projected deviation of Gaussian function. Since this analytical potential model was verified in the previous papers, we used this model to analyze the subthreshold current. Resultly, analytical model showed that subthreshold current was influenced by parameters of Gaussian function and gate oxide thickness of DGMOSFET.

• Analytical Science and Technology
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• v.27 no.1
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• pp.34-40
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• 2014

SPLITT fractionation (SF) allows continuous (and thus a preparative scale) separation of micronsized particles into two size fractions ('fraction-a' and 'fraction-b'). SF is usually carried out in a thin rectangular channel with two inlets and two outlets, which is equipped with flow stream splitters at the inlet and the outlet of the channel, respectively. A new large scale splitter-less gravitational SF (GSF) system had been assembled, which was designed to eliminate the flow stream splitters and thus is operated by the full feed depletion (FFD) mode (FFD-GSF). In the FFD mode, there is only one inlet through which the sample is fed. There is no carrier liquid fed into the channel, and thus prevents the sample dilution. The effects of the sample-feeding flow rate, the channel thickness on the fractionation efficiency (FE, number % of particles that have the size predicted by theory) of FFD-GSF was investigated using industrial polyurethane (PU) latex beads. The carrier liquid was water containing 0.1% FL-70 (particle dispersing agent) and 0.02% sodium azide (used as bactericide). The sample loading rate was varied from about 4 to 7 L/hr with the sample concentration fixed at 0.01%. The GSF channel thickness was varied from 900 to $1300{\mu}m$. Particles exiting the GSF channel were collected and monitored by optical microscopy (OM). Sample recovery was monitored by collecting the fractionated particles on a $0.45{\mu}m$ membrane filter. It was found that FE of fraction-a was increased as the channel thickness increases, and FE of fraction-b was increased as the flow rate was increased. In all cases, the sample recovery has higher than 95%. It seems the new splitter-less FFD GSF system could become a useful tool for large scale separations of various types of micron-sized particles.

• Structural Engineering and Mechanics
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• v.74 no.3
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• pp.445-455
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• 2020

Shear lag phenomenon has long been taken into consideration in various structural codes; however, the AISC provisions have not proposed any specific equation to calculate the shear lag ratio in some cases such as fillet-welded connections of front-to-front double channel sections. Moreover, those equations and formulas proposed by structural codes are based on the studies that were conducted on riveted and bolted connections, and can be applied to single channel sections whilst using them for fillet-welded double channels would be extremely conservative due to the symmetrical shape and the fact that bending moments will not develop in the gusset plate, resulting in less stress concentration. Numerical models are used in the present study to focus on parametric investigation of the shear lag effect on fillet-welded tension connection of double channel section to a gusset plate. The connection length, the eccentricity of axial load, the free length and the thickness of gusset plate are considered as the key factors in this study. The results are then compared to the estimates driven from the AISC-LRFD provisions and alternative equations are proposed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.383-390
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• 2008

Flow pattern of cavitation around a plano-convex foil, whose shape is similar to the inducer impeller of the turbo-pumps in the liquid fuel rocket engine, was observed by using a cryogenic cavitation tunnel of blowdown type for visualization. Working fluids were liquid nitrogen and hot water. The parameter range to be varied was between 20 and 60mm for channel width, 20 and 60mm for foil chord, -1.8 and 13.2 for cavitation number, 3.7 and 19.5m/sec for averaged inlet velocity, $8.5{\times}10^4$ and $1.5{\times}10^6$ for Reynolds number, -8 and $8^{\circ}$ for angle of attack, respectively. Especially at positive angle of attack, namely, convex surface being downstream, the whole cavity or a part of the cavity on the foil surface departs periodically. Periodic cavitation occurs only in case of smaller cavitation size than twice foil chord. Cavitation thickness and length in 20mm wide channel are larger than those in 60mm due to the wall confinement effect. Therefore, periodic cavitation in 60mm wide channel easily occurs than that in 20mm. These results suggest that the periodic cavitation is controlled by not only the hydrodynamic effect of vortex shedding but also the channel wall confinement effect.

• 전기의세계
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• v.23 no.2
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• pp.55-61
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• 1974

Nature of magnetic creep phenomena in low coercive force films(Ni 80%-Fe 20%) in form of narrow channels imbedded in high coercive force films is studied in this work. Aluminium is evaporated on the hot glass substrate and eched free in the shape of narrow channels by photoetoetching method. then, Permalloy(Ni 80%, Fe 20%) is deposited on these Aluminium substrate under the uniform field of 30(Oe) to introduce anisotropy. Permalloy film on Al has a high coercive force and one on the substrate devoid of Al has how coercive force. Magnetic revers domain which is introduced at the end of channel grows under the a.c field in hard axis direction, in spite of very weak d.c field in easy axis direction. This creeping is investigated as a function of external fields and channel widths. Permalloy film thickness is 500.angs.-900.angs. and channel widths are 40, 51, 65, 81, 115.mu. respectively. Creeping increases as external field increases while it decreases with channel width decrease. Creep velocity in channels depends on the a.c field along hard axis, d.c field along easy axis and channel widths and its range is 1-10cm/sec in this experiment. From study of dependence of creep velocity on channel width, it can be concluded that creep velocity is expressed in form of v=v$_{0}$ exp .alpha.(H-H$_{0}$) where .alpha. is a function of a.c field along hard axis and H is driving d.c field along easy axis, H$_{0}$ is not a coercive force of film as usuall expected but the d.c threshold field along easy axis which is a function of channel width. This characteristic is also confirmed by the study of dependence of creep velocity upon easy axis field strength. Value of .alpha. obtained is 1.3-2.3cm/sec We depending upon film charactor, hard axis field strength and frequency.uency.

• ETRI Journal
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• v.41 no.6
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• pp.829-837
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• 2019

The p-type nanowire field-effect transistor (FET) with a SiGe shell channel on a Si core is optimally designed and characterized using in-depth technology computer-aided design (TCAD) with quantum models for sub-10-nm advanced logic technology. SiGe is adopted as the material for the ultrathin shell channel owing to its two primary merits of high hole mobility and strong Si compatibility. The SiGe shell can effectively confine the hole because of the large valence-band offset (VBO) between the Si core and the SiGe channel arranged in the radial direction. The proposed device is optimized in terms of the Ge shell channel thickness, Ge fraction in the SiGe channel, and the channel length (L_g) by examining a set of primary DC and AC parameters. The cutoff frequency (f_T) and maximum oscillation frequency (f_max) of the proposed device were determined to be 440.0 and 753.9 GHz when L_g is 5 nm, respectively, with an intrinsic delay time (τ) of 3.14 ps. The proposed SiGe-shell channel p-type nanowire FET has demonstrated a strong potential for low-power and high-speed applications in 10-nm-and-beyond complementary metal-oxide-semiconductor (CMOS) technology.