• ETRI Journal
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• v.31 no.6
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• Korean Journal of Materials Research
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• v.18 no.9
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• pp.507-510
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• 2008

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2003.04a
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• pp.69-73
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• 2003

A open section thick composite beam model is suggested in this study. In the model, the primary and secondary warping and transverse shear effects are incorporated. The rigidities associated with thick channel composite beam and thin channel composite beam are obtained and compared. The results show that the difference among rigidities of the thick and thin composite beams increase as the wall thickness increases.

• Korean Journal of Materials Research
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• v.18 no.5
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• pp.272-276
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• 2008

In submicron MOSFET devices, maintaining the ratio between the channel length (L) and the channel depth (D) at 3 : 1 or larger is known to be critical in preventing deleterious short-channel effects. In this study, n-type SOI-MOSFETs with a channel length of $0.1\;{\mu}m$ and a Si film thickness (channel depth) of $0.033\;{\mu}m$ (L : D = 3 : 1) were virtually fabricated using a TSUPREM-4 process simulator. To form functioning transistors on the very thin Si film, a protective layer of $0.08\;{\mu}m$-thick surface oxide was deposited prior to the source/drain ion implantation so as to dampen the speed of the incoming As ions. The p-type boron doping concentration of the Si film, in which the device channel is formed, was used as the key variable in the process simulation. The finished devices were electrically tested with a Medici device simulator. The result showed that, for a given channel doping concentration of $1.9{\sim}2.5\;{\times}\;10^{18}\;cm^{-3}$, the threshold voltage was $0.5{\sim}0.7\;V$, and the subthreshold swing was $70{\sim}80\;mV/dec$. These value ranges are all fairly reasonable and should form a 'magic region' in which SOI-MOSFETs run optimally.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.252-253
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• 2011

ZnO-based thin film transistors (TFTs) are of great interest for application in next generation flat panel displays. Most research has been based on amorphous indium-gallium-zinc-oxide (IGZO) TFTs, rather than single binary oxides, such as ZnO, due to the reproducibility, uniformity, and surface smoothness of the IGZO active channel layer. However, recently, intrinsic ZnO-TFTs have been investigated, and TFT- arrayss have been demonstrated as prototypes of flat-panel displays and electronic circuits. However, ZnO thin films have some significant problems for application as an active channel layer of TFTs; it was easy to change the electrical properties of the i-ZnO thin films under external conditions. The variable electrical properties lead to unstable TFTs device characteristics under bias stress and/or temperature. In order to obtain higher performance and more stable ZnO-based TFTs, HZO thin film was used as an active channel layer. It was expected that HZO-TFTs would have more stable electrical characteristics under gate bias stress conditions because the binding energy of Hf-O is greater than that of Zn-O. For deposition of HZO thin films, Hf would be substituted with Zn, and then Hf could be suppressed to generate oxygen vacancies. In this study, the fabrication of the oxide-based TFTs with HZO active channel layer was reported with excellent stability. Application of HZO thin films as an active channel layer improved the TFT device performance and bias stability, as compared to i-ZnO TFTs. The excellent negative bias temperature stress (NBTS) stability of the device was analyzed using the HZO and i-ZnO TFTs transfer curves acquired at a high temperature (473 K).

• Transactions of Materials Processing
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• v.9 no.3
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• pp.219-225
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• 2000

Equal channel angular pressing (ECAP) is a convenient forming process to extrude material without substantial changes in the sample geometry and this deformation process gives rise to produce ultrafine grained materials. The properties of the materials are strongly dependent on the plastic deformation behaviour during ECAP. The major process variables during ECAP are 1) die geometries, such as a channel angle and coner angles, and 2) the processes variables, such as lubrication and deformation speed. In this study, the plastic deformation behaviour of materials during the ECAP has been theoretically analysed by the finite element method (FEM). The effect of the die friction on the plastic deformation behaviour during the pressing is discussed by means of FEM calculations.

• Journal of The Korean Society of Agricultural Engineers
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• v.49 no.5
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• pp.3-9
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• 2007

In this study, the effect of the purification materials is analyzed and tested by Flow 3D and Hydraulic model test. Three dimension numerical analysis led from the research that sees abnormal form and the size back of the water purification material conferred the flowing water conduct inside the test channel against the test condition. Comparison it analyzed the flux distribution, a water depth of the channel which establishes the water purification materials the cross section, an interval of the water purification material, a conference with general channel, it change executed. As a result, the cross section ratio of the purification materials against and a flux change from the test which it sees. The interval of the purification materials in order to prevent three dimension that follows in decrease of increase and flux must decide an interval.

• ETRI Journal
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• v.31 no.6
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• pp.770-777
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• 2009

We have developed a fully functional reconfigurable optical add-drop multiplexer (ROADM) switch module using a polymer integrated photonic lightwave circuit technology. The polymer variable optical attenuator (VOA) array and digital optical switch array are integrated into one polymer PLC chip and packaged to form a 10-channel VOA integrated optical switch module. Four of these optical switch modules are used in the ROADM switch module to execute 40-channel switching and power equalization. As a wavelength division multiplexer (WDM) filter device, two C-band 40-channel athermal arrayed waveguide grating WDMs are used in the ROADM module. Optical power monitoring of each channel is carried out using a 5% tap PD. A controller and firmware having the functions of a 40-channel switch and VOA control, optical power monitoring, as well as TEC temperature control, and data communication interfaces are also developed in this study.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2001.10a
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• pp.91-94
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• 2001

This paper presents the analytical investigation pertaining to the local buckling behavior of orthotropic channel section compression members stiffened with unsymmetric stiffeners at its free edges. In the analysis, tile edge stiffener is modeled as a beam element or a plate element. The result of both cases is presented in graphical form so that the effects of edge stiffeners on the local buckling strength of edge stiffened channel section member can be found.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.96-99
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• 2012

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.