• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.5
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• pp.794-803
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• 1987

In this paper, the SPICE 2.G6 JFET subroutine and other related subroutines are modified for circuit simulation of GaAs MESFET IC's. The hyperbolic tangent model is used for the drain current-voltage characteristics of GaAs MESFET's and derived channel-conductance and drain-conductance model from the above current model are implemented into small-signal model of GaAs MESFET's. And, device capacitance model which consider after-pinch-off state are modified, and device charge model for SPICE 2G.6 are proposed. The result of modification is shown to be suitable for GaAs circuit simulator, showing good agreement with experimetal results. Forthermore the DC convergence of this paper is better than that of SPICE 2.G JFET subroutine. GaAs MESFET model in this paper is applied for both depletion mode GaAs MESFET and enhancement-mode GaAs MESFET without difficulty.

• Membrane and Water Treatment
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• v.3 no.2
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• pp.77-98
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• 2012

A two-dimensional (2D) steady state numerical model of concentration polarisation (CP) phenomena in a membrane channel has been developed using the commercially available computational fluid dynamics (CFD) package CFX (Ansys, Inc., USA). The model incorporates the transmembrane pressure (TMP), axially variable permeate flux, variable diffusivity and viscosity, and osmotic pressure effects. The model has been verified against several benchmark analytical and empirical solutions from the membrane literature. Additionally, the model is able to predict the rejection of an arbitrary solute by the membrane using a pore model, given some basic knowledge of the geometry of the solute molecule or particle, and the membrane pore geometry. This allows for predictive design of membrane systems without experimental determination of the membrane rejection for the specified operating conditions. A demonstration of the model is presented against experimental results for two uncharged test compounds (sucrose and PEG1000) from the literature. The model will be extended to incorporate charge effects, transient simulations, three-dimensional (3D) geometry and turbulent effects in future work.

• Journal of Information Display
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• v.6 no.4
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• pp.6-10
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• 2005

The dependence of hysteresis characteristics in low temperature poly-Si (LTPS) thin film transistors (TFTs) on the gate-source voltage (Vgs) or the drain-source voltage (Vds) bias is investigated and discussed. The hysteresis levels in both p-type and n-type LTPS TFTs are independent of Vds bias but increase as the sweep range of Vgs increases. It has been found that the hysteresis in both p-type and n-type LTPS TFTs originated from charge trapping and de-trapping in the channel region rather than at the source/drain edges.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.63-69
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• 2001

Holographic transmission gratings were performed by an Ar-laser( ${\lambda}$=514nm) intensity, the ratio fo LC contents to the surfactant. The addition of the surfactant to the LC and pre-polymer systems causes the droplet to maintain the ideal size at the high fraction(over 40wt%) of the LC contents that induce the films to be fabricated with high diffraction efficiency than that of no surfactant series. The image of these films was examined using a charge coupled device (CCD). We also studied the angular selectivity plots which support the important role in the multiplexer channel (MUX). Eventually, we showed the reconstructive optical image recorded in this transmission mode of HPDLCs.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.367-372
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• 1999

We have investigated the effects of electrical stress on poly-Si TFTs with different hydrogen passivation conditions. The amounts of threshod voltage shift of hydrogen passivated poly-Si TFTs are much larger than those of as-fabricated devices both under the gate only and the gate and drain bias stressing. Also, we have quantitatively analyzed the degradation phenomena by analytical method. We have suggested that the electron trapping in the gate dielectric is the dominant degradation mechanism in only gate bias stressed poly-Si TFT while the creation of defects in the channel region and $poly-Si/SiO_2$ interface is prevalent in gate and drain bias stressed device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.491-495
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• 2017

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.70-71
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• 2007

Analyzing pentacene field effect transistors (FETs) with Au source and drain electrodes as Maxwell-Wagner effect elements, electron and hole injection from the Au electrodes into the FET channel were examined using current-voltage (I-V), capacitance-voltage (C-V) and optical second harmonic generation (SHG) measurements. Based on these results, a mechanism of the hole and electron injection into pentacene from the Au electrodes and subsequently recombination mechanism with light-emitting in the pentacene layer are discussed, with taking into account the presence of trapped charges.

• Bulletin of the Korean Chemical Society
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• v.21 no.8
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• pp.823-827
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• 2000

Gas-Phase reactions of methyl and ethyl nitrites with anionic nucleophiles of SH-, F- and OH- are investigated theoretically at the MP2/6-311+G* level. The SN2 processes are all highly exothermic and proceed with a typ-icaI double-weIl reaction coordinate profile. The elimination reactions of methyl nitrite with SH- and F- are double-well energy surface processes,with stabilizedproduct complexes of NO-...H2S and NO-...HF, pro-ceeding by an E1 cb-like E2 mechanism. The $\beta-elimination$ of ethyl nitrite is an E2 type process. The $\alpha-elimi-nation$ reactions of methyl and ethyl nitrites with OH- have triple-well energy profiles of Elcb pathway with an $\alpha-carbanion$ intermediate which is stabilized bythe vicinal $nc\alpha-{\sigma}*o-N$ charge transfer interactions. CompIex-ation ofmethyl carbanion with HF seems to provide a stable intermediate within a triple-well energy profile of El cb channel in the reaction of F- with methyl nitrite.

• Applied Chemistry for Engineering
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• v.30 no.2
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• pp.133-140
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• 2019

Two-dimensional (2D) ultrathin molybdenum dichalcogenides $MoS_2$ has gained a great deal of attention in energy conversion and storage applications because of its unique morphology and property. The 2D $MoS_2$ nanosheets provide a high specific surface area, 2D charge channel, sub-nanometer thickness, and high conductivity, which lead to high electrochemical performances for energy storage devices. In this paper, an overview of properties and synthetic methods of $MoS_2$ nanosheets for applications of supercapacitors and rechargeable batteries is introduced. Different phases triangle prismatic 2H and metallic octahedral 1T structured $MoS_2$ were characterized using various analytical techniques. Preparation methods were focused on top-down and bottom-up approaches, including mechanical exfoliation, chemical intercalation and exfoliation, liquid phase exfoliation by the direct sonication, electrochemical intercalation exfoliation, microwave-assisted exfoliation, mechanical ball-milling, and hydrothermal synthesis. In addition, recent applications of supercapacitors and rechargeable batteries using $MoS_2$ electrode materials are discussed.

• International Journal of Computer Science & Network Security
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• v.22 no.4
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• pp.394-400
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• 2022

The radio resources available in a wireless network system are limited. Therefor, job of managing resources is not easy task. Because the resources are shared among the UEs that are connected, the process of assigning resources must be carefully controlled. The packet scheduler in an LTE network is in charge of allocating resources to the user equipment (UE). Femtocells networks are being considered as a promising solution for poor channel performance for mulitple environments. The implementation of femtocells into a macrocell (traditional base station) would boost the capacities of the cellular network. To increase femtocells network capacity, a reliable Packet Scheduler mechanism should be implemented. The Packet Scheduler technique is introduced in this paper to maximize capacity of the network while maintaining fairness among UEs. The proposed solution operates in a manner consistent with this principle. An analysis of the proposed scheme's performance is conducted using a computer simulation. The results reveal that it outperforms the well-known PF scheduler in terms of cell throughput and average throughput of UEs.