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http://dx.doi.org/10.4313/JKEM.2017.30.8.491

Characterization of Solution-Processed Oxide Transistor with Embedded Electron Transport Buffer Layer  

Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University)
Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.30, no.8, 2017 , pp. 491-495 More about this Journal
Abstract
We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.
Keywords
Thin films; Sol-gel; Surface; Electrical; Indium-zinc oxide TFTs;
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