• 한국전기전자재료학회논문지
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• 제16권6호
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• pp.477-483
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• 2003

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.151-157
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• 2023

Integrating dielectric materials into LTCC is a convenient method to increase the integration density in electronic circuits. To enable co-firing of the high-k and low-k dielectric LTCC materials in a multi-material hetero-laminate, the shrinkage characteristics of both materials should be similar. Moreover, thermal expansion mismatch between materials during co-firing should be minimized. The alternating stacking of an LTCC with silica filler and that with calcium-zirconate filler was observed to examine the use of the same glass in different LTCCs to minimize the difference in shrinkage and thermal expansion coefficient. For the LTCC of silica filler with a low dielectric constant and that of calcium zirconate filler with a high dielectric constant, the amount of shrinkage was examined through a thermomechanical analysis, and the predicted appropriate fraction of each filler was applied to green sheets by tape casting. The green sheets of different fillers were alternatingly laminated to the thickness of 500 ㎛. As a result of examining the junction, it was observed through SEM that a complete bonding was achieved by constrained sintering in the structure of 'calcium zirconate 50 vol%-silica 30 vol%-calcium zirconate 50 vol%'.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.41-44
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• 1998

(1-X)LTC-XHTC composites were manufactured with the variation of X in the range of 0.3 $\leq$X $\leq$0.6 and its dielectric properties were investigated. Here, LTC and HTC are PZN-BT-PT -based ceramics with quire temperature(Tc) of 100。 C-3$0^{\circ}C$, respectively. 0.6HTC-0.4LTC composite ceramics show excellent values of $\Delta$$\varepsilon$$_{r}$/$\varepsilon$[%] which were -7.1% at -2$0^{\circ}C$ and -12% at 5$0^{\circ}C$, respectively. It is thought that composite ceramics with above results can be applied to electrostrictive actuator, high voltage ceramic capacitor etc.mic capacitor etc.r etc.c.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.259-259
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• 2007

The low temperature sintering of dolomite type borates, $CaZr(BO_3)_2$[CZB] ceramics and their microwave dielectric properties were investigated The sintering temperature of CZB ceramics could be reduced from $1150^{\circ}C$ to $925^{\circ}C$ by the addition of sintering additive. $CaZrO_3$, $ZrO_2$ and $CaB_2O_4$ second phases were found in the CZB ceramics. The syntheses, sintering properties, microstructures, and dielectricnproperties of dolomite-type borates were examined by XRD, thermal analysis, electron microscopy, network analyzer, and the results are discussed intensively. The compatibility with silver electrode was also explored.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.771-775
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• 2010

In this study, piezoelectric and dielectric properties of the $(Na_{0.5}K_{0.5})NbO_3-(1-x)(Bi_{0.5}Na_{0.5})TiO_3-xBaTiO_3$ [NKN-(1-x)BNT-xBT] ceramics were investigated. The lead-free NKN-(1-x)BNT-xBT ceramics were fabricated by a conventional mixed oxide method. The results indicate that the addition of $BaTiO_3$ significantly influences the sintering, microstructure, phase transition and electrical properties of NKN-BNT ceramics. A gradual change in the piezoelectric and dielectric properties was observed with the increase of BT contents. The dielectric constant, piezoelectric constant ($d_{33}$) and electromechanical coupling factor ($k_p$) increased at the morphotropic phase boundary (MPB). The $d_{33}$=184 pC/N, $k_p$=0.38, dielectric constant=1455 with dielectric loss value of less than 1% were obtained for the NKN-0.95BNT-0.05BT ceramics sintered at $1150^{\circ}C$ for 2h. These results demonstrate that the NKN-(1-x)BNT-xBT ceramics is an attractive candidate for lead-free piezoelectric materials.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

• 한국전기전자재료학회논문지
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• 제15권7호
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• pp.597-601
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• 2002

In this study, the structural, dielectric and piezoelectric properties of $Pb[(Ni_{1/3}Nb_{2/3})_x-(Mn_{1/3}Nb_{2/3})_{0.09-x}-(Zn_{0.505}Ti_{0.495)_0.91]O_3$ (x=0, 0.01, 0.02, 0.03, 0.04, 0.05) system ceramics were investigated to develop the composition ceramics for piezoelectric transformer. All the specimens were sintered at $1250^{\circ}C$ and its physical properties were measured, and the results are as follows : With increasing PNN substitution for PMN-PZT system, dielectric constant was increased and electro-mechanical coupling factor($k_p$) was increased to 0.62 at 5 mol% while mechanical quality factor(Qm) was decreased.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.538-542
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• 2005

The structural and microwave dielectric properties of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics with sintering temperature were investigated. All the sample of the $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were prepared by conventional miked oxide method and the sintering temperature was $1425\~1500^{\circ}C$. The hexagonal phase of $Mg_4Ta_2O_9$ and the cubic phase of $SrTiO_3$ were coexisted. The porosity of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics were reduced with increasing sintering temperature. In the case of $0.7Mg_4Ta_2O_9-0.3SrTiO_3$ ceramics sintered at $1475^{\circ}C$, dielectric constant, quality factor and temperature coefficient of resonant frequency were 14.51, 82,596 GHz and $-3.14\;ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.268-269
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• 2007

In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.662-665
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• 2002

The microwave dielectric properties and the microstructures of $Tm_2O_3$-modified $BiNbO_4$ ceramics were investigated. $Bi_{(1-x)}Tm_xNbO_4$ ceramics combined with orthorhombic and triclinic phases were identified at sintering temperatures of $920{\sim}960^{\circ}C$. The apparent density decreased slightly with the increasing Tm content. Regardless of the Tm content the dielectric constant $(\varepsilon_r)$ of all compositions except x=0.1 in $Bi_{(1-x)}Tm_xNbO_4$ ceramics saturated at the range of 42~44. The $Q{\times}f_0$ values of 6,000-12,000(GHz) were obtained for all compositions when the sintering temperatures were in the range of $920{\sim}960^{\circ}C$. The temperature coefficient of the resonant frequency$(\tau_f)$ can be also adjusted with increasing the amount of the doped Tm from a positive value of $+15ppm/^{\circ}C$ to a negative value of $-20ppm/^{\circ}C$. The $Bi_{(1-x)}Tm_xNbO_4$ ceramics can be possibly applied to multilayer microwave devices with low processing temperatures.