• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.429-434
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• 2015

This study investigates the macroscopic wear behaviors of C/C and C/C-SiC composites coated with hafnium carbide (HfC). To improve the wear resistance of C/C composites, low-pressure chemical vapor deposition (LPCVD) was used to obtain HfC coating. The CVD coatings were deposited at various deposition temperatures of 1300, 1400, and $1500^{\circ}C$. The effect of the substrate material (the C/C substrate, the C/C-CVR substrate, or the C/C-SiC substrate deposited by LSI) was also studied to improve the wear resistance. The experiment used the ball-on-disk method, with a tungsten carbide (WC) ball utilized as an indenter to evaluate the wear behavior. The HfC coatings were found to effectively improve the wear resistance of C/C and C/C-SiC composites, compared with the case of a non-coated C/C composite. The former showed lower friction coefficients and almost no wear loss during the wear test because of the presence of hard coatings. The wear scar width was relatively narrower for the C/C and C/C-SiC composites with hafnium coatings. Wear behavior was found to critically depend on the deposition temperature and the material. Thus, the HfC-coated C/C-SiC composites fabricated at deposition temperatures of $1500^{\circ}C$ showed the best wear resistance, a lower friction coefficient, and almost no loss during the wear test.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.365-371
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• 2019

In this study, the flame temperature distribution of the diffusion flame burner for SiO₂ deposition was analyzed by the computational fluid analysis. This corresponds to the previous step for simulating the SiO₂ preform deposition process for manufacturing optical fibers using environmentally friendly raw materials. In order to model premixed combustion, heat flow, convection, and chemical reactions were considered, and Reynolds-averaged Navier-Stokes equations and k-ω models were used. As a result, the temperature distribution of the flame showed a tendency to increase the distance from the nozzle surface to the maximum temperature when the flow rate of the auxiliary oxygen increased. In addition, it was confirmed that the temperature distribution due to incomplete combustion was large in the combustion reaction with a large equivalence ratio of the mixed gas.

• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.137-140
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• 2017

A $TiO_2$ nanofilm was deposited on ${\alpha}-Fe_2O_3$ nanopowders using the atomic layer deposition method. The $TiO_2$ film was prepared at $300^{\circ}C$ using $Ti(N(CH_3)_2)_4$ and $H_2O$ as the precursor and reactant gas, respectively. The thickness and composition of the $TiO_2$ surface were characterized by TEM and EDS measurements. The TEM results showed that the growth rate of the film was about $0.12{\AA}/cycle$. The EDS and SAED analyses showed the presence of titanium oxide on the surface of the ${\alpha}-Fe_2O_3$ nanopowders, confirming the deposition of the $TiO_2$ nanofilm. The Zeta potential and sedimentation test results showed that the dispersibility of the coated nanopowders was higher than that of the uncoated nanopowders. This is attributed to the electrostatic repulsion between the $TiO_2$-coated layers on the surface of the ${\alpha}-Fe_2O_3$ nanopowders. The results revealed that the $TiO_2$-coated layers modified the surface characteristics of the ${\alpha}-Fe_2O_3$ nanopowders and improved their dispersibility.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.3
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• pp.291-302
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• 2004

The CuO/$3AL_2O_3{\cdot}2SiO_2$ catalyst impregnated ceramic candle filters for nitrogen oxides removal were prepared by porous mullite($3AL_2O_3{\cdot}2SiO_2$) support and CuO catalyst deposited on this support to achieve uniformly dispersed CuO deposition, which are impregnated into the pores of available alumino-silicate ceramic candle filter. The CuO/3$AL_2O_3{\cdot}2SiO_2$ catalyst impregnated ceramic candle filters were characterized by XRD, BET, air permeability, pore size, SEM and catalytic tests in the reduction of NOx by NH$_3$. The observed effects of CuO/3$AL_2O_3{\cdot}2SiO_2$ impregnated ceramic candle filters in SCR reaction are as follows : (1) when the content of CuO catalyst increased further, activity of NO increased. (2) NO conversion at first increased with temperature and then decreased at high temperatures (above 40$0^{\circ}C$), possibly due to the occurrence of the ammonia oxidation reaction. (3) In pilot plant test for 3 months, NO conversion was greater than 90%.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.67-72
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• 2013

Temperature is a critical parameter in yield improvement for wafer manufacturing. In chemical vapor deposition (CVD) equipment, crack defect in ceramic heater leads to yield reduction, however, there is no suitable ceramic heater fault detection system for conventional CVD equipment. This paper proposes a short-time zero-crossing rate based fault detection method for the ceramic heater in CVD equipment. The proposed method measures the output signal ($V_{pp}$) of RF filter and extracts the zero-crossing rate (ZCR) as feature vector. The extracted feature vectors have a discriminant power and Gaussian mixture model (GMM) based fault detection method can detect fault in ceramic heater. Experimental results, carried out by measured signals provided by a CVD equipment manufacturer, indicate that the proposed method detects effectively faults in various process conditions.

• Membrane Journal
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• v.31 no.1
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• pp.80-85
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• 2021

In this study, we developed an evaporation-driven self-assembly coating method for an ceramic intermediate layer on an ultrapermeable ��-Al2O3 support with large pore size of ~1.5 ㎛. The method led to the formation of a ceramic intermediate layer with higher surface homogeneity and less surface roughness than the conventional dip-coating method. A mesoporous ��-Al2O3 layer was deposited on the support to evaluate support quality. A supported ��-Al2O3 membrane was defect-free even without repeated coating. Furthermore, the membrane showed 2.3 times higher nitrogen permeance than one prepared on a macroporous support with pore size range of 100~200 nm, which is widely used for ceramic membrane coating.

• Journal of computational fluids engineering
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• v.18 no.3
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• pp.67-71
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• 2013

Recently, the rapid development of the semiconductor industry induces the prompt technical progress in the area of device integration and the application of large diameter wafers for the price competitiveness. As a result of the usage of large wafers in the semiconductor industry, the silicon carbide components which have layers of silicon carbide on graphite or RBSC substrates is getting widely used due to the advantages of SiC such as high hardness and strength, chemical and ionic resistant to all the environments superior than other ceramic materials. For the uniform and homogeneous deposition of silicon carbide on these huge components, it needs to know about the gas flow in the CVD reactor, not only for the delicate adjustment of the process variables but more essentially for the cost reduction for the shape change of specimens and their holders on the stage of reactor. In this research, the CFD simulation is challenged for the prediction of the inner distribution of the gas velocity. Chemical reaction simulation is used to predict the distribution of concentration of the reacting gas with the rotating velocity of the stage. With the increase of the rotating speed, more uniform distribution of the reacting gas on the surface of the stage was obtained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.6
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• pp.528-533
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• 2019

We investigated the growth of $(Al_xGa_{1-x})_2O_3$ thin films on c-plane sapphire substrates that were grown by mist chemical vapor deposition (mist CVD). The precursor solution was prepared by mixing and dissolving source materials such as gallium acetylacetonate and aluminum acetylacetonate in deionized water. The [Al]/[Ga] mixing ratio (MR) of the precursor solution was adjusted in the range of 0~4.0. The Al contents of $(Al_xGa_{1-x})_2O_3$ thin films were increased from 8 to 13% with the increase of the MR of Al. As a result, the optical bandgap of the grown thin films changed from 5.18 to 5.38 eV. Therefore, it was determined that the optical bandgap of grown $(Al_xGa_{1-x})_2O_3$ thin films could be effectively engineered by controlling Al content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.4
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• pp.412-417
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• 2022

Capacitive-type humidity sensors with a high sensitivity and fast response/recovery times have attracted a great attention in non-contact respiration biological signal monitoring applications. However, complicated fabrication processes involving high-temperature heat treatment for the hygroscopic film is essential in the conventional ceramic-based humidity sensors. In this study, a non-toxic ceramic/metal halide (BaTiO₃(BT)/NaCl) humidity sensor was prepared at room temperature using a solvent-free aerosol deposition process (AD) without any additional process. Currently prepared BT/NaCl humidity sensor shows an excellent sensitivity (245 pF/RH%) and superior response/recovery times (3s/4s) due to the NaCl ionization effect resulting in an immense interfacial polarization. Furthermore, the non-contact respiration signal variation using the BT/NaCl sensor was determined to be over 700% by maintaining the distance of 20 cm between the individual and the sensor. Through the AD-fabricated sensor in this study, we expect to develop a non-contact biological signal monitoring system that can be applied to various fields such as respiratory disease detection and management, infant respiratory signal observation, and touchless skin moisture sensing button.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.6
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• pp.233-239
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• 2021

In this study, Ga₂O₃/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga₂O₃ materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga₂O₃ layer was grown in the growth temperature range of from 450~600℃ by mist chemical vapor deposition. We found that layer separation happens at the Ga₂O₃/diamond interface at the growth temperature of 500℃. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing the thermal properties at Ga₂O₃/diamond interface.