APPLICATION OF CFD SIMULATION IN SIC-CVD PROCESS |
Kim, J.W.
(Icheon Branch, Korea Institute of Ceramic Eng. & Tech)
Han, Y.S. (Icheon Branch, Korea Institute of Ceramic Eng. & Tech) Choi, K. (Icheon Branch, Korea Institute of Ceramic Eng. & Tech) Lee, J.H. (Dept. of Ceram. Sci. & Eng., Korea Univ.) |
1 | 2012, Lee, J.H., "Analysis on Development Process of Semiconductor Industry and Competitiveness of Semiconductor Equipment Industry in Korea," Thesis for Degree of Master, Gyunggi University, Suwon, Korea. |
2 | 1997, Hallin, C., "The material quality of CVD-grwon SiC using different carbon precursors," J. Crystal Growth., Vol.183, pp.163-174. |
3 | 1986, Kim, H.J. and Davis, R.F., "Theoretically predicted and experimentally determined effects of the Si/(Si+C) gas phase ratio on the growth and character of monocrystalline beta silicon carbide films," J. Appl. Phys., Vol.60, p.2897. DOI |
4 | 2007, Cho, K.S., Yoon, S.H., Chae, S.H., Kim, Y.W. and Park, S.H., "SiC Materials Techniques for Semiconductor Production Line," Ceramist., Vol.10, pp.33-48. |
5 | 2011, Kim, J.W., Kim, H.T., Kim, K.J., Lee, J.H. and Choi, K., "Application of 3-dimensional phase-diagram using Factsage in C3H8-SiCl4-H2 system," J. Kor. Ceram. Soc., Vol.48, pp.621-624. 과학기술학회마을 DOI ScienceOn |
6 | 2012, Choi, K. and Kim, J.W., "Thermodynamic comparison of silicon carbide CVD process between CH3SiCl3-H2 and C3H8-SiCl4-H2 systems," Kor. J. Met. Mater., Vol.50, pp.569-573. DOI |
7 | In press, Choi, K. and Kim, J.W., "CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in CH3SiCl3-H2 System," Current Nanoscience. |
8 | 2012, Leone, S., Kordina, O., Henry, A., Nishizawa, S., Danielsson, O. and Janzen, E., "Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide," Cryst. Growth Des., pp.1977-1984. |