• 한국재료학회지
• /
• 제29권9호
• /
• pp.547-552
• /
• 2019

In the present study, the thermal conductivity of a silicon nitride($Si_3N_4$) thin-film is evaluated using the dual-wavelength pump-probe technique. A 100-nm thick $Si_3N_4$ film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film's thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

• 한국재료학회지
• /
• 제31권10호
• /
• pp.546-551
• /
• 2021

To improve ferroelectric properties of PZT, many studies have attempted to fabricate dense PZT films. The AD process has an advantage for forming dense ceramic films at room temperature without any additional heat treatment in low vacuum. Thick films coated by AD have a higher dielectric breakdown strength due to their higher density than those coated using conventional methods. To improve the breakdown strength, glass (SiO₂-Al₂O₃-Y₂O₃, SAY) is mixed with PZT powder at various volume ratios (PZT-xSAY, x = 0, 5, 10 vol%) and coating films are produced on silicon wafers by AD method. Depending on the ratio of PZT to glass, dielectric breakdown strength and energy storage efficiency characteristics change. Mechanical impact in the AD process makes the SAY glass more viscous and fills the film densely. Compared to pure PZT film, PZT-SAY film shows an 87.5 % increase in breakdown strength and a 35.3 % increase in energy storage efficiency.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.239-240
• /
• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제1권4호
• /
• pp.202-208
• /
• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• 마이크로전자및패키징학회지
• /
• 제27권3호
• /
• pp.77-81
• /
• 2020

차세대 디스플레이 시장을 선도하기 위해서는 롤러블(rollable), 폴더블(foldable) 디스플레이와 같은 플렉서블(flexible) OLED 디스플레이의 상용화 및 양산화가 필수적이나, 실제 공정 및 굽힘 과정에서 발생하는 극심한 박막 내부 응력 변화로 인한 기계적 파손 문제가 심각한 상황이다. 따라서, 플렉서블 디스플레이 구조에 사용되는 박막 재료의 기계적 물성을 파악하는 것은 제품의 강건한 설계 및 구조 최적화에 필수적이다. 본 논문에서는 물 표면 플랫폼을 이용한 나노 박막 인장 시험법을 적용하여 플렉서블 디스플레이 패널에 적용되는 금속 및 세라믹 박막 소재들의 인장 물성을 정량적으로 측정하였다. 스퍼터링(Sputtering)으로 증착된 Mo, MoTi 나노 박막과, 플라즈마 강화 화학 기상 증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)으로 증착된 SiN_x 나노 박막의 탄성 계수와 인장 강도 및 연신율을 측정하는 데 성공하였다. 결과적으로 박막의 증착 조건 및 두께에 따라 기계적 물성이 크게 변화할 수 있음을 확인하였으며, 측정된 인장 물성은 기계적으로 강건한 롤러블, 폴더블 디스플레이의 설계를 위한 응력 해석 모델링 데이터로 활용될 수 있을 것으로 기대한다.

• 한국세라믹학회지
• /
• 제43권2호
• /
• pp.98-105
• /
• 2006

YBCO film was synthesized by using a new approach to the TFA-MOD method. In the fabrication process, $Y_2Ba_1Cu_1O_x\;and\;Ba_3Cu_5O_8$ powders were used as precursors (the so called '211 process'), instead of Y-, Ba-, and Cu-based acetates, and dissolved in trifluoroacetic acid followed by calcining and firing heat treatment. Consequently, we successfully fabricated YBCO film and evaluated the phase formation, texture evolution, and critical properties as a function of the calcining and firing temperature and humidity, in order to explore its possible application in coated conductor fabrication. The films were calcined at $430-460^{\circ}C$ and then fired at $750-800^{\circ}C\;in\;a\;0-20\%$ humidified $Ar-O_2$ atmosphere. We observed that $BaF_2$ phase was effectively reduced and that a sharp and strong biaxial texture formed under humidified atmosphere leading to increased critical properties. In addition, we found that the microstructure varied significantly with the firing temperature: the grain grew further, the film became denser, and the degree of texture and phase purity varied as the firing temperature increased. For the film fired at $775^{\circ}C$ after calcining at $460^{\circ}C$, the critical current was obtained to be 39 A/cm-width (corresponding critical current density is $2.0\;MA/cm^2$ which was probably attributed to such factors as the enhanced phase purity and out-of-plane texture, the moderate film density and grain size, and crack-free surface.

• 한국세라믹학회지
• /
• 제41권6호
• /
• pp.450-455
• /
• 2004

NiCr 합금을 열증발원으로 사용한 thermal evaporation법으로 NiCr박막을 $Al_2$O$_3$/Si 기판 위에 증착시켰다. 이 때 동일한 량의 NiCr 합금을 1회에 모두 증착하는 방법과, l/2씩 2회 증착하는 방법으로 NiCr 박막을 각각 증착시켜, 박막의 미세구조에 따른 막의 특성변화를 고찰하였으며, 열처리 온도에 따른 NiCr 박막의 상 변화, 조성변화 및 미세구조 변화를 XRD, AES 및 FE-SEM으로 각각 분석하였다. 열처리 과정에서 박막내부에 존재하는 Cr 성분이 표면 쪽으로 확산하여 산화됨으로써 Cr산화층/Ni 층/Cr 산화층의 전형적인 다층구조를 형성함을 알 수 있었으며, 특히, $700^{\circ}C$ 이상에서는 Ni 층이 Cr산화층을 통하여 표면 쪽으로 확산됨으로써 표면에 원주형 결정립을 가지는 NiO 층을 형성하였다. 특히 Ni 층이 확산 전의 구조를 유지한 채 표면에 추가적인 NiO층이 형성되는데, 이는 형성된 Cr산화층의 확산이 상대적으로 Ni 층에 비하여 어려운데 기인한다.

• 한국진공학회지
• /
• 제15권1호
• /
• pp.110-116
• /
• 2006

본 연구에서는 나노 두께를 갖는 두 층을 반복적으로 증착하여 나노 다층 구조를 갖는 질화 물이 코팅된 절삭공구의 기계적 성능과 절삭성능의 향상에 대해 고찰하였다. 이러한 질화물계 나노 다층막에 대한 재료는 격자상수와 결정구조에 따라 $Ti_{0.54}Al_{0.46}N-CrN$계와 $Ti_{0.84}Al_{0.16}N-NlN$계를 선택하여, UBM sputtering 증착법을 이용하여 초경(WC-Co) 인서트(insert)위에 증착하였다. 공정 변수들인 증착온도, 압력. 기판 바이어스 전압, 기판회전 속도 등을 조절하여 다른 주기 값을 갖는 일정한 두께의 다층막들을 증착 시켰고, 주기에 따른 초격자 형성, 경도 값과 절삭성능을 관찰하였다. 증착된 다층막들은 그 주기 값에 따라 경도 값이 다르게 나타났으며. 경도 값이 상대적으로 높았던 특정 주기의 다층막이 코팅된 절삭 공구의 경우, 기존의 상용화된 제품에 비해 frank wear로 비교한 절삭 성능이 $20\%$이상 향상됨을 관찰하였다

• 한국세라믹학회지
• /
• 제42권4호
• /
• pp.245-250
• /
• 2005

단결정 사파이어 (0001) 기판 위에 저가의 초산아연(Zinc Acetate Dehydrate; ZAH) 전구체를 이용하여 초음파 열분해법과 Ar 가스를 이용한 ZnO 박막을 성장시켰다. Thermogravimetry-Differential Scanning Calorimetry(TG-DSC) 초산아연의 열분해 과정을 조사하여 $380^{\circ}C$ 이상에서 ZnO로 분해되는 것을 확인하였다. $380-700^{\circ}C$에서 증착된 ZnO 박막은 모두 ZnO (002), (101) 결정면으로 부터의 회절피크를 보여주고 있었으며, $400^{\circ}C$ 박막의 경우 c-압축 스트레인 ${\Sigma}Z=0.2\%$, 압축 응력 $\sigma=-0.907\;GPa$이 작용하고 있음을 알 수 있었다. 전자 현미경을 이용한 미세 구조의 관찰을 통하여 $380-600^{\circ}C$에서는 초산아연과 ZnO 초미세 입자가 혼합된 aggregate 형태의 결정립을 형성하고 있었으며, nanoblade 형태의 미세구조를 보였다. 한편 $700^{\circ}C$에서 증착된 박막내의 결정립은 찌그러진 육방정계의 형태를 취하고 있으며, 10-25nm 정도의 부결정림 초미세 ZnO 입자로 이루어져 있음을 알 수 있었다. 초미세 입자의 형성을 임의 핵형성 기구(random nucleation mechanism)로 설명하였고, photoluminescence(PL) 측정을 통하여 광 특성을 조사하였다.

• 한국세라믹학회지
• /
• 제42권1호
• /
• pp.28-32
• /
• 2005

이중 이온빔 스퍼터링(Dual ion-Beam Sputtering, DIBS)과 단일 이온빔 스피터링(Single ion-Beam Sputtering, SIBS)을 사용하여 기판의 온도와 보조 이온빔 에너지 변화에 따라 $Ta_{2}O_{5}$ 박막의 광학적 특성과 박막에 존재하는 응력의 변화에 과해 관찰하였다. SIBS 방법에 의해 증착되어진 박막의 굴절률은 150^{circ}C$에서 최고 2.144를 나타내었으며, $150^{circ}C$ 이상에서는 감소하였다. DIBS 방법에 의해 증착된 732린 박막은 기판의 온도가 증가함에 따라 $200^{circ}C$에서 최고 2.117의 굴절률을 나타내었다. $100^{circ}C$ 미만의 저온 DIBS 증착은 박막에 존재하는 응력을 낮추었으나 100^{circ}C 이상의 고온 증착시에는 박막에 존재하는 응력이 켰다. 보조 이온빔 어시스트 한 경우, 보조 이온빔 에너지가 250V에서 350V로 증가함에 따라 증착된 T놀달 박막의 굴절률은 2.185로 증가하였으나, $350\~650V$인 구간에서는 굴절률이 감소하는 경향을 나타냈다. 또한, 보조 이온빔 에너지가 증가함으로써 박막에 존재하는 응력이 감소하여 650 V에서 0.1834 GPa를 나타내었다.