• The Korean Journal of Ceramics
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• 제3권1호
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.207-210
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• 1999

The objective of this study Is to deposited the preparation of SrTiO$_3$3 dielectric thin films on Ag/barrier-mater/Si(N-type 100) bottom electrode using a conventional rf-magnetron sputtering technique with a ceramic target under various conditions. It is demonstrated that the leakage current of films are strongly dependent on the atmosphere during deposition and the substrate temperature. The resistivity properties of films deposited on silicon substrates were very high resistivity. Capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature.

• Bulletin of the Korean Chemical Society
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• 제31권4호
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• pp.798-802
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• 2010

From time-resolved optical emission spectra, we have investigated the effects of a transverse magnetic field on the expansion of a plasma plume produced by laser ablation of a ZnO:$P_2O_5$ ceramic target in oxygen active atmosphere. The emission spectra of $Zn^{+*}$, $P^{+*}$, and $Zn^*$ neutrals in the presence of magnetic field turn out to be considerably different from those without magnetic field. The characteristics of the deposited films grown on amorphous fused silica substrates by pulsed laser deposition (PLD) are examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV-visible spectra.

• 한국기계가공학회지
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• 제10권6호
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• pp.1-8
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• 2011

Recently, super heat-resistant alloy Inconel 600 come into spotlight as the material of airplane parts but this material causes lots of problems that is, reduction of machinability and attritious wear and breakage of cutting tool during turning processing due to high temperature strength and cohesion between tool material and Inconel 600. Therefore, in this study, it was purposed to determine tool material kind and to select of proper cutting range when turning process was carried out for Inconel 600. In order to these Purpose, coated carbide tool and ceramic tool was used in this experiment and the machinability of Inconel 600 was investigated from perspective of the cutting force, chipping and wear of tool and deposition phenomenon of chip.

• 반도체디스플레이기술학회지
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• 제11권3호
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.33-35
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• 2000

Na-K-Nb system showed a number of ferroelectric phases in bulk ceramic. [001]-axis oriented single-phase Na$_{0.5}$K$_{0.5}$NbO$_3$ (NKN) thin film have been grown on LaA1O$_3$ substrates using KrF excimer laser. X-ray diffraction $\theta$-2$\theta$ scan, rocking curves, and $\phi$ scan data evidence highly c-axis oriented along the [001] direction.ion.

• 한국표면공학회지
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• 제39권4호
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• pp.147-152
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• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.322-332
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• 2022

Energy storage capacitors based on dielectric ceramics with superior polarization properties and dielectric constant can provide much higher output power density due to their very fast energy charging/discharging rates, which are particularly suitable for operating pulsed-power devices. For an outstanding energy storage performance of dielectric capacitor, a large recoverable energy density could be derived by introducing a slim polarization-electric field hysteresis loop into dielectric materials by various technical approaches. Many research teams have explored various dielectric capacitor technologies to demonstrate high output power density and ultrafast charging/discharging behavior. This article reviews the recent research progress in high-performance dielectric capacitors for pulsed-power electronic applications.

• 공업화학
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• 제10권6호
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• pp.843-847
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• 1999

본 연구에서는 유동층-화학증기침투에 의해 이염화이메틸규소(DDS)와 수소로부터 생성된 탄화규소를 활성탄에 증착시킨 세라믹 탄소/탄화규소복합체가 제조되었다. 4~12, 12~20, 20~40 mesh의 활성탄이 사용되었다. 증착 후 반응물인 이염화이메틸규소의 농도, 활성탄의 크기, 반응압력, 반응시간에 따른 반응후 각 시료의 표면적과 증착량 및 증착양상을 관찰하였다. 실험결과 DDS의 농도가 낮고 반응압력이 작을수록 시료 기공내에 고른 증착을 갖는 것을 알 수 있었다. 또한 기공직경과 표면적들이 어떠한 시점에서 최소값을 갖는 것으로 기공내부 증착에서 입자외부 표면 증착으로 바뀜을 알 수 있었다. DDS의 농도가 낮고 반응압력이 낮을 때 작은 탄화규소입자가 활성탄 표면에 더욱 고르게 증착되었다. 이 결과들은 SEM, TGA, 기공도측정장치, BET에 의해 확인되었다.