• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.441-448
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• 2015

Silicon carbide (SiC) coatings for tri-isotropic (TRISO) nuclear fuel particles were fabricated using a chemical vapor deposition (CVD) process onto graphite. A micro-tensile-testing system was developed for the mechanical characterization of SiC coatings at high temperatures. The fracture strength of the SiC coatings was characterized by the developed micro-tensile test in the range of $25^{\circ}C$ to $1000^{\circ}C$. Two types of CVD-SiC films were prepared for the micro-tensile test. SiC-A exhibited a large grain size (0.4 ~ 0.6 m) and the [111] preferred orientation, while SiC-B had a small grain size (0.2 ~ 0.3 mm) and the [220] preferred orientation. Free silicon (Si) was co-deposited onto SiC-B, and stacking faults also existed in the SiC-B structure. The fracture strengths of the CVD-SiC coatings, as measured by the high-temperature micro-tensile test, decreased with the testing temperature. The high-temperature fracture strengths of CVD-SiC coatings were related to the microstructure and defects of the CVD-SiC coatings.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.739-745
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• 2003

In $N_{x}$ films were deposited on soda-lime glass without substrate heating by reactive dc magnetron sputtering using indium (In) metal target. Depositions were carried out under various total gas pressures ( $P_{tot}$) of mixture gases (Ar+$N_2$ or He+$N_2$). He gas was introduced to $N_2$ gas in order to enhance the reactivity of nitrogen on film surface by the "penning ionization". Plasma impedance decreased greatly when 20% or more introduced the $N_2$ gas. This is due to the In $N_{x}$ layers formed on target surface because a secondary electron emission rate of InN is small compared with In metal. XRD patterns of the films revealed that <001> preferred oriented polycrystalline In $N_{x}$ films, where the crystallinity of the films was improved with decrease of $P_{tot}$ and with increase of $N_2$ flow ratio. The improvement of the crystallinity and stoichimetry of the In $N_{x}$ films were considered to be caused by an increase in the activated nitrogen radicals and also by an increase in the kinetic energy of sputtered In atoms arriving at growing film surface, which should enhance the chemical reaction and surface migration on the growing film surface, respectively. Furthermore, the films deposited using mixture gases of He+$N_2$ showed higher crystallinity compared with the film deposited by the mixture gases of Ar+$N_2$.$.EX>.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.171-177
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• 2002

In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.209-215
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• 1997

Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.94-98
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• 2011

A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{\circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{\times}10^{-3}{\Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.

• Journal of the Korean Ceramic Society
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• v.48 no.1
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• pp.69-73
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• 2011

A $ZrO_2$ thin film as a corrosion protective layer was deposited on Zircaloy-4 (Z-4) clad material using $N_2O$ as a reactive gas by RF reactive magnetron sputtering at room temperature. The Z-4 substrate was located in plasma or out of plasma during the $ZrO_2$ deposition process to investigate mechanical and corrosive properties for the plasma immersion. Tetragonal and monoclinic phases were existed in $ZrO_2$ thin film immersed in plasma. We observed that a grain size of the $ZrO_2$ thin film immersed in plasma state is larger than that of the $ZrO_2$ thin film out of plasma state. In addition, the corrosive property of the $ZrO_2$ thin films in the plasma was characterized using the weight gains of Z-4 after the corrosion test. Compared with the $ZrO_2$ thin film immersed out of plasma, the weight gains of $ZrO_2$ thin film immersed in plasma were larger. These results indicate that the $ZrO_2$ film with the tetragonal phase in the $ZrO_2$ can protect the Z-4 from corrosive phenomena.

• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.590-597
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• 2010

HTGR using a TRISO coated particles as nuclear raw fuel material can be used to produce clean hydrogen gas and process heat for a next-generation energy source. For these purposes, a TRISO coated particle was prepared with 3 pyro-carbon (buffer, IPyC, and OPyC) layers and 1 silicone carbide (SiC) layer using a CVD technique on a spherical $UO_2$ kernel surface as a fissile material. In this study, a spherical $UO_2$ particle was prepared using a modified sol-gel method with a vibrating nozzle system, and TRISO coating fabrication was carried out using a fluidized bed reactor with coating gases, such as acetylene, propylene, and methyltrichlorosilane (MTS). As the results of this study, a spherical $UO_2$ kernel with a sphericity of 1+0.06 was obtained, and the main process parameters in the $UO_2$ kernel preparation were the well-formed nature of the spherical ADU liquid droplets and the suitable temperature control in the thermal treatment of intermediate compounds in the ADU, $UO_3$, and $UO_2$ conversions. Also, the important parameters for the TRISO coating procedure were the coating temperature and feed rate of the feeding gas in the PyC layer coating, the coating temperature, and the volume fraction of the reactant and inert gases in the SiC deposition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.543-551
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• 2012

In this study, transparent conducting Al-doped Zinc Oxide (AZO) films with a thickness of 150 nm were prepared on corning glass substrate by the RF magnetron sputtering with using a Al-doped zinc oxide (AZO), ($Al_2O_3$: 2 wt%) target at room temperature. This study investigated the effect of rapid thermal annealing temperature and oxygen ambient on structural, electrical and optical properties of Al-doped zinc oxide (AZO) thin films. The films were annealed at temperatures ranging from 400 to $700^{\circ}C$ by using Rapid thermal equipment in oxygen ambient. The effect of RTA treatment on the structural properties were studied by x-ray diffraction and atomic force microscopy. It is observed that the Al-doped zinc oxide (AZO) thin film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas reveals the strongest XRD emission intensity and narrowest full width at half maximum among the temperature studied. The enhanced UV emission from the film annealed at $500^{\circ}C$ at 5 minute oxygen ambient gas is attributed to the improved crystalline quality of Al-doped zinc oxide (AZO) thin film due to the effective relaxation of residual compressive stress and achieving maximum grain size.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.94-98
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• 2005

$RuO_2$ is widely studied as a lower electrode material for high dielectric capacitors in DRAM (Dynamic Random Access Memories) and FRAM (Ferroelectric Random Access Memories). In this study, the effects of hydrogen, oxygen, and argon Electron Cyclotron Resonance (ECR) plasma pretreatments on deposited by Metal Organic Chemical Vapor Deposition (MOCVD) $RuO_2$ nucleation was investigated using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) analyses. Argon ECR plasma pretreatment was found to offer the highest $RuO_2$ nucleation density among these three pretreatments. The mechanism through which $RuO_2$ nucleation is enhanced by ECR plasma pretreatment may be that the argon or the hydrogen ECR plasma removes nitrogen and oxygen atoms at the TiN film surface so that the underlying TiN film surface is changed to Ti-rich TiN.

• Membrane Journal
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• v.22 no.6
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• pp.424-434
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• 2012

In this study, a ceramic membrane was prepared by CVD. Tube type alpha alumina support was used for substrate and added the Ga salt in intermediate layer. Synthesized method was counter diffusion CVD method at $650^{\circ}C$ with tetramethylorthosilane (TMOS). Gas permeation was measured at $600^{\circ}C$ using single-component $H_2$, $N_2$, $CO_2$ and $CH_4$. During the steam treatment, $H_2/N_2$ permselectivity of non-Ga silica membrane was decreased 926 to 829 at $600^{\circ}C$. On the other hand $H_2/N_2$ permselectivity of added Ga silica membrane was stable 910 to 904 at $600^{\circ}C$. These results show that the metal-doped membranes improved steam stability for gas separation.