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http://dx.doi.org/10.4191/KCERS.2011.48.1.094

Synthesis of TiO2/ITO Nanostructure Photoelectrodes and Their Application for Dye-sensitized Solar Cells  

Kim, Dae-Hyun (Nano-Materials Center, Korea Institute of Science and Technology)
Park, Kyung-Soo (Nano-Materials Center, Korea Institute of Science and Technology)
Choi, Young-Jin (Nano-Materials Center, Korea Institute of Science and Technology)
Choi, Heon-Jin (Department of Materials Science and Engineering, Yonsei University)
Park, Jae-Gwan (Nano-Materials Center, Korea Institute of Science and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.48, no.1, 2011 , pp. 94-98 More about this Journal
Abstract
A Sn-doped $In_2O_3$ (ITO) nanowire photoelectrode was produced using a simple metal evaporation method at low synthesis temperature (< $540^{\circ}C$). The nanowire electrodes have large surface area compared with that of flat ITO thin film, and show low electrical resistivity of $5.6{\times}10^{-3}{\Omega}cm$ at room temperature. In order to apply ITO nanowires to the photoelectrodes of dye-sensitized solar cell (DSSC), those surfaces were modified by $TiO_2$ nanoparticles using a chemical bath deposition (CBD) method. The conversion efficiency of the fabricated $TiO_2$/ITO nanostructure-based DSSC was obtained at 1.4%, which was increased value by a factor of 6 than one without ITO nanowires photoelectrode. This result is attributed to the large surface area and superior electrical property of the ITO nanowires photoelectrode, as well as the structural advantages, including short diffusion length of photo-induced electrons, of the fabricated $TiO_2$/ITO nanostructure-based DSSC.
Keywords
ITO nanowire; $TiO_2$ nanoparticle; Dye-sensitized solar cells; Electrical resistivity; Surface area;
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