• 한국항해항만학회:학술대회논문집
• /
• 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.1
• /
• pp.171-174
• /
• 2006

A large number of service providers in countries all over the world have established GNSS reference station networks in the last years and are using network software today to provide a correction stream to the user as a routine service. In current GNSS network processing, all the geometric related information such as ionospheric free carrier phase ambiguities from all stations and satellites, tropospheric effects, orbit errors, receiver and satellite clock errors are estimated in one centralized Kalman filter. Although this approach provides an optimal solution to the estimation problem, however, the processing time increases cubically with the number of reference stations in the network. Until now one single Personal Computer with Pentium 3.06 GHz CPU can only process data from a network consisting of no more than 50 stations in real time. In order to process data for larger networks in real time and to lower the computational load, a federated filter approach can be considered. The main benefit of this approach is that each local filter runs with reduced number of states and the computation time for the whole system increases only linearly with the number of local sensors, thus significantly reduces the computational load compared to the centralized filter approach. This paper presents the technical aspect and performance analysis of the federated filter approach. Test results show that for a network of 100 reference stations, with the centralized approach, the network processing including ionospheric modeling and network ambiguity fixing needs approximately 60 hours to process 24 hours network data in a 3.06 GHz computer, which means it is impossible to run this network in real time. With the federated filter approach, only less than 1 hour is needed, 66 times faster than the centralized filter approach. The availability and reliability of network processing remain at the same high level.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.167-170
• /
• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.163-166
• /
• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• 한국전기전자재료학회논문지
• /
• 제31권6호
• /
• pp.357-361
• /
• 2018

We demonstrated a crack-free ${\alpha}-Ga_2O_3$ on sapphire substrate by horizontal halide vapor phase epitaxy (HVPE). Oxygen-and gallium chloride-synthesized Ga metal and HCl were used as the precursors, and $N_2$ was used as the carrier gas. The HCl flow and growth temperature were controlled in the ranges of 10~30 sccm and $450{\sim}490^{\circ}C$, respectively. The surface of ${\alpha}-Ga_2O_3$ template grown at $470^{\circ}C$ was flat and the root-mean-square (RMS) roughness was ~2 nm. The full width at half maximum (FWHM) values for the symmetric-plane diffractions, were as small as 50 arcsec and those for the asymmetric-plane diffractions were as high as 1,800 arcsec. The crystal quality of ${\alpha}-Ga_2O_3$ on sapphire can be controlled by varying the HCl flow rate and growth temperature.

• 센서학회지
• /
• 제24권6호
• /
• pp.385-391
• /
• 2015

In this paper, we propose a new method to infiltrate $Fe_3O_4$-nanoparticles into a porous silicon film and a monitoring technique to detect packing density of nanoparticles within the film. Recently, research to use porous silicon as a drug carrier or a new functional sensor material by infiltrating $Fe_3O_4$-nanoparticles has been extensively performed. However, it is still necessary to enhance the packing density and to develop a monitoring technique to detect the packing density in real time. In this light, we forcibly injected a nanoparticle solution into a rugate-structured free-standing porous silicon (FPS) film by applying a pressure difference between the two sides of the film. We found that the packing density by the pressure-infiltration method proposed in this paper is enhanced, relative to that by the previous diffusion method. Moreover, a continuous shift in wavelength of the rugate reflectance peak measured from the film surface was observed while the nanoparticle solution was being injected. By exploiting this phenomenon, we could qualitatively monitor the packing density of $Fe_3O_4$-nanoparticles within the FPS film with the injection volume of the nanoparticle solution.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.297.2-297.2
• /
• 2013

Scavenging electricity from wasteful energy resources is currently an important issue and piezoelectric nanogenerators (NGs) based on zinc oxide (ZnO) are promising energy harvesters that can be adapted to various portable, wearable, self-powered electronic devices. Although ZnO has several advantages for NGs, the piezoelectric semiconductor material ZnO generate an intrinsic piezoelectric potential of a few volts as a result of its mechanical deformation. As grown, ZnO is usually n-type, a property that was historically ascribed to native defects. Oxygen vacancies (Vo) that work as donors exist in ZnO thin film and usually screen some parts of the piezoelectric potential. Consequently, the ZnO NGs' piezoelectric power cannot reach to its theoretical value, and thus decreasing the effect from Vo is essential. In the present study, c-axis oriented insulator-like sputtered ZnO thin films were grown in various temperatures to fabricate an optimized nanogenerator (NGs). The purity and crystalinity of ZnO were investigated with photoluminescence (PL). Moreover, by introducing a p-type polymer usually used in organic solar cell, it was discussed how piezoelectric passivation effect works in ZnO thin films having different types of defects. Prepared ZnO thin films have both Zn vacancies (accepter like) and oxygen vacancies (donor like). It generates output voltage 20 time lager than n-type dominant semiconducting ZnO thin film without p-type polymer conjugating. The enhancement is due to the internal accepter like point defects, zinc vacancies (VZn). When the more VZn concentration increases, the more chances to prevent piezoelectric potential screening effects are occurred, consequently, the output voltage is enhanced. Moreover, by passivating remained effective oxygen vacancies by p-type polymers, we demonstrated further power enhancement.

• Biomolecules & Therapeutics
• /
• 제27권3호
• /
• pp.290-301
• /
• 2019

Paeonol has neuroprotective function, which could be useful for improving central nervous system disorder. The purpose of this study was to characterize the functional mechanism involved in brain transport of paeonol through blood-brain barrier (BBB). Brain transport of paeonol was characterized by internal carotid artery perfusion (ICAP), carotid artery single injection technique (brain uptake index, BUI) and intravenous (IV) injection technique in vivo. The transport mechanism of paeonol was examined using conditionally immortalized rat brain capillary endothelial cell line (TR-BBB) as an in vitro model of BBB. Brain volume of distribution (VD) of [$^3H$]paeonol in rat brain was about 6-fold higher than that of [$^{14}C$]sucrose, the vascular space marker of BBB. The uptake of [$^3H$]paeonol was concentration-dependent. Brain volume of distribution of paeonol and BUI as in vivo and inhibition of analog as in vitro studies presented significant reduction effect in the presence of unlabeled lipophilic compounds such as paeonol, imperatorin, diphenhydramine, pyrilamine, tramadol and ALC during the uptake of [$^3H$]paeonol. In addition, the uptake significantly decreased and increased at the acidic and alkaline pH in both extracellular and intracellular study, respectively. In the presence of metabolic inhibitor, the uptake reduced significantly but not affected by sodium free or membrane potential disruption. Similarly, paeonol uptake was not affected on OCTN2 or rPMAT siRNA transfection BBB cells. Interestingly. Paeonol is actively transported from the blood to brain across the BBB by a carrier mediated transporter system.

• 한국재료학회지
• /
• 제31권6호
• /
• pp.325-330
• /
• 2021

Bi₂MoO₆ (BMO) via the structure-directing role of CO(NH₂)₂ is successfully prepared via a facile solvothermal route. The structure, morphology, and photocatalytic performance of the nanoflake BMO are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), fluorescence spectrum analysis (PL), UV-vis spectroscopy (UV-vis) and electrochemical test. SEM images show that the size of nanoflake BMO is about 50 ~ 200 nm. PL and electrochemical analysis show that the nanoflake BMO has a lower recombination rate of photogenerated carriers than particle BMO. The photocatalytic degradation of tetracycline hydrochloride (TC) by nanoflake BMO under visible light is investigated. The results show that the nanoflake BMO-3 has the highest degradation efficiency under visible light, and the degradation efficiency reached 75 % within 120 min, attributed to the unique hierarchical structure, efficient carrier separation and sufficient free radicals to generate active center synergies. The photocatalytic reaction mechanism of TC degradation on the nanoflake BMO is proposed.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
• /
• pp.83-83
• /
• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• Korean Chemical Engineering Research
• /
• 제61권4호
• /
• pp.487-495
• /
• 2023

암모니아는 인류의 식량문제를 해결할 수 있는 비료 생산의 주요 원료임과 동시에 무탄소 연료이면서 친환경적인 수소 운반자로서 중요한 에너지원으로 알려져 있다. 그래서 지금까지도 암모니아를 합성하거나 분해하는 기술들이 각광을 받고 있다. 암모니아 합성 및 분해 반응을 촉진시키기 위해서는 반드시 촉매 재료가 필요하다. 고성능 및 값싼 암모니아 합성 및 분해용 신촉매를 설계하기 위해서는 무수히 많은 합성 가능한 촉매 후보군들을 다루어야만 하는데 전통적인 접근법만으로 탐색 및 분석을 하기엔 시간적, 경제적인 비용이 많이 들 수밖에 없다. 최근에 4차 산업혁명의 핵심기술에 속하는 머신러닝을 이용하여 이용하여 고성능 촉매를 빠르고 정확하게 찾을 수 있는 탐색 모델이 개발되어 왔다. 본 연구에서는 암모니아 합성 및 분해용 반응 메커니즘에 대해서 알아보고, 고성능 및 경제적인 암모니아 합성 및 분해 촉매를 효율적으로 탐색할 수 있는 머신러닝 기반 방법에 대한 최신 연구 및 전망을 기술하였다.