• Title/Summary/Keyword: Carbon film

검색결과 1,327건 처리시간 0.025초

Electrochemical Lithium Insertion/Extraction for Carbonaceous Thin Film Electrodes in Propylene Carbonate Solution

  • Fukutsuka, Tomokazu;Abe, Takeshi;Inaba, Minoru;Ogumi, Zempachi;Matsuo, Yoshiaki;Sugie, Yosohiro
    • Carbon letters
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    • 제1권3_4호
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    • pp.129-132
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    • 2001
  • Carbonaceous thin films were prepared from acetylene and argon gases by plasma assisted chemical vapor deposition (Plasma CVD) at 873 K. The carbonaceous thin films were characterized by mainly Raman spectroscopy, and their electrochemical properties were studied by cyclic voltammetry and charge-discharge measurements in propylene carbonate (PC) solution. Raman spectra showed that crystallinity of carbonaceous thin films is correlated by the applied RF power. The difference of the applied RF power also affected on the results of cyclic voltammetry and charge-discharge measurements. In PC solution, intercalation and de-intercalation of lithium ion can occur as well as in the mixed solution of EC and DEC.

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카본나노튜브/도전성폴리머(CNT/EAP) 복합재 필름의 제조 및 특성분석 (Fabrication and Straining Model of a CNT/EAP Composite Film)

  • 쟝슈아이;김철
    • 한국복합재료학회:학술대회논문집
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    • 한국복합재료학회 2005년도 추계학술발표대회 논문집
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    • pp.117-120
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    • 2005
  • The relationship between strain and applied potential was derived for composite actuators consisting single-wall carbon nanotubes (SWNTs) and conductive polymers (CPs). During deriving the relationship, an electrochemical ionic approach is utilized to formulate the electromechanical actuation of the composite film actuator. The results show that the well-aligned SWNTs composite actuator can give good actuation responses and high actuating forces available. The actuation is found to be affected by both SWNTs and CPs components and the actuation of SWNTs component has two kinds of influences on that of the CPs component: reinforcement at the positive voltage and abatement at the negative voltage. CNT/EAP was fabricated successfully using the chemical polymerization method.

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하드디스크 DLC 필름의 마찰 마모특성에 대한 온도와 습도의 영향 (Effects of Temperature and Humidity on the Friction and Wear Properties of DLC Film on the Hard Disk)

  • 안준양;김대은
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2001년도 추계학술대회논문집A
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    • pp.876-881
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    • 2001
  • DLC(Diamond-like carbon) films possess high hardness, low friction coefficient, and good wear resistance. Due to these properties, DLC films have been used extensively in magnetic hard disk industry. The objective of the present study was to investigate the influence of environmental condition on the tribological behavior of DLC coated hard disk. It is found that the tribological characteristics of DLC films are strongly affected by relative humidity and temperature. Specifically, the friction coefficient increases with increase in temperature at relative humidity of 50%. However, at 20% and 85% RH the effect of temperature was not significant. Also, the degree of wear could be observed using an AFM.

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자화된 유도 결합형 플라즈마를 이용한 다이아몬드성 탄소박막 증착 (Diamond-Like Carbon Films Prepared by Magnetized Inductively Coupled Plasma)

  • 김중균;이호준;황기웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 추계학술대회 논문집 학회본부
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    • pp.323-325
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    • 1995
  • An Inductively Coupled Plasma(ICP) was employed to prepare the Diamond-Like Carbon film with $CH_4$ gas. We observed the changes of mechanical, optical properties and internal stress of the films according to the variation of discharge power and negative-self bias. When weak magnetic field is applied, the properties of film are observed to change drastically. In magnetized case, the micro-hardness and the internal stress increase up to critical point and droped down in marked contrast to unmagnetized case. It suggests that large amount of ion flux exists due to high dissociation rate of the reactive radicals in plasma with magnetic field as reported elsewhere. As a result of FT-IR absorption measurement it could be confirmed that the $CH_x$ bonding and the micro-hardness and the internal stress decreased with the increase of negative-self bias.

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W-B-C-N 확산방지막에서 질소농도에 따른 Stress 에 대한 연구

  • 소지섭;이창우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.72-73
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    • 2005
  • Stress behavior was studied to investigate the internal behaviors of boron, carbon, and nitrogen in the 1000${\AA}$-thick tungsten boron carbon nitride (W-B-C-N) thin films. The impurities in the W-B-C-N thin films provide stuffing effects that were very effective for preventing the interdiffusion between interconnection metal and silicon substrate during the subsequent high temperature annealing process. The resistivity of W-B-C-N thin film decreases as an annealing temperature increase. The W-B-C-N thin films have compressive stress, and the stress value decreased up to $4.11\times10^{10}dyne/cm^2$ as an $N_2$ flow rate increases up to 3 sccm.

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OPTICAL EMISSION SPECTROSCOPY OF Ch$_4$/Ar/H$_2$ GAS DISCHARGES IN RF PLASMA CVD OF HYDROGENATED AMORPHOUS CARBON FILMS

  • Lee, Sung-Soo;Osamu Takai
    • 한국표면공학회지
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    • 제29권6호
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    • pp.648-653
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    • 1996
  • Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

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탑 게이트 탄소나노튜브 트랜지스터 특성 연구 (Properties of CNT field effect transistors using top gate electrodes)

  • 박용욱;윤석진
    • 센서학회지
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    • 제16권4호
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    • pp.313-318
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    • 2007
  • Single-wall carbon nanotube field-effect transistors (SWCNT FETs) of top gate structure were fabricated in a conventional metal-oxide-semiconductor field effect transistor (MOSFET) with gate electrodes above the conduction channel separated from the channel by a thin $SiO_{2}$ layer. The carbon nanotubes (CNTs) directly grown using thin Fe film as catalyst by thermal chemical vapor deposition (CVD). These top gate devices exhibit good electrical characteristics, including steep subthreshold slope and high conductance at low gate voltages. Our experiments show that CNTFETs may be competitive with Si MOSFET for future nanoelectronic applications.

Water and oxygen permeation through transparent ethylene vinyl alcohol/(graphene oxide) membranes

  • Kim, Hye Min;Lee, Heon Sang
    • Carbon letters
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    • 제15권1호
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    • pp.50-56
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    • 2014
  • We prepared ethylene vinyl alcohol (EVOH)/graphene oxide (GO) membranes by solution casting method. X-ray diffraction analysis showed that GOs were fully exfoliated in the EVOH/GO membrane. The glass transition temperatures of EVOH were increased by adding GOs into EVOH. The melting temperatures of EVOH/GO composites were decreased by adding GOs into EVOH, indicating that GOs may inhibit the crystallization of EVOH during non-isothermal crystallization. However, the equilibrium melting temperatures of EVOH were not changed by adding GOs into EVOH. The oxygen permeability of the EVOH/GO (0.3 wt%) film was reduced to 63% of that of pure EVOH film, with 84% light transmittance at 550 nm. The EVOH/GO membranes exhibited 100 times better (water vapor)/(oxygen) selectivity performance than pure EVOH membrane.

Conductive Characterization of DLC Thin Films Fabricated by Radio-Frequency Magnetron Sputtering

  • ;김태규
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.290-290
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    • 2011
  • In this study Diamond-like carbon (DLC) films were deposited on p-type Si substrates using a Radio-Frequency magnetron Sputtering system. The DLC film was deposited by bombarding graphite target with a N2/Ar plasma mixture with various conditions: substrate, pressure, deposition time, temperature of substrate, power and ratio of gas mixture. The effect on the conduction and hardness of DLC thin films were investigated. The conduction of DLC films were measured by I-V measurement. In addition, Raman analysis was performed to study the chemical bonding structure. The hardness was measured by Nano indentation. Atomic Force Microscopy was used for determined surface morphology of DLC film.

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Highly (111)-oriented SiC Films on Glassy Carbon Prepared by Laser Chemical Vapor Deposition

  • Li, Ying;Katsui, Hirokazu;Goto, Takashi
    • 한국세라믹학회지
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    • 제53권6호
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    • pp.647-651
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    • 2016
  • SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of $10^4Pa$ using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature ($T_{dep}$) range of 1150 - 1422 K. At $T_{dep}=1262K$, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate ($R_{dep}$) was $220{\mu}m\;h^{-1}$ at $T_{dep}=1262K$.