• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.57-60
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• 2003

Electro-Optical (EO) performances for the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new of diamond like carbon (DLC) thin film surface were investigated. Voltage-transmittance (V-T) curve and response time without backflow bounce in the ion beam aligned TN-LCD with ion beam exposure for 0.5 and 1min on the DLC thin film was observed. Also. the fast response time of ion beam aligned TN-LCD with ion beam exposure for 1min on the DLC thin film surface can be achieved. The residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface was almost the same as that of the rubbing aligned TN-LCD on the polyimide(PI) surface.

• Korean Journal of Food Science and Technology
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• v.22 no.2
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• pp.145-149
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• 1990

Extraction and analysis conditions of di-(2-ethylhexyl) adipate (DOA) and its migration contents into foods wrapped with plasticized polyvinyl chloride (PVC) film during storage and cooking with microwave were examined using gas chromatography. Experiments on the extraction solvent and method showed that the method of reflux using carbon tetrachloride for longer than one hour allowed the highest extraction of DOA. Analysis of four PVC wrap films from different factories in domestic market showed the DOA contents of 18.9% for home-use and 24.6% for retail-use on the average. The highest migration during storage was observed in pork belly, which were 21% and 26% after one and three days respectively. During microwave cooking; smaller than 5.5% of DOA were migrated into foods when the film was not contacted with foods, whereas about 49% migration was observed in pork belly contacted with film directly.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.174-174
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.283.2-283.2
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• 2009

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.128-129
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• 1999

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.08a
• /
• pp.209-209
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• 2003

• Bulletin of the Korean Chemical Society
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• v.28 no.9
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• pp.1588-1590
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• 2007

• Proceedings of the Materials Research Society of Korea Conference
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• 1997.05a
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• pp.113-113
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• 1997

• Journal of the Korean Vacuum Society
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• v.20 no.5
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• pp.333-338
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• 2011

In this work, we have fabricated the amorphous carbon (a-C:H) thin film by using unbalanced magnetron sputtering method with the magnetron source of inside/outside electromagnetic coils as the protective coating materials. We have investigated the tribological properties of amorphous carbon films prepared with various electromagnetic coil currents for the change of the plasma density, such as hardness, friction coefficient, adhesion, and surface roughness. Raman and HRTEM were used to study the microstructure of carbon films. In the result, the hardness and adhesion properties of a-C:H films were improved with increasing electromagnetic coil current due to the increase of the plasma density to the substrate. Thus, these results can be explained by the increase of $sp^2$ bonding and cluster number in the amorphous carbon film, related to the improved bombardment around substrate and the increased substrate temperature.

• Journal of the Korean Vacuum Society
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• v.22 no.1
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• pp.31-36
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• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.