• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.134-134
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• 2011

High-k dielectric materials such as $HfO_2$, $ZrO_2$ and $Al_2O_3$ increase gate capacitance and reduce gate leakage current in MOSFET structures. This behavior suggests that high-k materials will be promise candidates to substitute as a tunnel barrier. Furthermore, stack structure of low-k and high-k tunnel barrier named variable oxide thickness (VARIOT) is more efficient.[1] In this study, we fabricated the $WSi_2$ nanocrystals nonvolatile memory device with $SiO_2/HfO_2/Al_2O_3$ tunnel layer. The $WSi_2$ nano-floating gate capacitors were fabricated on p-type Si (100) wafers. After wafer cleaning, the phosphorus in-situ doped poly-Si layer with a thickness of 100 nm was deposited on isolated active region to confine source and drain. Then, on the gate region defined by using reactive ion etching, the barrier engineered multi-stack tunnel layers of $SiO_2/HfO_2/Al_2O_3$ (2 nm/1 nm/3 nm) were deposited the gate region on Si substrate by using atomic layer deposition. To fabricate $WSi_2$ nanocrystals, the ultrathin $WSi_2$ film with a thickness of 3-4 nm was deposited on the multi-stack tunnel layer by using direct current magnetron sputtering system [2]. Subsequently, the first post annealing process was carried out at $900^{\circ}C$ for 1 min by using rapid thermal annealing system in nitrogen gas ambient. The 15-nm-thick $SiO_2$ control layer was deposited by using ultra-high vacuum magnetron sputtering. For $SiO_2$ layer density, the second post annealing process was carried out at $900^{\circ}C$ for 30 seconds by using rapid thermal annealing system in nitrogen gas ambient. The aluminum gate electrodes of 200-nm thickness were formed by thermal evaporation. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer with HP 41501A pulse generator, an Agillent 81104A 80MHz pulse/pattern generator and an Agillent E5250A low leakage switch mainframe. We will discuss the electrical properties for application next generation non-volatile memory device.

• Journal of Sensor Science and Technology
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• v.10 no.5
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• pp.304-313
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• 2001

In this research, we investigate wet-etching properties of GaAs in $NH_4OH-H_2O_2-H_2O$, and develop the fabrication method of GaAs microstructures with rectangular cross section using (001) GaAs substrate. For obtaining wet-etching properties with respect to crystallographic orientation, the etch rates and cross-section etch profiles of (001) GaAs with 16 different compositions and the undercut rates with 5 different compositions are measured using $NH_4OH-H_2O_2-H_2O$ mixed solutions. From these experimental data, a new GaAs micromachining method in bulk (001) GaAs is proposed, and used to fabricate a released microbridges with a rectangular cross section. The developed GaAs micromachining method can be very useful for low-loss, highly-tunable capacitors for RF components and for integration with GaAs optical components.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.961-966
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• 2003

A Multi-Layer Ceramic (MLC) chip type Band-Pass Filter (BPF) using BiNb$\_$0.975/Sb$\_$0.025/ $O_4$ LTCC (Low Temperature Co-fired Ceramics) and MLC processing is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coupled stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The attenuation pole depends on the coupling between resonators and the coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the manufactured BPF is well acceptable for IMT-2000 application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.2 s.117
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• pp.126-135
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• 2007

This paper proposes a new miniaturization method for a parallel coupled line filter with enhanced bandwidth characteristics. A previous method incorporated several advantages, such as size reduction through the use of only a small number of capacitors, in addition to grounding, suppression of harmonic characteristics, and improved skirt characteristics for the parallel coupled line filter, which is conventional in the field of RE filters due to its design and fabrication simplicity. However, the previous method also has disadvantages related to the bandwidth shrinkage of the miniaturized filters. In this paper, the amount of bandwidth shrinkage is analyzed in terms of the relationship between the loaded Q(quality factor) and the group delay of a resonator. Moreover, the reduction in the bandwidth is solved by a design with new design equations. To show the validity of the proposed method, a hairpin filter with a center frequency of 5.2 GHz and an fractional bandwidth(FBW) of 10% was scaled down to half its original dimension by the proposed method with the enhanced bandwidth characteristics. The measured result shows a high level of agreement with theoretical results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.25-29
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• 2010

Thulium oxide-doped barium titanate ceramics for MLCCs with perovskite structure were prepared by a sintering process at $1320^{\circ}C$ for 2 h in a reduced atmosphere. The effect of $Tm_2O_3$ addition on dielectric property of barium titanate ceramics has been studied in terms of their microstructures. Moreover, the phase identification of the dielectric specimens was conducted to define the secondary phase (pyrochlore). The specimen doped with 1 mol% $Tm_2O_3$ exhibited the highest dielectric constant. However, the dielectric constants of specimens with more than 2 mol% $Tm_2O_3$ to $BaTiO_3$ were the lower values than that of 1 mol% doped one. The grain size and the formation of pyrochlore phase associated with the dielectric properties were examined through morphology development and the structural analysis. Furthermore, these data were compared with the property of the dielectric material doped with $Er_2O_3$. It could be concluded that the dielectric property of ceramic capacitors were attributed to the change of pyrochlore phase and the tetragonality of $BaTiO_3$ with doping.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.10
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• pp.80-85
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• 2010

In this paper, a MIMO antenna is proposed for LTE/DCSl800/USPCSl900 handset applications. The proposed antenna is based on the IFA and its wide bandwidth is obtained by using a stagger tuning technique. To improve the isolation, a suspended line is connected to the shorting points in two antennas, and capacitors and inductors are added to the connected suspended line. Two identical antennas of which dimension is 2.8cc($40{\times}10{\times}7mm$) are mounted on the two end lines of the system ground plane($40{\times}60mm$). Analysis of the antenna performance and optimization is performed using CST Microwave Studio. The bandwidths are satisfied for LTE band class 13(746-787MHz), class 14(758-798MHz) and DCSl800/USPCSl900 band (1710-1990MHz). The isolations between two antennas are about -12dB for LTE band and -10dB for DCSl800/USPCSl900 band. And the radiation efficiency of each antenna is about for LTE band 33% and 45% for DCSl800/USPCSl900 band respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.1
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• pp.79-84
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• 2007

In this paper, a fully-integrated low phase noise multi-band CMOS VCO using automatic level controller (ALC) and switched LC tank has been presented. The proposed VCO has been fabricated in a 0.13-um CMOS process. The switched LC tank has been designed with a pair of capacitors and two pairs of inductors switched using MOS switch. By using this structure, four band (2.986 ${\sim}$ 3.161, 3.488 ${\sim}$ 3.763, 4.736 ${\sim}$ 5.093, and 5.35 ${\sim}$ 5.887 GHz) operation is achieved in a single VCO. The VCO with 1.2 V power supply has phase noise of -118.105 dBc/Hz @ 1 MHz at 2.986 GHz and -113.777 dBc/Hz @ 1 MHz at 5.887 GHz, respectively. The reduced phase noise has been approximately -1 ${\sim}$ -3 dBc/Hz @ 1 MHz in the broadest tuning range, 2.986 ${\sim}$ 5.887 GHz. The VCO has consumed 4.2 ${\sim}$ 5.4 mW in the entire frequency band.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.11
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• pp.70-77
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• 2013

We suggest a low area and high efficiency switched-mode power supply (SMPS) with a pulse width modulation (PWM) generator based on a pseudo relaxation-oscillating technique. In the proposed circuit, the PWM duty ratio is determined by the voltage slope control of an internal capacitor according to amount of charging current in a PWM generator. Compared to conventional SMPSs, the proposed control method consists of a simple structure without the filter circuits needed for an analog-controlled SMPS or the digital compensator used by a digitally-controlled SMPS. The proposed circuit is able to operate at switching frequency of 1MHz~10MHz, as this frequency can be controlled from the selection of one of the internal capacitors in a PWM generator. The maximum current of the core circuit is 2.7 mA, and the total current of the entire circuit including output buffer driver is 15 mA at 10 MHz switching frequency. The proposed SMPS has a simulated maximum ripple voltage of 7mV. In this paper, to verify the operation of the proposed circuit, we performed simulation using Dongbu Hitek BCD $0.35{\mu}m$ technology and measured the proposed circuit.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.5
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• pp.61-66
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• 2013

In this paper, temperature dependence of matching characteristics of $Si_3N_4$ MIM capacitor was analyzed in depth. The matching characteristics becomes worse as the temperature increases. That is, the matching coefficient of $Si_3N_4$ MIM capacitor at $25^{\circ}C$, $75^{\circ}C$, and $125^{\circ}C$ was 0.5870, 0.6151, and $0.7861%{\mu}m$, respectively. This phenomena is believed to be due to the reduction of the carrier mobility and the increase of the charge concentration of the inner capacitor at greater temperature. Therefore, the analysis of the matching characteristics of $Si_3N_4$ MIM capacitors at high temperatures is essential for application to analog and SoC (System on Chip) circuit.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.154-161
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• 2011

This paper presents a compact integrated transceiver module for 2.4 GHz band applications using Low Temperature Co-fired Ceramic(LTCC) technology. The implemented transceiver module is divided into an RF Front-End Module (FEM) part and a transceiver IC chip part. The RF FEM part except an SPDT switch and DC block capacitors is fully embedded in the LTCC substrate. The fabricated RF FEM has 8 pattern layers and it occupies less than $3.3\;mm{\times}5.2\;mm{\times}0.4\;mm$. The measured results of the implemented RF FEM are in good agreement with the simulated results. The transceiver IC chip part consists of signal line, power line and transceiver IC for 2.4 GHz band communication system. The fabricated transceiver module has 9 layers including three inner grounds and it occupies less than $12\;mm{\times}8.0\;mm{\times}1.1\;mm$. The implemented transceiver module provides an output power of 18.1 dBm and a sensitivity of -85 dBm.