• 한국전기전자재료학회논문지
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• 제18권7호
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• pp.594-599
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• 2005

In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

• 한국정밀공학회지
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• 제19권3호
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• pp.33-38
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• 2002

To establish the national standard of capacitance, four main electrodes of the cross capacitor which were evaluated to linearity and roundness less the $\pm 1 \mu m$ respectively have to be adjusted symmetrically in an inner cylinder. Four LM shafts with diameter of 5 mm were installed between main electrodes of the cross capacitor, and the electrodes were adjusted, as the first step, by means of the measured capacitance. In the second step, the symmetrical adjustment up to $\pm 1.2\mu m$ was performed by using a ball sensor, ball-type movable sensor, non-contacting capacitive sensor and upper guard sensor which were developed in this project.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권1호
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• pp.70-82
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• 2014

A nano-power CMOS voltage reference is proposed in this paper. Through a combination of switched-capacitor technology with the body effect in MOSFETs, the output voltage is defined as the difference between two gate-source voltages using only a single PMOS transistor operated in the subthreshold region, which has low sensitivity to the temperature and supply voltage. A low output, which breaks the threshold restriction, is produced without any subdivision of the components, and flexible trimming capability can be achieved with a composite transistor, such that the chip area is saved. The chip is implemented in $0.18{\mu}m$ standard CMOS technology. Measurements show that the output voltage is approximately 123.3 mV, the temperature coefficient is $17.6ppm/^{\circ}C$, and the line sensitivity is 0.15 %/V. When the supply voltage is 1 V, the supply current is less than 90 nA at room temperature. The area occupation is approximately $0.03mm^2$.

• 한국정보통신학회논문지
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• 제16권5호
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• pp.989-998
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• 2012

본 논문에서는 매우 작은 절대 값을 갖는 펨토 패럿 단위의 커패시턴스를 측정 할 수 있는 비율형 커패시턴스 측정 회로를 제안하였다. 제안한 측정 회로는 스위치 커패시터 적분기와 비교기 그리고 스위치를 제어하는 논리 회로와 카운터로 구성되어 있으며, 측정하고자 하는 커패시턴스와 이미 값이 알려진 온-칩 커패시터간의 비율을 측정하고 그 값을 디지털 신호로 출력한다. 그리고 이 비율 값을 통해 오차가 상당부분 제거된 펨토 패럿 단위의 커패시턴스를 구해낼 수 있다. 제안한 커패시턴스 측정 회로는 표준 CMOS $0.18{\mu}m$ 공정을 사용하여 설계되었으며, HSpice 시뮬레이션에서 5fF 이하의 아주 작은 커패시턴스를 오차율 ${\pm}0.3%$ 이내에서 측정이 가능함을 보였다.

• 전력전자학회논문지
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• 제17권6호
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• pp.539-545
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• 2012

Due to merits cost and efficiency, the transformer-less type photovoltaic (PV) inverters have been popularized in the solar market. However, the leakage current flowing through a parasitic capacitor between PV array and ground can cause adverse effect in the transformer-less PV system. In this paper, a bi-directional PV inverter with high efficiency and low noise is proposed for the PV system with an energy storage device. The proposed inverter is a transformer-less type and performs the bi-directional power control between dc sources and grid with high efficiency. In addition, the proposed inverter can suppress the leakage current and obtain low noise characteristic. Finally, 3-kW prototype was implemented to confirm validity of the proposed inverter.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2005년도 ISMP
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• 센서학회지
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• 제23권6호
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• pp.402-408
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• 2014

Heart rate is one of the most important signal to monitor the health condition of the patient or exerciser. Various wearable devices have been developed for the continuous monitoring of ECG signal from human body during exercise. Among these, ECG chest belt has been widely used. However wearing chest belt with ECG sensor is uncomfortable in normal life due to the electrode contact between metal electrodes of ECG sensor and skin of the human body. So we develop the royal healthcare backpack that can measure ECG signal without skin contact by using capacitor-type ECG sensor. The position of the measurement point is critical to collect a clear ECG signal in the capacitive ECG measurement from backpack. Various tests were conducted to find the optimal ECG measurement position which has less noise and could get strong and clear ECG signal during exercise, walking, hiking, mountain climbing and cycling.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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• pp.181-183
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• 2004

Conventional VVVF control voltage-fed inverter of blower induction motor has advantage that very speedy response characteristics for air-harmonic. But there have bad power factor on input orient have its large volume and high error ratio over 80%. And there are very expensive by reason of using the capacitor input rectifier. In this paper, It could make the smoothing capacitor-less inverter for air-blower motor by using the instantaneous compensation PWM controller. This inverter system has small volume and value compare with the conventional VVVF control inverter for blower induction motor for air-harmonic equipment.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.417-422
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• 2001

The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제49권4호
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• pp.246-255
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• 2000

This paper deals with a novel full digital control method of the three-phase PWM inverter for UPS. The voltage and current of output filter capacitor as state variables are the feedback control input. In addition, a double deadbeat control consisting of a d-q current minor loop and a d-q voltage major loop, both with precise decoupling, have been developed. The switching pulse width modulation based on SVM is adopted so that the capacitor current should be exactly equal to its reference current. In order to compensate the calculation time delay, the predictive control is achieved by the current·voltage observer. The load prediction is used to compensate the load disturbance by disturbance observer with deadbeat response. The experimental results show that the proposed system offers an output voltage with THD less than 2% at a full nonlinear load.