• Journal of Sensor Science and Technology
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• v.26 no.2
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• pp.85-90
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• 2017

A wide dynamic range (WDR) CMOS image sensor (CIS) was developed with a specialized readout architecture for realizing high-sensitivity (HS) and low-sensitivity (LS) reading modes. The proposed pixel is basically a three-transistor (3T) active pixel sensor (APS) structure with an additional transistor. In the developed WDR CIS, only one mode between the HS mode for relatively weak light intensity and the LS mode for the strong light intensity is activated by an external controlling signal, and then the selected signal is read through each column-parallel readout circuit. The LS mode is implemented with the column capacitors and a feedback structure for adjusting column capacitor size. In particular, the feedback circuit makes it possible to change the column node capacitance automatically by using the incident light intensity. As a result, the proposed CIS achieved a wide dynamic range of 94 dB by synthesizing output signals from both modes. The prototype CIS is implemented with $0.18-{\mu}m$ 1-poly 6-metal (1P6M) standard CMOS technology, and the number of effective pixels is 176 (H) ${\times}$ 144 (V).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Journal of Power Electronics
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• v.5 no.4
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• pp.289-304
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• 2005

This paper describes a simple control structure and power conditioning system for an indirect vector controlled stand-alone induction generator (IG) used to operate under variable speed. The required reactive power for the IG system is supplied by means of a capacitor bank and a voltage-source PWM converter. Using a capacitor bank to transfer the reactive power to the IG under the rated speed and no-load conditions starts the IG operation and reduces the PWM converter size. The vector control structure for the variable speed IG power conditioning system compensates for changes in the electrical three-phase and DC loads while considering the magnetizing curve of the IG. The vector control structure is developed to regulate the DC link voltage of the PWM converter and the IG output voltage. The experimental and simulated performance results of the IG power conditioning system at various speeds and loads are given and show that this proposed scheme can be used efficiently for a variable speed, wind energy conversion system.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.2 s.31
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• pp.29-35
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• 2004

Hafnium-oxide gate dielectric films deposited by a metal organic chemical vapor deposition technique on a $N_2-plasma$ treated SiNx and a hydrogen-terminated Si substrate have been investigated. In the case of $HfO_2$ film deposited on a hydrogen-terminated Si substrate, suppressed crystallization with effective carbon impurity reduction was obtained at $450^{\circ}C$. X-ray photoelectron spectroscopy indicated that the interface layer was Hf-silicate rather than phase separated Hf-silicide and silicon oxide structure. Capacitance-voltage measurements show equivalent oxide thickness of about 2.6nm for a 5.0 nm $HfO_2/Si$ single layer capacitor and of about 2.7 nm for a 5.7 nm $HfO_2/SiNx/Si$ stack capacitor. TEM shows that the interface of the stack capacitor is stable up to $900^{\circ}C$ for 30 sec.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.4
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• pp.59-65
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• 2001

Epoxy/$BaTiO_3$composite capacitor films with excellent stability at room temperature, uniform thickness, and electrical properties over a large area ware successfully fabricated. The composite capacitor films with good film formation capability and easy process ability were made from epoxy resin developed for ACF as a matrix and two kinds of $BaTiO_3$powders as fillers to increase the dielectric constant of the composite film. The crystal structure of the powders and its effects on dielectric constant of the films were investigated by X-ray diffraction (XRD). And the optimum amount of dispersant, phosphate ester, was determined by viscosity measurement of suspension. DSC and dielectric property tests were conducted to decide the right curing temperature and the optimum amount of the curing agent. As a result, the capacitors of 7 $\mu \textrm{m}$ thick film with 10 nF/$\textrm{cm}^2$ and low leakage current were successfully demonstrated.

• Journal of IKEEE
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• v.22 no.3
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• pp.630-637
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• 2018

To supply a high voltage to an inverter, a motor control unit (MCU) generally employs a front-end boost converter. Because it generates a high output voltage, the converter needs an output capacitor, which has a high working voltage resulted in cost increasing. To solve this problem, we present a bidirectional dc-to-dc converter, which can decrease a working voltage of the output capacitor. Basic characteristic of the proposed converter is similar to a conventional boost converter. A difference comes from the structure of the output terminal connecting an output capacitor and an input battery in series. Owing to this circuit configuration, the working voltage of the output capacitor becomes lower than that of a conventional boost converter. After theoretical analysis, we carry out simulations and experiments to verify the validity and performance comparing with a conventional boost converter.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.1
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• pp.23-29
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• 2001

The effects of Ti-silicide process on the electrical properties of an analog polysilicon capacitor were investigated. To improve the linearity with the applied voltage both electrodes, which are polysilicon in our device, should have almost same material properties. The doping concentrations of both electrodes need to be high and to have the similar levels. Voltage Coefficient of Capacitance (VCC) is one of the properties to represent the linearity of analog capacitor, and it is related with the material and the structure of capacitor. In this study, it was possible to obtain the lower VCC by siliciding the polysilicon areas of capacitor. This is due to the parasitic capacitance at the interfaces between silicide and polysilicons, resulting the decrease of unit capacitance. However, we assumed the creation of positive oxide charge near the lower polysilicon electrode during the silicide process.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.2
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• pp.339-344
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• 2017

A novel structure of phase locked loop (PLL) which has small size and fast locking time with Early-late detector, Duty-rate modulator, and Lock status indicator (LSI) is proposed in this paper. The area of loop filter usually occupying the larger portion of the chip is minimized using a single small capacitor. While the conventional PLL with a single capacitor loop filter cannot work stably, the proposed PLL with two charge pumps works stably because the output voltage waveform of the proposed a single capacitor loop filter is the same as the output voltage waveform of the conventional 2nd-order loop filter. The two charge pumps are controlled by the Early-late detector which detects early-late status of UP and DN signals, and Duty-rate modulator which generates a steady duty-rate signal. Fast locking time is achieved using LSI. It has been simulated and proved by HSPICE in a CMOS $0.18{\mu}m$ 1.8V process.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.227-230
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• 2001

This paper divides the factors of an accident into two parts, that are electrical deterioration and thermal deterioration, to analyze a characteristic of the factor of an accident which can break out in the capacitor of metal vaporized polypropylene film. For the purpose of creating capacitor which is caused by electric deterioration, we applied DC overvoltage, induced self-healing and breakdown from element. We applied gradual heat to get an element which is cause by thermal deterioration. The chemical structure of the shape and surface is analyzed by thermogravimetric analyzer (TGA), Scanning Electron Microscope (SEM) and Fourier Transform Infrared Spectrometer(FT-IR). As a result, the peak of methylene group came out, in case of electrical deterioration, as observing the self-healing point. However, the peak is disappeared in the heat treated element by 500[$^{\circ}C$], and the peak of carbonyl group which has C=O came out in case of thermal deterioration.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.4
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• pp.918-923
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• 2008

We proposed an embedded capacitor with the unique electrode structure, which electrodes are located on the same plane and dielectric gap was formed by electrodes. We named it 'Gap type EC', and it was analyzed by the FEM(Finite element Method) program tool. The resonant frequency of Cap type EC was obtained at more higher frequency region. Also, resonant frequency was changed with the magnitude and thickness of electrodes. The Gap type EC with the dielectric gap of $50{\mu}m$ showed capacitance density of $55pF/cm^2$. This value is the higher than that of conventional EC. So, we concluded that the Gap type EC can be a good candidate for high frequency decoupling.