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http://dx.doi.org/10.4313/JKEM.2004.17.12.1283

Electric Properties of MFIS Capacitors using Pt/LiNbO3/AlN/Si(100) Structure  

Jung, Soon-Won (청주대학교 일반대학원 전자공학과)
Kim, Kwang-Ho (청주대학교 정보통신공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.12, 2004 , pp. 1283-1288 More about this Journal
Abstract
Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.
Keywords
MFIS capacitor; Rapid thermal anneal; Non-volatile memory; Hysteresis; LiNbO$_3$/AlN/Si(100) structure;
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