• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.7
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• pp.753-759
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• 2014

This paper introduces the reduction design technique of the resonance phenomenon of the inner PCB based on power integrity from the analysis about the inner power supply line generating RLC resonance. With the technique, the resonant frequency resulted from the structural characteristics of the PCB can be analyzed and allows to predict and the capacitor for resonance phenomenon reduction can be decided as a decoupling capacitor. From the simulation result, it was confirmed that the PCB's resonance phenomenon reduction design technique should have the reduction effect in the inner motherboard of the industrial controller. This research will be contributed to the improvement of the safety of a PDN (Power Delivery Network) structure in the layout design technique of the PCB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.1-5
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• 2012

In this paper, matching characteristic of MIM (metal-insulator-metal) capacitor with $Al_2O_3/HfO_2/Al_2O_3$ (AHA) structure is analyzed. The floating gate capacitance measurement technique (FGMT) was used for analysis of matching characteristic of the MIM capacitors in depth. It was shown that matching coefficient of AHA MIM capacitor is 0.331%${\mu}m$ which is appropriate for application to analog/RF integrated circuits. It was also shown that the matching coefficient has a more strong dependence on the width than length of MIM capacitor.

• Journal of IKEEE
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• v.21 no.3
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• pp.219-226
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• 2017

This paper was studied the double-band monopole antenna design with Mu-negative metamaterial unit cell, which operates at 700MHz and 2.45GHz band. Mu-negative unit cell made of the interdigital capacitor structure to operate a double-band antenna by inserting it into an antenna radiator unit. In addition, the parasitic conductor is implemented on the back side of the antenna radiation part, so that the resonance point of the antenna can be controlled and the bandwidth is improved. Finally, we implemented an antenna operating in the 750MHz UHD band and the 2.45GHz WiFi band. The designed antenna has a size of $200{\times}100mm^2$. Experimental results show that the 8dB bandwidth and gain characteristics at 750MHz band are 320MHz(42.7%), 5.28dB, 6dB bandwidth and gain at 2.45GH are 540MHz (21.6%), -0.46dB. From the experimental results, we confirmed that the resonance point with theoretical value is in agreement with experimental value, and the radiation patterns are have the omnidirectional characteristic in both bands.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.2
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• pp.1051-1058
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• 2014

This paper presents a Electrical characteristics of the Memristor device using the PSPICE for circuit analysis. After making macro model of the Memristor device for circuit analysis, electric characteristics of the model such as time analysis, frequency and DC analysis according to the input voltage were performed by PSPICE simulation. Also, we made simple circuits of memristor series and parallel structure and analyzed the simulated SPICE results. Finally, we made a memristor-capacitor (M-C) circuit. charge and discharge characteristics were analyzed. In case of input pulse signal of 250 Hz, the Memristor-capacitor circuit showed delay time of 0.6ms, rising time of 0.58 ms and falling time of 1.6 ms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Korean Journal of Materials Research
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• v.24 no.5
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• pp.259-265
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• 2014

$ZrO_2$ films were coated on aluminum etching foil by the sol-gel method to apply $ZrO_2$ as a dielectric material in an aluminum(Al) electrolytic capacitor. $ZrO_2$ films annealed above $450^{\circ}C$ appeared to have a tetragonal structure. The withdrawal speed during dip-coating, and the annealing temperature, influenced crack-growth in the films. The $ZrO_2$ films annealed at $500^{\circ}C$ exhibited a dielectric constant of 33 at 1 kHz. Also, uniform $ZrO_2$ tunnels formed in Al etch-pits $1{\mu}m$ in diameter. However, $ZrO_2$ film of 100-200 nm thickness showed the withstanding voltage of 15 V, which was unsuitable for a high-voltage capacitor. In order to improve the withstanding voltage, $ZrO_2$-coated Al etching foils were anodized at 300 V. After being anodized, the $Al_2O_3$ film grew in the directions of both the Al-metal matrix and the $ZrO_2$ film, and the $ZrO_2$-coated Al foil showed a withstanding voltage of 300 V. However, the capacitance of the $ZrO_2$-coated Al foil exhibited only a small increase because the thickness of the $Al_2O_3$ film was 4-5 times thicker than that of $ZrO_2$ film.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1366-1379
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• 2019

High-gain DC/DC converters have become one of the key technologies for the grid-connected operation of new energy power generation, and its research provides a significant impetus for the rapid development of new energy power generation. Inspired by the transformer effect and the ripple-suppressed ability of a coupled inductor, a double-coupled inductor high gain DC/DC converter with a ripple absorption circuit is proposed in this paper. By integrating the diode-capacitor voltage multiplying unit into the quadratic Boost converter and assembling the independent inductor into the magnetic core of structure coupled inductors, the adjustable range of the voltage gain can be effectively extended and the limit on duty ratio can be avoided. In addition, the volume of the magnetic element can be reduced. Very small ripples of input current can be obtained by the ripple absorption circuit, which is composed of an auxiliary inductor and a capacitor. The leakage inductance loss can be recovered to the load in a switching period, and the switching-off voltage spikes caused by leakage inductance can be suppressed by absorption in the diode-capacitor voltage multiplying unit. On the basis of the theoretical analysis, the feasibility of the proposed converter is verified by test results obtained by simulations and an experimental prototype.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.446-450
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• 2011

Tunable SC(Switched Capacitor) bandpass ${\Sigma}-{\Delta}$(Sigma-Delta) modulator used in wireless system receiver occurs a signal attenuation according to tuning of center frequency in signal bandwidth. In this paper, tunable bandpass 4th order SC bandpass ${\Sigma}-{\Delta}$ modulator with novel structure is proposed for rejection of signal attenuation in signal bandwidth. The existing structure uses a ten variable coefficient values for rejection of signal reduction in the modulator. But the proposed structure only use a two variable coefficient values for rejection of signal attenuation in the modulator. Also, an adder and comparator is replaced with a comparator having 4 inputs in the modulator. Therefore, the existing structure has one more OP-AMP. The purposed modulator was designed in $0.18\;{\mu}m$ CMOS technology. The resolution of the modulator within 310 kHz bandwidth and 40 MHz sampling frequency under 6.67 MHz, 10 MHz and 13.33 MHz intermediate frequency are over 10 bit.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1919-1921
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• 1999

AlN thin films were fabricated by sputter for the application of MIS device with Al/AlN/Si structure. We controled that sub-temperature room-temperature. Sputtering pressure 5 mTorr, flow ratio Ar:$N_2$=1:1(4sccm:4sccm), and appended hydrogen gas $0{\sim}5%$. AlN thin films thickness fabricated to maintain $2700{\AA}$ time control. Before the experiment remove to the contaminated material use the Ultrasonic every 10 minute use the acetone and ethanol, then use the HF remove oxide-substance at 10 second. To analyze characteristic of the $H_2$ gas addition period, C-V and I-V characteristic make and experiment $H_2$ gas at addition period progressive capability of I-V and C-V characteristic.