• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.7-14
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• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.

• 한국재료학회지
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• 제26권10호
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• pp.556-560
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• 2016

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.88-88
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• 2010

High Voltage cross-linked polyethylene (XLPE) cables are widely used in a thermal power plant. These cables had been in service for 26 years. The insulation condition of six 6 kV XLPE cables was estimated by insulation diagnostic analyzer (IDA) with voltage amplifier. IDA was measured dissipation factor and capacitance of the whole cable as a function of frequency and voltage. This system measures in the frequency range from 0.1 to 10 Hz at each voltage level. Six XLPE cables are judged good condition, but three cables are analyzed at an aged condition.

• Journal of Power Electronics
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• 제10권2호
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• pp.107-114
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• 2010

This paper presents the operational characteristics of a high voltage flyback converter with resonant elements. In high voltage low power applications, the effect of a transformer’s stray capacitance might be the most important factor that influences the overall performance of the circuit. A detailed mode analysis and the design procedure are presented in designing the high voltage flyback converter. To verify and confirm the validities of the presented analysis and design procedure, a computer simulation and experiments have been performed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.63-66
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• 2003

In this paper, the electrical characteristics of single oxide layer due to high temperature diffusion process, wafer resistivity and thickness of poly backseat was researched. The oxide quality was examined through capacitance-voltage characteristics, and besides, it will be describe the capacitance-voltage characteristics of the single oxide layer by semiconductor device simulation.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 추계종합학술대회
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• pp.777-779
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• 2003

본 논문에서는 main gate와 side gate를 갖는 double gate MOSFET의 C-V 특성을 조사하였다. Main gate 전압을 -5V에서 ＋5V까지 변화시킴으로써 main gate 길이가 50nm이고, side gate 길이가 70nm인 MOSFET의 C-V 특성을 조사하였다. 또한, Main gate 길이가 50nm인 double gate MOSFET의 side gate의 길이를 40nm에서 90nm로 변화시키면서 C-V 곡선을 비교ㆍ분석하였다. Side gate 길이가 줄어들수록 전달컨덕턴스는 증가하고, 커패시턴스는 감소하는 경향을 나타내었다. 게이트 전압이 1.8V일 때, side gate의 영향으로 C-V곡선에 굴곡이 나타났으며, 소자의 특성 분석을 위해 ISE-TCAD를 사용하여 시뮬레이션 하였다.

• 한국전기전자재료학회논문지
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• 제20권1호
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• pp.47-52
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• 2007

Organic field-effect transistors (OFETS) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with varying channel length. The CuPc FET device was made a top-contact type and the channel length was a $100\;{\mu}m,\;50\;{\mu}m,\;40\;{\mu}m,\;and\;30\;{\mu}m$ and the channel width was a fixed at 3 mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET with varying channel length (L) and we calculated the effective mobility. Also, we measured a capacitance-voltage (C-V) by applied bias voltage with varying frequency at 43, 100, 1000 Hz.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1999년도 춘계종합학술대회
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• pp.330-334
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• 1999

This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1351-1352
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• 2006

In this paper, the impedance properties of degraded thyristor with heat and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100-10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.