Design and Fabrication of Wide-band Transient Voltage Blocking Device

광대역 과도전압 차단장치의 설계 및 제작

  • 송재용 (한국해양대학교 전기공학과) ;
  • 이종혁 (한국해양대학교 전기공학과) ;
  • 길경석 (한국해양대학교 전기공학과)
  • Published : 1999.05.01

Abstract

This paper presents a new transient voltage blocking device (TBD) for commucation facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, the new TBD, which consists of a gas tube, avalanche diodes and junction type field effect transistors (JFETs), was designed and fabricated JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche diodes with low energy capacity are protected from the high current, and the TBD has a very small input capacitance. From the performance test using surge generator, which can produce 1.2/50${\mu}\textrm{s}$ 4.2 k$V_{max}$, 8/20${\mu}\textrm{s}$ 2.1 kA$\sub$max/, it is confirmed that the proposed TBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

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