• Journal of electromagnetic engineering and science
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• v.14 no.4
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• pp.411-414
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• 2014

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the $0.18-{\mu}m$ SiGe HBT process, taking up an area of $0.3mm^2$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.200-201
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• 2017

This paper introduces the SPICE simulation results of 3D sequential inverter considering electrical coupling. TCAD data and the SPICE data are compared to verify that the electrical coupling is well considered by using BSIM-IMG for the upper NMOS and LETI-UTSOI model for the lower PMOS. When inter layer dielectric is small, it is confirmed that electrical coupling is well reflected in the top transistor $I_{ds}-V_{gs}$ characteristics according to the change of the bottom transistor gate voltage.

• ETRI Journal
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• v.35 no.4
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• pp.610-616
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• 2013

This paper proposes a transparent logic circuit for radio frequency identification (RFID) tags in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technology. The RFID logic circuit generates 16-bit code programmed in read-only memory. All circuits are implemented in a pseudo-CMOS logic style using transparent a-IGZO TFTs. The transmittance degradation due to the transparent RFID logic chip is 2.5% to 8% in a 300-nm to 800-nm wavelength. The RFID logic chip generates Manchester-encoded 16-bit data with a 3.2-kHz clock frequency and consumes 170 ${\mu}W$ at $V_{DD}=6$ V. It employs 222 transistors and occupies a chip area of 5.85 $mm^2$.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.3
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• pp.7-17
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• 2010

In this paper, an innovative low-power SRAM based on 4-transistor latch cell is described. The memory cells are composed of two cross-coupled inverters without access transistors. The sources of PMOS transistors are connected to bitlines while the sources of NMOS transistors are connected to wordlines. They are accessed by totally new read and write method which results in low operating power dissipation in the nature. Moreover, the design reduces the leakage current in the memory cells. The proposed SRAM has been demonstrated through 16-kbit test chip fabricated in a 0.18-${\mu}m$ CMOS process. It shows 17.5 ns access at 1.8-V supply while consuming dynamic power of $87.6\;{\mu}W/MHz$ (for read cycle) and $70.2\;{\mu}W/MHz$ (for write cycle). Compared with those of the conventional 6-transistor SRAM, it exhibits the power reduction of 30 % (read) and 42 % (write) respectively. Silicon measurement also confirms that the proposed SRAM achieves nearly 64 % reduction in the total standby power dissipation. This novel SRAM might be effective in realizing low-power embedded memory in future mobile applications.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.3
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• pp.40-46
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• 2001

In this paper, a novel low power full adder circuit comprising only 10 transistors is proposed. The circuit is based on the six -transistor CMOS XOR circuit, which generates both XOR and XNOR signals and pass transistors. This adder circuit provides a good low power characteristics due to the smaller number of transistors and the elimination of short circuit current paths. Layouts have been carried out using a 0.65 ${\mu}m$ ASIC design rule for evaluation purposes. The physical design has been evaluated using HSPICE at 25MHz to 50MHz. The proposed circuit has been used to build 2bit and 8bit ripple carry adders, which are used for evaluation of power consumption, time delay and rise and fall time. The proposed circuit shows substantially improved power consumption characteristics, about 70% lower than transmission gate full adder (TFA), and 60% lower than a design using 14 transistors (TR14). Delay and signal rise and fall time are also far shorter than other conventional designs such as TFA and TR14.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.91-97
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• 2004

A digital over-sampling noise-shaping coder to achieve the processing accuracy for the audio signal bandwidth is designed. In order to implement an optimized design of the noise-shaping coder as a form of U (intellectual property), circuit design techniques that optimize the multiplication and the ROM architectures are proposed with emphasis on the low-voltage operation under 2.0 V and the minimization of the hardware resources. In the design and verification methodology, the overall architectures and the internal bit width have been determined through behavioral simulations. The overall performances including timing margin have been estimated through transistor-level simulations. Furthermore, the test results of the implemented chip using a 0.35-${\mu}{\textrm}{m}$ standard CMOS process proposed the validity of the proposed circuits and the design methodology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.309-315
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• 2010

A fully-differential low-voltage low-power electrocardiogram (ECG) amplifier by using the nonfeedback PMOS pseudo-resistors is proposed. It consists of two operational-transconductance amplifiers (OTA) in series (a preamplifier and a variable-gain amplifier). To make it insensitive to the gate leakage current of the OTA input transistor, the feedback pseudo-resistor of the conventional ECG amplifier is moved to input branch between the OP amp summing node and the DC reference voltage. Also, an OTA circuit with a Gm boosting block without reducing the output resistance (Ro) is proposed to maximize the OTA DC gain. The measurements shows the frequency bandwidth from 7 Hz to 480 Hz, the midband gain programmable from 48.7 dB to 59.5 dB, the total harmonic distortion (THD) less than 1.21% with a full voltage swing, and the power consumption of 233 nW in a 0.13 ${\mu}m$ CMOS process at the supply voltage of 0.7 V.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.155-165
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• 2001

By suggesting a mixed-mode transient simulation method utilizing a 2-dimensional device simulator, we have analyzed CDM ESD Phenomena in CMOS chips, which utilize NMOS transistors as ESD protection devices. By analyzing the simulation results, the mechanisms leading to device failures in CDM discharge and the differences in discharge characteristics with different polarities of stored charges have been explained in detail. The effects of changes in interconnection resistance values on the gate-oxide failure at input buffers, which is the most serious problem in CDM discharge, have been examined. Also improvements in discharge characteristics with addition of the NMOS transistor for input-buffer protection have been examined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.20-27
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• 2007

An analytic design guide was formulated for the design of 3-stage CMOS OP amp with the nested Gm-C(NGCC) frequency compensation. The proposed design guide generates straight-forwardly the design parameters such as the W/L ratio and current of each transistor from the given design specifications, such as, gain-bandwidth, phase margin, the ratio of compensation capacitance to load capacitance. The applications of this design guide to the two cases of 10pF and 100pF load capacitances, shows that the designed OP amp work with a reasonable performance in both cases, for the range of compensation capacitance from 10% to 100% of load capacitance.